dm p3008sfg document number: d s 35598 rev. 6 - 3 1 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information 30v p - channel enhancement mode mosfet p ower di 3333 - 8 product summary b v dss r ds(on) max i d max t a = + 25c - 3 0v 17m ? @ v gs = - 10 v - 8.6a 25 m ? @ v gs = - 4 .5v - 7.1a description and applications this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully r ohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe . solderable per mil - std - 202, method 208 ? weight: 0.008 grams ( approximate ) ordering information (note 4 ) part number case packaging dm p 30 08 s fg - 7 p ower di3333 - 8 20 00 /tape & reel dm p 30 08 s fg - 13 p ower di3333 - 8 3000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and ant imony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information bottom view internal sch e m a tic top view s 31 = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 7 = 201 7 ) ww = week code (01 to 53) p ower di3333 - 8 powerdi is a registered trademark of diodes incorporated. not recommended for new design use dmp3036sfv s s s g d d d d pin 1 source gate drain s31 y y w w
dm p3008sfg document number: d s 35598 rev. 6 - 3 2 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss - 3 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 8.6 - 7.0 a t<10s t a = + 25c t a = + 70c i d - 11.7 - 9.3 a continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = + 25c t a = + 70c i d - 7.1 - 5.6 a t<10s t a = + 25c t a = + 70c i d - 9.6 - 7.6 a pulsed drain curren t ( 10 dm - 80 a maximum continuous body diode f orward current (note 6 ) i s - 3.0 a thermal characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit total power dissipation (note 5 ) p d 0.9 w thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 140 c/w t<10s 72 c/w total power dissipation (note 6 ) p d 2. 2 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 57 c/w t<10s 30 c/w thermal resistance, junction to case (note 6 ) r ? j c 7.1 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 0.1 1 10 100 - v , drain - source voltage (v) fig. 1 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d r limited ds( on ) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 w s t = 150c t = 25c single pulse j( max ) a - i d , drain current (a) not recommended for new design use dmp3036sfv 0 10 20 30 40 50 60 70 80 90 100 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 single pulse r = 57 c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja j a ja(t) ? p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k )
dm p3008sfg document number: d s 35598 rev. 6 - 3 3 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information electrical characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 3 0 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ? a v ds = - 30 v, v gs = 0v gate - source leakage i gss ? ? ? gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 1.1 - 1.6 - 2.1 v v ds = v gs , i d = - 250 ? ds (on) ? ? ? gs = - 10 v, i d = - 10 a ? gs = - 4 .5v, i d = - 10 a forward transfer admittance |y fs | ? ? ds = - 15 v, i d = - 10 a diode forward voltage v sd ? gs = 0v, i s = - 1a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = - 15 v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 10 v ) q g ? ? ? ds = - 15 v, i d = - 10 a total gate charge ( v gs = - 4.5 v ) q g ? ? ? ? gs ? ? gd ? ? d( on ) ? ? gs = - 10 v, v d s = - 15v, r g = 6 ? r ? ? d( off ) ? ? f ? ? ? ? notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing. 57 c /w not recommended for new design use dmp3036sfv 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 r (t) = r(t) * r ?? ja ja r = 57 C /w duty cycle, d = t1/ t2 ? ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dm p3008sfg document number: d s 35598 rev. 6 - 3 4 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information not recommended for new design use dmp3036sfv r ds(on) , drain - source on - resistance ( ? 0 0.5 1.0 1.5 2.0 -v , drain -source voltage(v) fig. 4 typical output characteristics ds 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs v = 2.5v gs 1 2 3 4 -v , gate-source voltage (v) gs fig. 5 typical transfer characteristics 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 -i , drain source current fig. 6 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 -i , drain source current (a) fig. 7 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 8 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 9 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -10v i = a gs d -10 v = 5v i = a gs d -4. -5
dm p3008sfg document number: d s 35598 rev. 6 - 3 5 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information 0 5 10 15 20 25 30 - v , drain - source voltage (v) fig. 13 typical drain - source leakage current vs. voltage ds 1 10 100 1,000 10,000 - i , l e a k a g e c u r r e n t ( n a ) d s s t = 150c a t = 125c a t = 85c a t = 25c a - i d ss , leakage current ( ? not recommended for new design use dmp3036sfv - 0 0.5 1.0 1.5 2.0 2.5 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) -50 -25 0 25 50 75 100 125 150 t , ambient temperature ( C ) fig. 10 gate threshold variation vs. ambient temperature a 0 2 4 6 8 10 12 14 16 18 20 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 11 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 -v , drain-source voltage (v) fig. 12 typical junction capacitance ds 100 1,000 10,000 c , j u n c t i o n c a p a c i t a n c e ( p f ) t c oss c rss f = 1mhz c iss 0 10 20 30 40 50 60 q , total gate charge (nc) fig. 14 gate-charge characteristics g 0 2 4 6 8 10 - v , g a t e - s o u r c e v o l t a g e ( v ) g s
dm p3008sfg document number: d s 35598 rev. 6 - 3 6 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi3333 - 8 powerdi3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e3 0.79 0.89 0.84 e4 1.60 1.70 1.65 e ? ? ? ? 0.65 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 y4 0.540 not recommended for new design use dmp3036sfv d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) 1 8 e3 e4 x3 y3 x y c y1 y2 x1 x2 1 8 y4
dm p3008sfg document number: d s 35598 rev. 6 - 3 7 of 7 www.diodes.com october 2017 ? diodes incorporated d mp3008sfg advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreig n trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorpora ted products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incor porated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes inco rporated www.diodes.com not recommended for new design use dmp3036sfv
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