? 2014 ixys corporation, all rights reserved xpt tm 600v igbt genx3 tm IXXQ30N60B3M v ces = 600v i c110 = 19a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 1.85v t fi(typ) = 125ns ds100591(01/14) extreme light punch through igbt for 5-30 khz switching features ? plastic overmolded tab for electrical isolation ? optimized for 5-30khz switching ? square rbsoa ? avalanche capability ? short circuit capability advantages ? high power density ? 175c rated ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 600 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 250 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 24a, v ge = 15v, note 1 1.66 1.85 v t j = 150 ? c 1.97 v advance technical information symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 33 a i c110 t c = 110c 19 a i cm t c = 25c, 1ms 140 a i a t c = 25c 20 a e as t c = 25c 250 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 48 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 90 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 5g (electrically isolated tab) overmolded (ixxq...m) outline g = gate c = collector e = emitter g c e
ixys reserves the right to change limits, test conditions, and dimensions. IXXQ30N60B3M ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 24a, v ce = 10v, note 1 8 14 s c ie s 1185 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 137 pf c res 25 pf q g(on) 39 nc q ge i c = 24a, v ge = 15v, v ce = 0.5 ? v ces 9 nc q gc 17 nc t d(on) 23 ns t ri 36 ns e on 0.55 mj t d(off) 97 150 ns t fi 125 ns e of f 0.50 0.80 mj t d(on) 23 ns t ri 34 ns e on 1.10 mj t d(off) 112 ns t fi 180 ns e off 0.70 mj r thjc 1.66 c/w r thcs 0.25 c/w inductive load, t j = 25c i c = 24a, v ge = 15v v ce = 400v, r g = 10 ? note 2 inductive load, t j = 150c i c = 24a, v ge = 15v v ce = 400v, r g = 10 ? note 2 overmolded outline 1 = gate 2 = collector 3 = emitter
? 2014 ixys corporation, all rights reserved IXXQ30N60B3M fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 7v 12v 9v 11v 8v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 6v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 45 50 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 8v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 24a i c = 12a i c = 48a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 48a t j = 25oc 24a 12a fig. 6. input admittance 0 10 20 30 40 50 60 456789101112 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXQ30N60B3M fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 0 102030405060 i c - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 50 55 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v ge - volts v ce = 300v i c = 24a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit 100s dc 100ms 1min
? 2014 ixys corporation, all rights reserved fig. 13. inductive switching energy loss vs. gate resistance 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 16. inductive turn-off switching times vs. gate resistance 120 140 160 180 200 220 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 14. inductive switching energy loss vs. collector current 0.2 0.4 0.6 0.8 1 1.2 10 15 20 25 30 35 40 45 50 i c - amperes e off - millijoules 0 0.5 1 1.5 2 2.5 e on - millijoules e off e on - - - - r g = 10 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 0.5 1 1.5 2 2.5 3 e on - millijoules e off e on - - - - r g = 10 ? ???? v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 17. inductive turn-off switching times vs. collector current 20 60 100 140 180 220 260 300 10 15 20 25 30 35 40 45 50 i c - amperes t f i - nanoseconds 40 60 80 100 120 140 160 180 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 60 70 80 90 100 110 120 130 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v i c = 48a i c = 24a IXXQ30N60B3M
ixys reserves the right to change limits, test conditions, and dimensions. IXXQ30N60B3M fig. 20. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 10 15 20 25 30 35 40 45 50 i c - amperes t r i - nanoseconds 16 18 20 22 24 26 28 30 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v t j = 25oc, 125oc fig. 21. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 21 22 23 24 25 26 27 28 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? ? , v ge = 15v v ce = 400v i c = 48a i c = 24a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 10 20 30 40 50 60 70 80 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 90 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 48a i c = 24a ixys ref: ixx_30n60b3d1(4d)05-06-11
|
