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  c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 rev.a may .201 2 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 4.5a,800v,r ds(on) (max2.5 ? )@v gs =10v ? ultra-low gate charge(typical 14nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe,vdmos technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. absolute maximum ratings symbol parameter value units v dss drain source voltage 8 00 v i d continuous drain current(@tc=25 ) 4.5 a continuous drain current(@tc=100 ) 2.5 a i dm drain current pulsed (note1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 230 mj i ar avalanche current (note1) 4 e ar repetitive avalanche energy (note1) 11 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ns p d total power dissipation(@tc=25 ) 100 w derating factor above 25 1.28 w/ t j junction temperature 150 t stg storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 1.25 /w r qja thermal resistance , junction-to -ambient - - 62.5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 8 00v,v gs =0v ,tc=25 - - 10 a v ds = 640 v,tc=125 - - 100 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 8 00 - - v breakdown voltage temperature ? bv dss / ? t j i d =250 a,referenced to25 - 0.65 - v/ gate threshold voltage v gs(th) v ds = v gs ,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d =2.2 5 a - 2.0 2. 5 ? forward transconductance gfs v ds = 4 0v,i d =2.2 5 a - 4. 6 - s input capacitance c iss v ds =25v, v gs= 0v, f=1mhz - 1320 1716 pf reverse transfer capacitance c rss - 9 12 output capacitance c oss - 105 136 switching time turn-on rise time tr v dd = 4 00v, i d =4. 5 a r g =25 ? (note4,5) - 85 155 ns turn-on delay time t d( on ) - 34 75 turn-off fall time tf - 59 118 turn-off delay time t d( off ) - 56 113 total gate charge(gate-source plus gate-drain) qg v dd = 640 v, v gs =10v, i d =4. 5 a (note,5) - 14 19 nc gate-source charge qgs - 5 - gate-drain("miller") charge qgd - 6 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 4.5 a pulse drain reverse current i drp - - - 16 a forward voltage(diode) v dsf i dr =4. 5 a,v gs =0v - - 1.4 v reverse recovery time trr i dr =4. 5 a,v gs =0v, di dr /dt =100 a / s - 625 - ns reverse recovery charge qrr - 6.71 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 40 mh i as =4 .5 a,v dd =50v,r g = 25 ? ,starting t j =25 3.i sd 4 .5 a,di/dt 200a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 3 / 7 fig.1 on-state characteristics fig.2 transfer characteristics fig.3 on-resistance variation vsdrain current and gate voltage fig.4 body diode forward voltage variation with source current a nd temperature fig.5 capacitance characteristics fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 4 / 7 fig.7 breakdown voltage variation vs.temperature fig.8 on-resistance variation vs. temperature fig. 11 transient thermal response curve fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 5 / 7 fig.1 2 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 6 / 7 fig.1 5 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p p p p 5n 5n 5n 5n 8 8 8 8 0 0 0 0 7 / 7 to-220 to-220 to-220 to-220 c c c c package package package package dimension dimension dimension dimension unit:mm


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