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? IRG8B08N120KDpbf irg8p08n120kdpbf irg8p08n120kd-epbf base part number package type standard pack orderable part number form quantity irg8p08n120kdpbf to-247ac tube 25 irg8p08n120kdpbf irg8p08n120kd-epbf to-247ad tube 25 irg8p08n120kd-epbf IRG8B08N120KDpbf to-220ab tube 50 IRG8B08N120KDpbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current (silicon limited) 15 i c @ t c = 100c continuous collector current 8 i cm pulse collector current (see fig. 2) 15 i lm clamped inductive load current (see fig. 3) ? 20 i f @ t c = 25c diode continuous forward current 11 i f @ t c = 100c diode continuous forward current 6 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 89 w p d @ t c = 100c maximum power dissipation 36 t j operating junction and -40 to +150 c ? t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? a i fm diode maximum forward current ? 20 v ces = 1200v i c = 8a, t c =100c t sc ?? 10s, t j(max) = 150c v ce(on) typ. = 1.7v @ i c = 5a insulated gate bipolar transistor with ultrafast soft recovery diode 1 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 features benchmark low v ce(on) high efficiency in a motor drive applications 10 s short circuit soa increases margin for short circuit protection scheme positive v ce(on) temperature coefficient excellent current sharing in parallel operation square rbsoa and high i lm- rating rugged transient performance lead-free, rohs compliant environmentally friendly benefits ? applications industrial motor drive ups solar inverters welding g c e gate collector emitter ? to-247ac irg8p08n120kdpbf e g n-channel c to-247ad irg8p08n120kd-epbf to-220ab IRG8B08N120KDpbf e g c g e c e g c thermal resistance parameter typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? to-220ab CCC 1.3 c/w r ? jc (diode) thermal resistance junction-to-case-(each diode) ? to-220ab CCC 2.6 r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? to-247 CCC 1.4 r ? jc (diode) thermal resistance junction-to-case-(each diode) ? to-247 CCC 2.6 r ? cs thermal resistance, case-to-sink (flat, greased surface)to-220ab 0.50 CCC r ? ja thermal resistance, junction-to-ambient (typical socket mount)to-220ab CCC 62 r ? cs thermal resistance, case-to-sink (flat, greased surface)to-247 0.24 CCC r ? ja thermal resistance, junction-to-ambient (typical socket mount)to-247 CCC 40 downloaded from: http:///
2 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 250a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage 1.2 v/c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.7 2.0 v i c = 5a, v ge = 15v, t j = 25c 2.1 i c = 5a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 5.0 6.5 v v ce = v ge , i c = 200a ? v ge(th) / ? t j threshold voltage te mperature coeff. -14 mv/c v ce = v ge , i c = 200a(25c-150c) gfe forward transconductance 2.9 s v ce = 50v, i c = 5a, pw = 20s i ces collector-to-emitter leakage current 1.0 35 a v ge = 0v, v ce = 1200v 1.0 ma ? v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v v f ? diode forward voltage drop ? 2.3 2.7 i f = 5a 2.5 i f = 5a, t j = 150c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) 30 45 nc i c = 5a q ge gate-to-emitter charge (turn-on) 1.1 1.7 v ge = 15v q gc gate-to-collector charge (turn-on) 20 v cc = 600v e on turn-on switching loss 0.3 mj ? i c = 5a, v cc = 600v, v ge =15v r g = 47 ? , t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss 0.3 e total total switching loss 0.6 t d(on) turn-on delay time 20 ns ? t r rise time 20 t d(off) turn-off delay time 160 t f fall time 240 e on turn-on switching loss 0.5 mj ? i c = 5a, v cc = 600v, v ge =15v r g = 47 ? , t j = 150c energy losses include tail & diode reverse recovery ? ? e off turn-off switching loss 0.5 e total total switching loss 1.0 t d(on) turn-on delay time 20 ns t r rise time 20 t d(off) turn-off delay time 300 t f fall time 290 c ies input capacitance 720 v ge = 0v c oes output capacitance 30 pf v cc = 30v c res reverse transfer capacitance 15 f = 1.0mhz rbsoa reverse bias safe operating area t j = 150c, i c = 20a full square v cc = 960v, vp 1200v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 10 ? ? ? s ? t j = 150c,v cc = 600v, vp 1200v v ge = +15v to 0v erec reverse recovery energy of the diode 240 j t j = 150c t rr diode reverse recovery time 50 ns v cc = 600v, i f = 5a i rr peak reverse recovery current 11 a v ge = 15v, rg = 47 ? v notes: ? v cc = 80% (v ces ), v ge = 20v. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement . downloaded from: http:///
