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this is information on a product in full production. september 2013 docid024639 rev 3 1/19 19 STD5N95K5, stf5n95k5, stp5n95k5 n-channel 950 v, 2 typ., 3.5 a zener-protected supermesh? 5 power mosfets in dpak, to-220fp and to-220 packages datasheet ? production data figure 1. internal schematic diagram features ? to-220 worldwide best r ds(on) ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfets are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. '7$% * 6 am01476v1 to-220 to-220fp 1 2 3 1 2 3 tab 1 3 tab dpak order codes v ds r ds(on) max i d p tot STD5N95K5 950 v 2.5 3.5 a 70 w stf5n95k5 25 w stp5n95k5 70 w table 1. device summary order codes marking package packaging STD5N95K5 5n95k5 dpak tape and reel stf5n95k5 to-220fp tube stp5n95k5 to-220 www.st.com
contents STD5N95K5, stf5n95k5, stp5n95k5 2/19 docid024639 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024639 rev 3 3/19 STD5N95K5, stf5n95k5, stp5n95k5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, to-220 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3.5 3.5 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 2.2 2.2 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 14 a p tot total dissipation at t c = 25 c 70 25 w i ar max current during repetitive or single pulse avalanche 1a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 70 mj dv/dt (3) 3. i sd 3.5 a, di/dt 100 a/ s, v dspeak v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v sd 640 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit dpak, to-220 to-220fp r thj-case thermal resistance junction-case max 1.47 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STD5N95K5, stf5n95k5, stp5n95k5 4/19 docid024639 rev 3 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current v ds = 950 v, v gs = 0 v ds = 950 v, v gs = 0, t c =125 c 1 50 a a i gss gate-body leakage current v gs = 20 v; v ds =0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.5 a 2 2.5 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -220- pf c oss output capacitance - 17 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v -30-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -11-pf r g intrinsic gate resistance f = 1 mhz open drain - 17 - q g total gate charge v dd = 760 v, i d = 3.5 a v gs =10 v (see figure 19 ) - 12.5 - nc q gs gate-source charge - 2 - nc q gd gate-drain charge - 10 - nc
docid024639 rev 3 5/19 STD5N95K5, stf5n95k5, stp5n95k5 electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 475 v, i d = 1.75 a, r g = 4.7 , v gs = 10 v (see figure 18) -12 -ns t r rise time - 16 - ns t d(off) turn-off-delay time - 32 - ns t f fall time - 25 - ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 3.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 14 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 3.5 a, di/dt = 100 a/ s v dd = 60 v (see figure 20) - 330 ns q rr reverse recovery charge - 2.2 c i rrm reverse recovery current - 13 a t rr reverse recovery time i sd = 3.5 a, di/dt = 100 a/ s v dd = 60 v t j = 150 c (see figure 20) - 525 ns q rr reverse recovery charge - 3.2 c i rrm reverse recovery current - 12 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics STD5N95K5, stf5n95k5, stp5n95k5 6/19 docid024639 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am16093v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am16094v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am16095v1
docid024639 rev 3 7/19 STD5N95K5, stf5n95k5, stp5n95k5 electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 3 2 1 05 15 v ds (v) 10 (a) 6v 0 7v 8v 9v v gs = 11v 20 4 5 6 7 10v gipd170920131400fsr i d 3 2 1 56 8 v gs (v) 7 (a) 0 v ds = 20v 9 4 5 6 10 gipd170920131419fsr v gs 6 4 2 02 6 q g (nc) 4 (v) 0 8 8 10 12 10 12 v ds (v) 0 100 200 300 400 500 600 700 v dd = 760 v i d = 3.5 a gipd170920131429fsr r ds(on) 1.5 1 0.5 0.5 1 2 i d (a) 1.5 () 0 2.5 2 2.5 3 v gs = 10v 3.5 4 gipd170920131442fsr c 100 10 1 0.1 1 100 v ds (v) 10 (pf) 0.1 1000 c iss c oss c rss gipd170920131458fsr e oss 4 2 0 600 400 v ds (v) 200 (j) 0 800 gipd170920131505fsr
electrical characteristics STD5N95K5, stf5n95k5, stp5n95k5 8/19 docid024639 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v (br)dss vs temperature figure 17. source-drain diode forward characteristics v gs(th) 0.6 0.5 -100 50 0t j (c) -50 (norm) 0.4 100 150 0.7 0.8 0.9 1 1.1 1.2 i d = 100a gipd170920131531fsr r ds(on) 1 0.5 -100 50 0t j (c) -50 (norm) 0 100 150 1.5 2 2.5 i d = 1.5a v gs = 10v gipd170920131536fsr v (br)dss 0.95 0.9 -100 50 0t j (c) -50 (norm) 0.85 100 150 1 1.05 1.1 i d = 1ma gipd170920131545fsr v sd 0.7 0.6 02.4 1.6 i sd (a) 0.8 (v) 0.5 3.2 0.8 0.9 t j = -50c t j = 25c t j = 150c gipd240920131326fsr
docid024639 rev 3 9/19 STD5N95K5, stf5n95k5, stp5n95k5 test circuits 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STD5N95K5, stf5n95k5, stp5n95k5 10/19 docid024639 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024639 rev 3 11/19 STD5N95K5, stf5n95k5, stp5n95k5 package mechanical data table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STD5N95K5, stf5n95k5, stp5n95k5 12/19 docid024639 rev 3 figure 24. dpak (to-252) type a drawing 0068772_l_type_a
docid024639 rev 3 13/19 STD5N95K5, stf5n95k5, stp5n95k5 package mechanical data figure 25. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_l
package mechanical data STD5N95K5, stf5n95k5, stp5n95k5 14/19 docid024639 rev 3 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024639 rev 3 15/19 STD5N95K5, stf5n95k5, stp5n95k5 package mechanical data figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data STD5N95K5, stf5n95k5, stp5n95k5 16/19 docid024639 rev 3 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024639 rev 3 17/19 STD5N95K5, stf5n95k5, stp5n95k5 package mechanical data figure 27. to-220 type a drawing bw\sh$b5hyb7
revision history STD5N95K5, stf5n95k5, stp5n95k5 18/19 docid024639 rev 3 5 revision history table 12. document revision history date revision changes 08-may-2013 1 first release. 18-sep-2013 2 document status promoted from preliminary to production data. added section 2.1: electrical characteristics (curves) . updated dpak mechanical data. 25-sep-2013 3 inserted figure 17: source-drain diode forward characteristics .
docid024639 rev 3 19/19 STD5N95K5, stf5n95k5, stp5n95k5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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