VLIN2626-02G www.vishay.com vishay semiconductors rev. 1.1, 23-feb-16 1 document number: 85915 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low capacitance, single-line es d-protection diode in sod-323 marking (example only) xyz = type code (see table below) ? bar = pin 1 ? features ? for lin-bus applications ? small sod-323 package ? 1-line esd-protection ? working range: 26.5 v ? low leakage current i r < 0.05 a ? low load capacitance c d < 16 pf ? esd-protection acc. iec 61000-4-2 ? 30 kv contact discharge ? 30 kv air discharge ? esd capability according to aec-q101: ? human body model: class h3b: > 8 kv ? e3 - pins plated with tin (sn) ? aec-q101 qualified available ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 s od-323 22756 20503 1 2 xyz 1 ordering information part number (example) environmental and quality code packaging code ordering code (example) aec-q101 qualified r o hs-compliant + lead (p b )-free terminations tin plated 3k per 7" reel (8 mm tape) 15k/box = moq 10k per 13" reel (8 mm tape) 10k/box = moq standard green VLIN2626-02G - e - 3-08 - VLIN2626-02G-e3-08 VLIN2626-02G h e - 3-08 - VLIN2626-02Ghe3-08 VLIN2626-02G - e - 3 - -18 VLIN2626-02G-e3-18 VLIN2626-02G h e - 3 - -18 VLIN2626-02Ghe3-18 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VLIN2626-02G sod-323 262 4.30 mg ul 94 v-0 msl level 1 (according j-std-020) peak temperature max. 260 c absolute maximum ratings parameter test conditions symbol value unit peak pulse current t a = 25 c; acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 4a peak pulse power t a = 25 c; acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 200 w esd immunity contact discharge acc. ie c 61000-4-2; 10 pulses; t a = 25 c v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses; t a = 25 c 30 kv operating temperature junction temperature t j -55 to +150 c storage temperature t stg -55 to +150 c
VLIN2626-02G www.vishay.com vishay semiconductors rev. 1.1, 23-feb-16 2 document number: 85915 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 ? / 150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical reverse voltage v r vs. reverse current i r electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test conditions / re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse stand-off voltage max. reverse working voltage v rwm - - 26.5 v reverse voltage at i r = 0.05 a v r 26.5 - - v reverse current at v rwm = 26.5 v i r - - 0.05 a reverse breakdown voltage at i r = 1 ma v br 28 30 32 v reverse clamping voltage at i pp 1 a; t p = 8/20 s v c -3240v at i pp = i ppm = 4 a; t p = 8/20 s v c -3950v capacitance at v r = 0 v, f = 1 mhz c d - 13.5 16 pf 10 100 1000 10000 0 20 40 60 80 100 120 -10 0 10 20 30 40 50 60 70 80 90 100 axis title 1st line 2nd line 2nd line i esd (%) t (ns) 2nd line rise time = 0.7 ns to 1 ns 53 27 20557 10 100 1000 10000 0 20 40 60 80 100 010203040 axis title 1st line 2nd line 2nd line i ppm (%) t (s) 2nd line 20 s to 50 % 8 s to 100 % 20548 0 2 4 6 8 10 12 14 16 -30 -20 -10 0 10 20 30 2nd line c d (pf) v r (v) 2nd line f = 1 mhz 22807 10 100 1000 10000 0 5 10 15 20 25 30 35 0.01 0.1 1 10 100 1000 10 000 axis title 1st line 2nd line 2nd line v r (v) i r (a) 2nd line t j = 150 c 75 c 25 c -40 c 100 c 22808
VLIN2626-02G www.vishay.com vishay semiconductors rev. 1.1, 23-feb-16 3 document number: 85915 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 6 - typical clamping voltage v c-tlp vs. pulse current i tlp package dimensions in millimeters (inches) sod-323 0 5 10 15 20 25 30 35 40 45 012345 2nd line v c (v) i pp (a) 2nd line measured according iec 61000-4-5 (8/20 s - wave form) 22809 10 100 1000 10000 0 20 40 60 0 102030405060 axis title 1st line 2nd line 2nd line v c- tlp (v) i tlp (a) 2nd line transmission line pulse (tlp): t p = 100 ns 22810 foot print recommendation: rev. 5 - date: 23. s ept.2009 22771 document no.: s 8-v-3910.02-001 (4) 0.6 [0.024] 0.6 [0.024] 0.6 [0.024] 1.6 [0.063] 0.10 [0.004] cathode bar 0.20 [0.008] 0.40 [0.016] 2.50 [0.098] 1.1 [0.043] 1.5 [0.059] 2.85 [0.112] 1.60 [0.063] 1.95 [0.077] 0.15 [0.006] 0.1 [0.004] max. 1.15 [0.045] 0.8 [0.031] created - date: 24.augu s t.2004 0.40 [0.016] 0.25 [0.010] 0.2 [0.008] 0 - 8
VLIN2626-02G www.vishay.com vishay semiconductors rev. 1.1, 23-feb-16 4 document number: 85915 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 carrier tape sod-323 orientation in carrier tape sod-323 document no.: s 8-v-3717.07-002 (4) created - date: 09. feb. 2010 22824 a a-a s ection a 4 0.1 2 0.05 1.75 0.1 0.254 0.013 ? 1 +0.25 0.00 4 0.1 b b 3.5 0.05 8 +0.3 -0.1 b-b s ection 2.9 0.1 1.35 0.1 1.52 0.1 ? 1.5 +0.1 0.0 top view catho d e unreelin g d irection document no.: s 8-v-3717.07-003 (4) created - date: 09. feb. 2010 22772
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