3 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 14 16 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 36w i square wave: v cc diode as specified 10 100 1000 10000 v ce (v) 1 10 100 i c ( a ) fig. 5 - typ. igbt saturation voltage v ge = 15v; tp = 20s 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 0 2 4 6 8 10 v ce (v) 0.1 1.0 10 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 4 - typ. igbt output characteristics t j = 25c; tp = 20s fig. 2 - forward soa t c = 25c; t j 150c; v ge = 15v 0 2 4 6 8 v ce (v) 0.1 1 10 100 i c e ( a ) tc = -40c tc = 25c tc = 150c fig. 3 - reverse bias soa t j = 150c; v ge = 20v downloaded from: http:///
4 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 4 6 8 10 12 14 16 v ge (v) 0.1 1 10 100 i c e ( a ) t j = -40c t j = 25c t j = 150c 40 60 80 100 120 140 160 180 200 220 rg ( ? ) 0.0 0.3 0.6 0.9 1.2 e n e r g y ( m j ) e on @ tj = 150c e off @ tj = 150c e rr @ tj = 150c eon @ tj = 25c eoff @ tj = 25c err @ tj = 25c fig. 10 - typ. energy loss vs. r g v ce = 600v, i ce = 5a; v ge = 15v 40 60 80 100 120 140 160 180 200 220 r g ( ? ) 1 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td on t f td off fig. 11 - typ. switching time vs. r g t j = 150c; v ce = 600v, i ce = 5a; v ge = 15v 0 2 4 6 8 10 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td on t f td off fig. 9 - typ. switching time vs. i c t j = 150c; v ce = 600v, r g = 47 ? ; v ge = 15v fig. 7 - typical gate charge vs. v ge i ce = 5a 12345678910 i c (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e n e r g y ( m j ) e off @ tj = 150c e on @ tj = 150c e rr @ tj = 150c e off @ tj = 25c e on @ tj = 25c e rr @ tj = 25c fig. 8 - typ. energy loss vs. i c v ce = 600v, r g = 47 ? ; v ge = 15v fig. 6 - typ. transfer characteristics v ce = 50v; tp = 20s downloaded from: http:///
5 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf fig. 14 - typ. diode forward voltage drop characteristics fig. 13 - typ. diode e rr vs. i f t j = 150c fig. 12 - fig. 12 - typ. i rr vs. di/dt 350 400 450 500 550 600 di f /dt (a/s) 8.5 9.0 9.5 10.0 10.5 11.0 i r r ( a ) v cc = 600v tj = 150c v ge = 15v i f = 5a r g = 220 ? r g = ???? r g = 47 ? r g = 148 ? 0 2 4 6 8 10 i f (a) 0 100 200 300 400 500 e n e r g y ( j ) r g = 47 ? r g = 100 ? r g = 148 ? r g = 220 ? 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0.1 1 10 100 i f ( a ) -40c 25c 150c downloaded from: http:///
6 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf fig. 16 - maximum transient thermal impedance, junction-to-case (diode) to-247 fig. 15 - maximum transient thermal impedance, junction-to-case (igbt) to-247 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.12192 0.000058 0.48468 0.000092 0.51027 0.001541 0.28298 0.011665 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.07490 0.000029 1.19683 0.000184 0.93086 0.002329 0.39894 0.01613 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 downloaded from: http:///
7 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 17 - maximum transient thermal impedance, junction-to-case (igbt) to-220ab ri (c/w) ? i (sec) ? 0.03109 0.000014 0.51536 0.000089 0.50866 0.001767 0.24474 0.01039 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 18 - maximum transient thermal impedance, junction-to-case (diode) to-220ab ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.03331 0.000013 1.22958 0.000240 0.94175 0.002513 0.39481 0.015930 downloaded from: http:///
8 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit (board stray inductance 180nh) fig.c.t.5 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v g force c sense 100k dut 0.0075f d1 22k e force c force e sense downloaded from: http:///
9 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf fig. wf1 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -5 0 5 10 15 20 25 30 35 40 -100 0 100 200 300 400 500 600 700 800 -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 ice (a) vce (v) time (us) v ce i ce downloaded from: http:///
10 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . downloaded from: http:///
11 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. downloaded from: http:///
12 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irgp30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. downloaded from: http:///
13 www.irf.com ? 2014 international rectifier submit datasheet feedback december 12, 2014 ? IRG8B08N120KDpbf/irg8p08n120kdpbf/irg8p08n120kd-epbf ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level ? industrial ? (per jedec jesd47f) ?? moisture sensitivity level ? to-247ac to-247ad rohs compliant yes n/a ? to-220 ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comments 12/12/2014 ?? added to-220 package in the datasheet. downloaded from: http:///

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