hpnd- 4005 beam lead pin diode data sheet description the HPND-4005 planar beam lead pin diode is constructed to ofer exceptional lead strength while achieving excellent ele c tr i cal performance at high frequencies. high beam strength ofers users superior assembly yield, while extremely low capacitance allows high isola tion to be realized. nitride passivation and pol y imide coating provide reliable device protection. applications the HPND-4005 beam lead pin diode is designed for use in stripline or microstrip circuits. applications include switching, attenuating, phase shifting, limiting, and modulating at microwave fr e quencies. the extremely low capac i tance of the HPND-4005 makes it ideal for circuits requiring high isolation in a series diode confg - uration. maximum ratings operating temperature -65c to +175c storage temperature -65c to +200c power dissipation at tcase = 25c (derate linearly to zero at 175c.) 250 mw minimum lead strength 4 grams pull on either lead diode mounting temp 220c for 10 sec. max. outline 21 features ? high breakdown voltage: 120 v typical ? low capacitance: 0.017 pf typical ? low resistance: 4.7 w typical ? rugged construction: 4 grams minimum lead pull ? nitride passivated 130 (5.1 ) 110 (4.3 ) 130 (5.1 ) 110 (4.3 ) gold leads cathode s 1 o 2 /s i 3 n 4 passivation 110 (4.3) 80 (3.1) silicon glass 25 min (1.0) 760 (29.9 ) 640 (25.2 ) 220 (8.7) 180 (7.1) dimensions in m (1/1000 inch ) 8 (0.3) min . 320 (12.6 ) 280 (11.0 ) 220 (8.7) 180 (7.1) 60 (2.4) 30 (1.2)
electrical specifcations at t a = 25c part number breakdown voltage v br (v) series resistance r s (?) [2] capacitance c t (pf) [1,2] forward voltage v f (v) reverse current i r (na) minority carrier lifetime (ns) [2] hpnd- min. typ. typ. max. typ. max. max. max. min. typ. 4005 100 120 4.7 6.5 0.017 0.02 1.0 100 50 100 test conditions i r = 10 m a i f = 20 ma i f = 100 mhz v r = 10 v f = 10 ghz i f = 20 ma v r = 30 v i f = 10 ma i r = 6 ma notes: 1. total capacitance calculated from measured isolation value in a series confguration. . test performed on packaged samples. typical parameters i f - forward bias current (ma) figure 2. typical rf resistance vs. forward bias current. 10,000 1000 100 10 1 rf resistance (ohms) 0.01 0.1 1 1 0 100 frequency (ghz) figure 3. typical isolation and insertion loss in the series configuration (z o = 50 ?) . 40 30 20 10 0 1 isolation (db) insertion loss (db) 1 1 0 1 8 isolation at: - 3 0 v - 1 0 v insertion loss at: 10 ma 20 ma 50 ma 100 10 1 0.1 0.01 0.25 0.50 0.75 1.00 1.25 i f - forward current (ma) v f - forward voltage (v) figure 1. typical forward conduction characteristics . 0.08 0.06 0.04 0.02 0 0 1 0 2 0 3 0 capacitance (pf) reverse voltage (v) figure 4. typical capacitance at 10 ghz vs. reverse bias .
bonding and handling procedures for beam lead diodes 1. storage under normal circumstances, storage of beam lead diodes in avago-supplied wafe/gel packs is sufcient. in particularly dusty or chemically hazardous environ - ments, storage in an inert atmosphere desiccator is advised. 2. handling in order to avoid damage to beam lead devices, par - ticular care must be exercised during inspection, testing, and assembly. although the beam lead diode is designed to have exceptional lead strength, its small size and delicate nature requires that special handling techniques be observed so that the devices will not be mechanically or electrically damaged. a vacuum pickup is recommended for picking up beam lead devices, par - ticularly larger ones, e.g., quads. care must be exercised to assure that the vacuum opening of the needle is suf - fciently small to avoid passage of the device through the opening. a # 7 tip is recommended for picking up single beam lead devices. a 0x magnifcation is needed for precise positioning of the tip on the device. where a vacuum pickup is not used, a sharpened wooden q-tip dipped in isopropyl alcohol is very commonly used to handle beam lead devices. 3. cleaning for organic contamination use a warm rinse of trichlo - roethane, or its locally approved equivalent, followed by a cold rinse in acetone and methanol. dry under infrared heat lamp for 5C10 minutes on clean flter paper. freon degreaser, or its locally approved equivalent, may replace trichloroethane for light organic contamination. ? ultrasonic cleaning is not recommended. ? acid solvents should not be used. 4. bonding thermocompression: see application note 979 the handling and bonding of beam lead devices made easy. this method is good for hard substrates only. wobble: this method picks up the device, places it on the substrate and forms a thermo-compression bond all in one operation. this is described in the latest version of mil-std-883, method 017, and is intended for hard substrates only. resistance welding or parallel-gap welding: to make welding on soft substrates easier, a low pressure welding head is recommended. suitable equipment is available from hughes, industrial products division in carlsbad, ca. epoxy: with solvent free, low resistivity epoxies (available from ablestik and improvements in dispens - ing equipment, the quality of epoxy bonds is sufcient for many applications. 5. lead stress in the process of bonding a beam lead diode, a certain amount of bugging occurs. the term bugging refers to the chip lifting away from the substrate during the bonding process due to the deformation of the beam by the bonding tool. this efect is benefcial as it provides stress relief for the diode during thermal cycling of the substrate. the coefcient of expansion of some substrate materials, specifcally soft substrates, is such that some bugging is essential if the circuit is to be operated over wide temperature extremes. thick metal clad ground planes restrict the thermal expansion of the dielectric substrates in the x-y axis. the expansion of the dielectric will then be mainly in the z axis, which does not afect the beam lead device. an alternate solution to the problem of dielec - tric ground plane expansion is to heat the substrate to the maximum required operating temperature during the beam lead attachment. thus, the substrate is at maximum expansion when the device is bonded. sub - sequent cooling of the substrate will cause bugging, similar to bugging in thermocompression bonding or epoxy bonding. other methods of bugging are pre - forming the leads during assembly or prestressing the substrate.
4 for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 2006 avago technologies, limited. all rights reserved. obsoletes 5965-8877e av01-0593en - october 12, 2006
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