050-7718 rev a 4-2015 APT70SM70J silicon carbide n-channel power mosfet maximum ratings microsemi website - http://www.microsemi.com APT70SM70J 700v, 49a, 53m? APT70SM70J static characteristics t j = 25c unless otherwise speciied symbol parameter test conditions min typ max unit v br(dss) drain-source breakdown voltage v gs = 0v , i d = 1ma 700 v ?v br(dss) /?t j breakdown voltage temperature coeficient reference to 25c, i d = 1ma 0.027 v/c r ds(on) drain-source on resistance 2 v gs = 20v , i d = 32.5a 53 70 m? v gs(th) gate-source threshold voltage v gs = v ds , i d = 1ma 1.7 2.5 v ?v gs(th) /?t j threshold voltage temperature coeficient -4.69 mv/c i dss zero gate voltage drain current v ds = 700v v gs = 0v t j = 25c 100 a t j = 150c 250 i gss gate-source leakage current v gs = +20v / -10v 100 na esr equivalent series resistance f = 1mhz, 25mv, drain short 1.12 ? symbol parameter ratings unit v dss drain source voltage 700 v i d continuous drain current @ t c = 25c 49 a continuous drain current @ t c = 100c 34 i dm pulsed drain current 1 154 v gs gate-source voltage -10 to +25 v p d total power dissipation @ t c = 25c 165 w linear derating factor 1.1 w/ c g d s typical applications ? pfc and other boost converter ? buck converter ? two switch forward (asymmetrical bridge) ? single switch forward ? flyback ? inverters features ? ultra low sensitivity of r ds(on) to temperature ? fast switching with low emi/rfi ? low switching energy ? low r ds(on) temperature coeficient for improved eficiency ? ultra low gate resistance ? rohs compliant s ot -227 is oto p ? g s s d thermal and mechanical characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.63 0.91 c/w t j ,t stg operating and storage junction temperature range -55 175 c torque mounting torque ( sot-227 package), 6-32 or m3 screw 10 inlbf 1.1 nm w t package weight 1.03 oz 29.2 g downloaded from: http:///
050-7718 rev a 4-2015 APT70SM70J dynamic characteristics t j = 25c unless otherwise speciied 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380s, duty cycle < 2%. 3 r g is total external gate resistance not including internal gate driver impedance. symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v, v dd = 700v f = 1mhz 1950 pf c rss reverse transfer capacitance 50 c oss output capacitance 230 e oss output capacitance stored energy v gs = 0v, v dd = 700v f = 1mhz 60 j c o(er) effective output capacitance 245 pf q g total gate charge v gs = 0/20v v dd = 466v i d = 32.5a 125 nc q gs gate-source charge 21 q gd gate-drain charge 35 t d(on) turn-on delay time v dd = 466v v gs = 0/20v i d = 32.5a r g = 3.0 3 l = 115 h t c = 25c freewheeling diode = apt20sce65b 12 ns t r current rise time 14 t d(off) turn-off delay time 33 t f current fall time 23 e on2 turn-on switching energy 645 j e off turn-off switching energy 170 t d(on) turn-on delay time v dd = 466v v gs = 0/20v i d = 32.5a r g = 3.0 3 l = 115 h t c = 150c freewheeling diode = apt20sce65b 10 ns t r current rise time 13 t d(off) turn-off delay time 37 t f current fall time 27 e on2 turn-on switching energy 540 j e off turn-off switching energy 225 symbol parameter test conditions min typ max unit v sd diode forward voltage i sd = 32.5a , v gs = 0v 4.25 v t rr reverse recovery time i sd = 32.5a, v dd = 466v di / dt = -1000a/s 45 ns q rr reverse recovery charge 250 nc i rrm reverse recovery current 10 a source-drain diode characteristics t j = 25c unless otherwise speciied downloaded from: http:///
