050-4952 c 6-2014 ARF477FL maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. rf power mosfet n- channel push - pull pair 165v 400w 100mhz the ARF477FL is a matched pair of rf power transistors in a common source con ? guration. it is designed for high voltage push-pull or parallel operation in ism and mri power ampli ? ers up to 100 mhz. speci? ed 150 volt, 65 mhz characteristics: output power = 400 watts gain = 15db (class ab) ef? ciency = 50% min high performance push-pull rf package. high voltage breakdown and large soa for superior ruggedness. low thermal resistance. rohs compliant ARF477FL common source push-pull pair ss s d d g g s ARF477FL symbol parameter ratings unit v dss drain-source voltage 500 v v dgo drain-gate voltage 500 i d continuous drain current @ t c = 25c (each device) 15 a v gs gate-source voltage 30 v p d total power dissipation @ t c = 25c 750 w t j , t stg operating and storage junction temperature range -55 to 175 c t l lead temperature: 0.063 from case for 10 sec. 300 static electrical characteristics symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 500 v v ds(on) on state drain voltage 1 (i d(on) = 7.5a, v gs = 10v) 2.9 4 i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage drain current (v ds = 50v dss , v gs = 0, t c = 125c) 250 i gss gate-source leakage current (v gs = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 15v, i d = 7.5a) 3.5 5.6 8 mhos g fs1 /g fa2 forward transconductance match ratio (v ds = 15v, i d = 5a) 0.9 1.1 v gs(th) gate threshold voltage (v ds = v gs , i d = 50ma) 35 v gs(th) gate threshold voltage match (v ds = v gs , i d = 50ma) 0.2 volts caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit r jc junction to case 0.18 0.2 c/w r jhs junction to sink (high ef ? ciency thermal joint compound and planar heat sink surface.) 0.30 0.32 thermal characteristics microsemi website - http://www.microsemi.com downloaded from: http:///
050-4952 c 6-2014 ARF477FL 0.10 1.00 10.00 56.00 1 5 10 50 100 500 dynamic characteristics (per section) 1612 84 0 2 4 6 8 10 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 50001000 500100 5010 .1 .5 1 5 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss v ds , drain-to-source voltage (volts) figure 1, typical output characteristics 2520 15 10 50 0 5 10 15 20 25 30 i d , drain current (amperes) 6.5v 5.5v 6v 7v v gs =15 & 10v 9v 8v 4.5v 5v symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1200 1400 pf c oss output capacitance v ds = 150v f = 1mhz 150 180 c rss reverse transfer capacitance 60 75 t d(on) turn-on delay time v gs = 15v v dd = 250v i d = i d[cont.] @ 25c r g = 1.6 7 ns t r rise time 6 t d(off) turn-off delay time 20 t f fall time 4.0 7 functional characteristics symbol characteristic test conditions min typ max unit g ps common source ampli ? er power gain f = 65mhz i dq = 0ma v dd = 150v p out = 400w 14 16 db drain ef ? ciency 50 55 % electrical ruggedness vswr 10:1 no degradation in output power 1. pulse test: pulse width < 380 s, duty cycle < 2%. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
050-4952 c 6-2014 ARF477FL figure 5b, transient thermal impedance model 0 0.05 0.10 0.15 0.20 0.25 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 z jc , thermal impedance (c/w) 0.3 d = 0.9 single pulse rectangular pulse duration (seconds) figure 5a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.7 dissipated powe r (watts ) t j (?c ) t c (?c ) z ext are the external ther mal impedances : case to sink , sink to ambient, et c. set to ze ro when modeling onl y the case to junction . z ext .0915 .108 .0111f .133f freq. (mhz) z in ( )z out ( ) 4060 80 1.5 - j 10 1.9 - j 1.3 2.2 - j 0.82 24 - j 3713 - j 29 7.9 - j 24 z in - gate shunted with 100 i dq = 0 z ol - conjugate of optimum load for 400 watts output at v dd =125v downloaded from: http:///
050-4952 c 6-2014 ARF477FL 1.500 .300 .200 .005 .040 ARF477FL .175 .175 .150 .150 .100 .100 .100 .20 .20 +/- .010 .570 1.250 .320 .125dia 4 pls .125r 4 pls .080 1.000 hazardous material warning the white ceramic portion of the device between leads and mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when inhaled. care must be taken dur- ing handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. thermal considerations and package mounting: the rated power dissipation is only available when the package mounting surface is at 25c and the junction temperature is 175c. the thermal resistance between junctions and case mounting surface is 0.23 c/w. when installed, an additional thermal impedance of 0.07c/w between the package base and the mounting surface is typical. insure that the mounting surface is smooth and flat. thermal joint compound must be used to reduce the effects of small surface irregularities. use the minimum amount necessary to coat the surface. the heatsink should incorporate a copper heat spreader to obtain best results. the package design clamps the ceramic base to the heatsink. a clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. four 4-40 (m3) screws provide the required mounting force. t = 3-4 in-lb (0.34-0.45 n-m). microsemis products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 65mhz test circuit downloaded from: http:///
050-4952 c 6-2014 ARF477FL the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information contained herein may not be modi ? ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of ? cer of microsemi. microsemi reserves the right to change the con ? guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to ? tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci ? cations believed to be reliable but are not veri ? ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's ? nal application. user or customer shall not rely on any data and performance speci ? cations or parameters provided by microsemi. it is the customers and users re- sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speci ? cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro ? t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions. disclaimer: downloaded from: http:///
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