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2013-11-21 1 BFR106 low noise silicon bipolar rf transistor ? high linearity low noise rf transistor ? 22 dbm op1db and 31 dbm oip3 @ 900 mhz, 8 v, 70 ma ? for uhf / vhf applications ? driver for multistage amplifiers ? for linear broadband and antenna amplifiers ? collector design supports 5 v supply voltage ? pb-free (rohs compliant) package ? qualification report according to aec-q101 available esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFR106 r7s 1=b 2=e 3=c sot23 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage, t a = 25c t a = -55c v ceo 16 15 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 3 collector current i c 210 ma base current i b 21 total power dissipation 1) t s 76 c p tot 700 mw junction temperature t j 150 c storage temperature t st g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 105 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r t hjs please refer to application note an077 (thermal resistance calculation)
2013-11-21 2 BFR106 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 v ce = 10 v, v be = 0 i ces - - - 0.001 1 0.03 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - 1 30 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo - 1 30 dc current gain i c = 70 ma, v ce = 8 v, pulse measured h fe 70 100 140 - 2013-11-21 3 BFR106 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 70 ma, v ce = 8 v, f = 500 mhz f t 3.5 5 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.85 1.2 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.27 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 3.9 - minimum noise figure i c = 20 ma, v ce = 8 v, z s = z sopt , f = 900 mhz i c = 20 ma, v ce = 8 v, z s = z sopt , f = 1.8 ghz nf min - - 1.8 3 - - db 2013-11-21 4 BFR106 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) power gain, maximum available 1) i c = 70 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz i c = 70 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ma - - 13 8.5 - - db transducer gain i c = 70 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz i c = 70 ma, v ce = 8 v, z s = z l = 50 ? , f = 1.8 ghz | s 21e | 2 - - 10.5 5 - - db third order intercept point at output 2) v ce = 8 v, i c = 70 ma, f = 0.9 ghz , z s =z l =50 ? ip 3 - 31 - dbm 1db compression point i c = 70 ma, v ce = 8 v, z s =z l =50 ? , f = 0.9 ghz p -1db - 22 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip 3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz 2013-11-21 5 BFR106 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 350 400 450 500 550 600 mw 750 p tot 2013-11-21 6 BFR106 spice gp model for the spice gummel poon (gp) model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. 2013-11-21 7 BFR106 package sot23 2013-11-21 8 BFR106 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( |
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