data sheet semiconductor http://www.yeashin.com 1 rev.02 20120703 2SC3356 description the 2s c 3356 is an n p n silicon epitaxial transistor designed for low noise amplifier at vhf, uhf and catv band. it has dynamic range and good current characteristic. features ? low noise and high gain nf = 1.1 db typ., g a = 11 db typ. @v ce = 10 v, i c = 7 ma, f = 1.0 ghz ? high power gain mag = 13 db typ. @v ce = 10 v, i c = 20 ma, f = 1.0 ghz absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current i c 100 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperatur e t st g 55 to +15 0 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1.0 v, i c = 0 dc current gai n h f e 82 170 270 v ce = 10 v, i c = 20 ma gain bandwidth product f t 7 ghz v ce = 10 v, i c = 20 ma feed-back capacitance c re ** 0.55 1.0 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21 e 2 11.5 db v ce = 10 v, i c = 20 ma, f = 1.0 ghz noise figure nf 1.1 2.0 db v ce = 10 v, i c = 7 ma, f = 1.0 ghz * pulse measurement pw 350 s, duty cycle 2 % ** the emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. marking 2SC3356 r24 sot?23 (to?236ab) 1 2 3 h
http://www.yeashin.com 2 rev.02 20120703 2SC3356 device characteristics typical characteristics (t a = 25 c) total power dissipation vs. ambient temperature 200 100 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-mw h fe -dc current gain v ce = 10 v 0 5 10 15 0.5 1 5 10 50 70 i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db v ce = 10 v f = 1.0 ghz 0.3 0.5 1 2 0 0.5 1 2 5 10 20 30 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 mhz 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0 0.5 1.0 105.0 30 i c -collector current-ma gain bandwidth product vs. collector current f t -gain bandwidth product-mhz v ce = 10 v 0 10 20 0.1 0.2 0.4 0.6 0.81.0 2 f-frequency-ghz insertion gain, maximum gain vs. frequency g max -maximum gain-db |s 21e | 2 -insertion gain-db v ce = 10 v i c = 20 ma g max |s 21e | 2 free air
http://www.yeashin.com 3 rev.02 20120703 2SC3356 device characteristics 0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 10 v f = 1.0 ghz 5 4 3 2 1 0 18 15 12 6 3 0 246810 v ce -collector to emitter voltage-v noise figure, forward insertion gain vs. collector to emitter voltage nf-noise figure-db |s 21e | 2 -insertion gain-db f = 1.0 ghz i c = 20 ma |s 21e | 2 nf
http://www.yeashin.com 4 rev.02 20120703 2SC3356 package outline & dimensions d j k l a c b s h g v 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 n o t e s : 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. i nch es m i ll i m e t e r s d i m m i n m a x m i n m a x a 0 . 1 102 0 . 1 197 2 . 80 3 . 04 b 0 . 0 472 0 . 0 551 1 . 20 1 . 40 c 0 . 0 350 0 . 0 440 0 . 89 1 . 11 d 0 . 0 150 0 . 0 200 0 . 37 0 . 50 g 0 . 0 701 0 . 0 807 1 . 78 2 . 04 h 0 . 0 005 0 . 0 040 0 . 013 0 . 100 j 0 . 0 034 0 . 0 070 0 . 085 0 . 177 k 0 . 0 1 4 0 0 . 0 2 85 0 . 35 0 . 6 9 l 0 . 0 350 0 . 0 401 0 . 89 1 . 02 s 0 . 0 830 0 . 1 039 2 . 10 2 . 64 v 0 . 0 177 0 . 0 236 0 . 45 0 . 60 p i n 1 . base 2 . e m i tt e r 3 . c o l l e c t o r 0.03 1 0. 8 sot-23 3
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