AON2392 general description product summary v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) < 32m? r ds(on) (at v gs =4.5v) < 39m? applications ? home automation and iot ? voip applications dfn2x2c tape & reel AON2392 3000 100v n-channel alphasgt tm orderable part number package type form minimum order quantity 100v ? trench power alphasgt tm technology ? low r ds(on) ? logic driven ? rohs and halogen-free compliant dfn 2x2c top view bottom view pin 1 pin 1 g d s g ds symbol v ds v gs i dm t j , t stg symbol t 10s steady-state power dissipation b 2.6 t a =70c p d 100 4.1 gate-source voltage pulsed drain current c 6 parameter drain-source voltage continuous drain current dfn2x2c tape & reel c/w maximum junction-to-ambient a d 55 va absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units AON2392 3000 maximum junction-to-ambient a c/w r q ja 25 45 30 parameter max c units junction and storage temperature range -55 to 150 typ t a =25c t a =70c t a =25c thermal characteristics w i d 32 8 rev.1.0: january 2016 www.aosmd.com page 1 of 5
AON2392 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.85 2.4 v 26 32 t j =125c 46 57 31 39 m? g fs 25 s v sd 0.74 1 v i s 5 a c iss 840 pf c oss 64 pf c rss 4 pf r g 1.4 ? q g (10v) 12.8 25 nc q g (4.5v) 6.1 12 nc q gs 2.1 nc q gd 1.8 nc q oss output charge v gs =0v, v ds =50v 11 nc t d(on) 7 ns t r 8 ns t d(off) 24 ns reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =8a v gs =10v, i d =8a v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current turn-off delaytime v gs =10v, v ds =50v, r l =5.85 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =6a turn-on rise time gate source charge gate drain charge total gate charge switching parameters turn-on delaytime m? v gs =10v, v ds =50v, i d =8a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance t d(off) 24 ns t f 3 ns t rr 20 ns q rr 70 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge body diode reverse recovery time i f =8a, di/dt=500a/ m s turn-off delaytime turn-off fall time r gen =3 w i f =8a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev.1.0: january 2016 www.aosmd.com page 2 of 5
AON2392 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 20 30 40 50 0 3 6 9 12 15 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =6a v gs =10v i d =8a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 35 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =2.5v 3v 4v 10v 3.5v 6v 4.5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 20 40 60 80 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c rev.1.0: january 2016 www.aosmd.com page 3 of 5
AON2392 typical electrical and thermal characteristics 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =50v i d =8a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 4.5v 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) r q ja =55 c/w rev.1.0: january 2016 www.aosmd.com page 4 of 5
AON2392 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr figure d: diode recovery test circuit & waveforms rev.1.0: january 2016 www.aosmd.com page 5 of 5
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