king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 1 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. - table of contents - 1. general description_______________________________________________________________2 2. features ________________________________________________________________________2 3. functional block diagram __________________________________________________________2 4. pin description __________________________________________________________________3 5. pad location ____________________________________________________________________5 6. absolute maximum rating _________________________________________________________6 7. ac electrical characteristics _______________________________________________________6 8. dc electrical characteristics _______________________________________________________7
king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 2 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. 1. general description the SF23C3200B is a fully static, 32 mbit cmos mask programmable rom. this device operates in wide operating range. it requires no external cl ock for its operation and suitable for use with microprocessor program memory, and data memory (speech, graphic, etc). 2. features 9 operating range: 2.4v ~ 3.6v 9 organization - memory cell array: 4m x 8 or 2m x 16 selectable by byteb pin 9 low operation current (typical) - 10 a standby mode current. - 30 ma active read current at 100 ns cycle time. 9 fully static operation 9 tri-state outputs 9 package: bare chip 3. functional block diagram memory cell array sense amp. oen x buffer & decoder control logic y buffer & decoder cen [a20..a-1] [q15..q0] byteb
king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 3 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. 4. pin description sf23c3200 10 9 8 7 6 5 4 3 41 40 39 38 37 36 35 34 33 11 13 32 14 16 18 20 23 25 27 29 22 12 2 1 42 15 17 19 21 24 26 28 30 31 43 a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 a13 a14 a15 a16 ce oe by te q0 q1 q2 q3 q4 q5 q6 q7 vcc gnd a17 a18 a19 q8 q9 q10 q11 q12 q13 q14 q15/a-1 gnd a20 symbol pin no. i/o description a18, a17 1, 2 i mask rom address input pins. a7 ~ a0 3 ~ 10 i mask rom address input pins. cen 11 i the cen (chip enable) input is the device selection and power control for internal mask rom array. whenever cen goes high, the internal mask rom will enter standby (power saving) mode. otherwise, it is in active mode and the contents of the rom can be accessed. gnd 12 p negative power supply input pin. oen 13 i oen (output enable) is the output control which gates rom array data onto the data output pins q7 ~ q0 in byte mode (byteb pin is at ?low? state) or q15a-1, q14 ~ q0 in word mode (b yteb pin is at ?high? state). q0, q1, q2, q3, q4, q5, q6, q7, 14, 16, 18, 20, 23, 25, 27, 29 o, o, o, o, o, o, o, o, mask rom array data lower byte output s drive q7 ~ q0 pins during read operations (cen and oen are ?low?). th e q7 ~ q0 pins stay in high-z when the chip is deselected (cen high) or when the outputs ar e disabled (oen high). q8, q9, q10, q11, q12, q13, q14, q15a-1, 15, 17, 19, 21, 24, 26, 28, 30 o, o, o, o, o, o, o, o/i, mask rom data higher byte output pi ns when word mode is selected (byteb is at ?high? level) durin g read operations (cen and oen are ?low?). they will be tri-stated when byte mode is selected (byteb at ?low? level), the chip is deselected (cen high), the outputs are disabled (oen high). q15a-1 is mask rom msb data out put pin in word mode and lsb address pin in byte mode. vcc 22 p positive power supply input pin.
king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 4 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. gnd 31 p negative power supply input pin. byteb 32 i byte/word mode selection input pi n. byte mode is selected when it is at ?low? state, otherwise word mode is selected. a16 ~ a8 33 ~ 41 i mask rom address input pins. a19, a20 42, 43 i mask rom address input pins.