050-7718 rev a 4-2015 APT70SM70J typical performance curves 0.9 0.95 1 1.05 1.1 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 05 10 15 20 25 t j = 25c t j , junction temperature (c) figure 5, r ds(on) vs junction temperature 10 100 1000 10000 11 0 100 700 v ds , drain-to-source voltage (v) figure 1, output characteristics 0 20 40 60 80 100 120 140 160 02468 10 12 14 i d , drain current (a) v gs = 20v t j = 125c t j = 150c t j = 175c v ds , drain-to-source voltage (v) figure 2, output characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 7, capacitance vs drain-to-source voltage c, capacitance (pf) normalized to v gs = 20v @ 32.5a c oss c iss c rss 0 20 40 60 80 100 120 140 160 05 10 15 20 25 t j = 150c v ds , drain-to-source voltage (v) figure 3, output characteristics i d , drain current (a) 0 20 40 60 80 100 120 140 160 05 10 15 20 25 t j = 175c 20v 10v 18v 14v v ds , drain-to-source voltage (v) figure 4, output characteristics i d , drain current (a) 16v 12v 8v 6v 20v 10v 18v 14v 16v 12v 8v 6v 20v 10v 18v 14v 16v 12v 8v 6v t j = 75c t j = 25c r ds(on) , drain-to-source on resistance (normalized to 25c) f = 1mhz v gs = 0v 0 5 10 15 20 25 0 100 200 300 400 500 0 20 40 60 80 100 120 140 q g , total gate charge (nc) figure 6, gate charge vs gate-to-source voltage v gs , gate-to-source voltage (v) qgd qgs vds vgs qg 0 10 20 30 40 50 60 0 100 200 300 400 500 600 700 v ds , drain-to-source voltage (v) figure 8, typical output capacitance stored energy, e oss c oss stored energy, e oss (uj) v gs = 0v f = 1mhz v ds , drain-to-source voltage (v) downloaded from: http:///
050-7718 rev a 4-2015 APT70SM70J 0.1 1 10 100 1000 11 0 100 1000 0.90 0.95 1.00 1.05 1.10 25 50 75 100 125 150 175 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0?4.5 ?4 ?3.5 ?3 ?2.5 ?2 ?1.5 ?1 ?0.5 0 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 ?4.5 ?4 ?3.5 ?3 ?2.5 ?2 ?1.5 ?1 ?0.5 0 0.6 0.7 0.8 0.9 1 25 50 75 100 125 150 175 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 ?4.5 ?4 ?3.5 ?3 ?2.5 ?2 ?1.5 ?1 ?0.5 0 typical performance curves v ds , drain-to-source voltage (v) figure 11, reverse drain current vs drain-to-source voltage third quadrant conduction i ds, reverse drain current (a) v ds , drain-to-source voltage (v) figure 12, reverse drain current vs drain-to-source voltage third quadrant conduction i ds, reverse drain current (a) v ds , drain-to-source voltage (v) figure 10, reverse drain current vs drain-to-source voltage third quadrant conduction i ds, reverse drain current (a) 10ms 100s 100ms/dc 1ms v ds , drain-to-source voltage (v) figure 15, forward safe operating area i d , drain current (a) t j , junction temperature (c) figure 13, breakdown voltage vs temperature v br(dss), breakdown voltage (v) (normalized to 25c) 10s r ds(on) t j = 175c t c = 100c t j = 25c i d = 1ma t j , junction temperature (c) figure 14, threshold voltage vs temperature v gs(th) , threshold voltage (v) (normalized to 25c) t j = 150c -5 v gs -4 v gs -3 v gs -2 v gs -1 v gs 0 v gs -5 v gs -4 v gs -3 v gs -2 v gs -1 v gs 0 v gs t j = 125c -5 v gs -4 v gs -3 v gs -2 v gs -1 v gs 0 v gs v ds , drain-to-source voltage (v) figure 9, effective output capacitance, c o(er) effective output capacitance, c o(er) (pf) 200 250 300 350 400 450 500 550 600 100 200 300 400 500 600 700 v gs = 0v f = 1mhz downloaded from: http:///
050-7718 rev a 4-2015 APT70SM70J 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 110 10 -4 10 -3 10 -2 0.1 1 10 10 -5 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 16, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : dimensions in millimeters (inches) 31.5 (1.240)31.7 (1.248) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source emitter terminals are shorte d internally. current handling capability is equal for either source terminal . sot-227 (isotop ? ) package outline downloaded from: http:///
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