SI9430DY vishay siliconix document number: 70124 s-00652erev. j, 27-mar-00 www.vishay.com faxback 408-970-5600 1 p-channel 20-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 20 0.050 @ v gs = 10 v 5.8 20 0.065 @ v gs = 6 v 4.9 0.090 @ v gs = 4.5 v 4.0 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 sss g d d d d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 5.8 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.6 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 2.4 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI9430DY vishay siliconix www.vishay.com faxback 408-970-5600 2 document number: 70124 s-00652erev. j, 27-mar-00
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