king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 5 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. 5. pad location
king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 6 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. pad no. pad name x coord. y coord. pad no. pad name x coord. y coord. 1 nc -1941.5 3231.86 31 gnd 1941.5 -3262.78 2 byteb -1941.5 3008.86 32 gnd 1941.5 -3039.78 3 a16 -1941.5 2785.86 33 gnd 1941.5 -2816.78 4 a15 -1941.5 2562.86 34 oen 1941.5 -2593.78 5 a14 -1941.5 2339.86 35 d0 1941.5 -2370.78 6 a13 -1941.5 2116.86 36 d8 1941.5 -2140.78 7 a12 -1941.5 1893.86 37 d1 1941.5 -1917.78 8 a11 -1941.5 1670.86 38 d9 1941.5 -1687.78 9 a10 -1941.5 1447.86 39 d2 1941.5 -1464.78 10 a9 -1941.5 1224.86 40 d10 1941.5 -1234.78 11 a8 -1941.5 1001.86 41 d3 1941.5 -1011.78 12 a19 -1941.5 778.86 42 d11 1941.5 -781.78 13 gnd -1941.5 555.86 43 vdd 1941.5 -558.78 14 nc -1941.5 332.86 44 gnd 1941.5 -335.78 15 gnd -1941.5 -34.78 45 vdd 1941.5 -112.78 16 nc -1941.5 -257.78 46 gnd 1941.5 110.22 17 gnd -1941.5 -480.78 47 vdd 1941.5 333.22 18 a20 -1941.5 -703.78 48 gnd 1941.5 712.16 19 a18 -1941.5 -926.78 49 d4 1941.5 935.16 20 a17 -1941.5 -1149.78 50 d12 1941.5 1165.16 21 a7 -1941.5 -1372.78 51 d5 1941.5 1388.16 22 a6 -1941.5 -1595.78 52 d13 1941.5 1618.16 23 a5 -1941.5 -1818.78 53 d6 1941.5 1841.16 24 a4 -1941.5 -2041.78 54 d14 1941.5 2071.16 25 a3 -1941.5 -2264.78 55 d7 1941.5 2294.16 26 a2 -1941.5 -2487.78 56 d15a_1 1941.5 2517.16 27 a1 -1941.5 -2710.78 57 gnd 1941.5 2740.16 28 a0 -1941.5 -2931.48 58 gnd 1941.5 2963.16 29 cen -1941.5 -3152.18 59 gnd 1941.5 3186.16 30 nc -1941.5 -3372.88 6. absolute maximum rating items symbol rating supply voltage v cc 2.4 to 3.6 v input voltage v in -0.3 to vdd+0.3 v operating temperature t opr -0 to 70 c storage temperature t str -55 to 125 c 7. ac electrical characteristics read cycle:
king billion electronics co., ltd E | ? SF23C3200B december 8, 2003 page 7 of 7 v1.1 this specification is subject to change without notice. please contact sales person for the latest version before use. there are two ways of accessing the ro m data. the first one is to assert the valid addre ss on the address bus, then assert cen ?low? to enable the rom arra y. the access time in this mode is specified as t ace . the advantage of this access mode is that power consumption can be lowered. the second access mode keeps the cen ?low? while changes the addresses to access the contents of ro m data. the access time in this way is specified as t aa . item symbol min max unit condition 100 v dd = 3.0 v, no load read cycle time t rc 120 ns v dd = 2.4v, no load 100 v dd = 3.0 v, no load chip enable access time t ace 120 ns v dd = 2.4v, no load 100 v dd = 3.0 v, no load address access time t aa 120 ns v dd = 2.4v, no load output enable time t oe 50 ns output or chip disable to output high-z t df 20 ns output hold from address change t oh 0 ns 8. dc electrical characteristics (gnd = 0v, v cc = 3.0 v, t opr = 25 c unless otherwise noted) parameter symbol min. typical max. unit condition supply voltage v cc 2.4 - 3.6 v operating current i cc - 30 - ma no load, t rc @ 100 ns standby current i stby - 10 - a no load v ih 2/3 - 1 input voltage v il 0 - 1/3 v dd v dd = 2.4v ~ 3.6v input current leakage i il - - 10 a p0, p1 output high voltage v oh 2.4 - - v i oh = 0.4 ma p0, p1 output low voltage v ol - - 0.4 v i ol = 2.1 ma d output high voltage v oh 2.4 - - v i oh = 1.4 ma d output low voltage v ol - - 0.4 v i ol = 3 ma
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