052-6267 rev e 6-2011 apt15gt120b_srdq1(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1ma) gate threshold voltage (v ce = v ge , i c = 0.6ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt15gt120b_srdq1(g) 1200 30 3618 45 45a @ 960v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. min typ max 1200 4.5 5.5 6.5 2.5 3.0 3.6 3.8 200 tbd 480 1200v apt15gt120brdq1 apt15gt120srdq1 APT15GT120BRDQ1G* apt15gt120srdq1g* *g denotes rohs compliant, pb free terminal finish. the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. low forward voltage drop high freq. switching to 50khz low tail current ultra low leakage current rbsoa and scsoa rated thunderbolt igbt ? combi (igbt and diode) t o - 2 4 7 g c e d 3 pa k g c e (s) (b) caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. microsemi website - http://www.microsemi.com downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) microsemi reserves the right to change, without notice, the speci? cations and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max .50 1.18 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 15a t j = 150c, r g = 5 , v ge = 15v, l = 100 h,v ce = 960v inductive switching (25c) v cc = 800v v ge = 15v i c = 15a r g = 5 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 15a r g = 5 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1250 100 65 10 105 10 60 45 10 11 85 35 585 800 260 10 11 95 42 590 1440 340 unit pf v nc a ns j ns j downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250 s pulse test<0.5 % duty cycle 6050 40 30 20 10 0 1614 12 10 86 4 2 0 6 5 4 3 2 1 0 4540 35 30 25 20 15 10 50 14v 12v 11v 10v 13v 9v 8v t j = 125c t j = 25c t j = -55c v ge = 15v. 250 s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c 15v 4540 35 30 25 20 15 10 50 4540 35 30 25 20 15 10 50 6 5 4 3 2 1 0 1.101.05 1.00 0.95 0.90 0.85 0.80 0.75 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 9 10 11 12 13 14 15 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 v ce = 960v v ce = 600v v ce = 240v i c = 15a t j = 25c t j = 25c. 250 s pulse test <0.5 % duty cycle i c = 30a i c = 15a i c = 7.5a i c = 30a i c = 15a i c = 7.5a v ge = 15v downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 5 l = 100 h switching energy losses ( j) e on2 , turn on energy loss ( j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses ( j) e off , turn off energy loss ( j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 600v t j = 25c , t j =125c r g = 5 l = 100 h 1412 10 86 4 2 0 4035 30 25 20 15 10 50 40003500 3000 2500 2000 1500 1000 500 0 80007000 6000 5000 4000 3000 2000 1000 0 120100 8060 40 20 0 4540 35 30 25 20 15 10 50 1000 800600 400 200 0 40003500 3000 2500 2000 1500 1000 500 0 v ge = 15v v ce = 800v v ge = +15v r g = 5 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 , l = 100 h, v ce = 800v r g = 5 , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 30a e off, 30a v ce = 800v v ge = +15v t j = 125c e on2, 15a e off, 15a e on2, 7.5a e off, 7.5a e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 7.5a e off, 7.5a v ce = 800v v ge = +15v r g = 5 t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 5 t j = 125c t j = 25c downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) typical performance curves 0.600.50 0.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 2,0001,000 500100 5010 5045 40 35 30 25 20 15 10 50 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 800v r g = 5 400100 5010 51 c ies 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: c oes c res d = 0.9 downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt15dq120 i c a d.u.t. v ce v cc figure 21, inductive switching test circuit downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) typical performance curves characteristic / test conditions maximum average forward current (t c = 127c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 15a forward voltage i f = 30a i f = 15a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.8 3.4 2.45 apt15gt120b_srdq1(g) 1529 110 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery anti-parallel diode min typ max - 21 - 240 - 260 - 3 - - 290 - 960 - 6 - - 130 - 1340 - 19 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 24. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.201.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) 400350 300 250 200 150 100 50 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 3530 25 20 15 10 50 1.21.0 0.8 0.6 0.4 0.2 0.0 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 29. dynamic parameters vs. junction temperature figure 30. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 31. junction capacitance vs. reverse voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c 0 1 2 3 4 5 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 800v 7.5a 15a 30a t j = 125 c v r = 800v 30a 7.5a 15a 6050 40 30 20 10 0 25002000 1500 1000 500 0 t j = 125 c v r = 800v 30a 15a 7.5a t rr q rr q rr t rr i rrm v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 25. forward current vs. forward voltage figure 26. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 27. reverse recovery charge vs. current rate of change figure 28. reverse recovery current vs. current rate of change downloaded from: http:///
052-6267 rev e 6-2011 apt15gt120b_srdq1(g) typical performance curves apt10078bll 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) collector collector emitter gate 5.45 (.215) bsc 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead ) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 e1 sac: tin, silver, copper e3 100% sn (cathode) (anode) (cathode) (cathode) (anode) (cathode) to-247 package outline dimensions in millimeters (inches) dimensions in millimeters (inches) d 3 pak package outline 1.016 (.040) 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 33. diode reverse recovery waveform de? nition figure 32. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 downloaded from: http:///
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