an itw company from deep uv to mid-ir revision july 13 , 2018 page 1 of 4 high - power gaalas ir emitters o d - 850w features high optical output 850 nm peak emission hermetically sealed to - 46 package wide emission angle to cover a large area parameters test conditions min typ max units total power output, p o i f = 100 ma 30 40 mw peak emission wavelength, p i f = 2 0 ma 850 nm spectral bandwidth at 50 %, ? i f = 2 0 ma 4 0 nm half intensity beam angle, i f = 2 0 ma 70 8 0 deg forward voltage, v f i f = 100 ma 1. 6 2 v olts reverse breakdown voltage, v r i r = 10 a 5 30 v olts rise time i f p = 50 ma 20 nsec fall time i f p = 50 ma 20 nsec parameters units power dissipation 200 m w continuo us forward current 10 0 ma peak forward current (10 s, 200 hz) 1 3 00 m a reverse voltage 5 v olts lead soldering temperature (1/16" from case for 10 sec) 26 0 c parameters units storage and operating temperature range - 40 c to 1 0 0 c maximum junction temperature 1 0 0 c thermal resistance, r thja 1 400 c /w typical thermal resistance, r thja 2 135 c /w typical electro - optical characteristics at 25 c absolute maximum ratings at 25c thermal parameters 1 heat transfer minimized by measuring in still air with minimum heat conducting through leads . 2 air circulating at a rapid rate to keep case temperature at 25 c . 1 derate linearly above 25 c.
an itw company from deep uv to mid-ir revision july 13 , 2018 page 2 of 4 high - power gaalas ir emitters o d - 850w ambient temperature (?c) ifinite heat sink no heat sink 0 200 400 600 800 1000 1200 25 50 75 100 power dissapation (mw) 50 60 70 80 90 100 relative power output (%) stress time, (hrs) 10 1 10 2 10 3 10 4 10 5 t case = 25 ? no pre burn-in performed i f = 20 ma i f = 50 ma i f = 100 ma i f = 100 ma (-3 ) -100 -80 -60 -40 -20 0 20 40 60 80 100 0 20 40 60 80 100 beam angle (deg) relative power outout (%) maximum rated thermal derating curve typical degradation curve typical radiation pattern
an itw company from deep uv to mid-ir revision july 13 , 2018 page 3 of 4 high - power gaalas ir emitters o d - 850w relative power output -50 -25 0 25 50 75 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 ambient temperature (?) wavelength (nm) 0 20 40 60 80 100 750 800 850 900 950 relative power output (%) 10 100 1 10 100 relative power outout, p o (mw) dc forward current, i f (ma) typical power output vs temperature typical spectral output typical power output vs forward current
an itw company from deep uv to mid-ir revision july 13 , 2018 page 4 of 4 high - power gaalas ir emitters o d - 850w all surfaces are gold plated. dimensions are nominal values in inc hes unless otherwise specified. window caps are welded to the case. package information ordering information 1260 calle suerte, camarillo, california 93012 phone: +1 805.499.03 3 5 | fax: +1 805.499.8108 | sales@optodiode.com | www. optodiode.com o d - 850 - 002 wide angle to - 46 850 nm emitter shipped in esd bag specifications are subject to change without prior notice.
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