t4 - lds -0 037 -1, rev 1 (111456) ?2011 microsemi corporation page 1 of 5 1n5518b thru 1n5546b-1 available on commercial versions low voltage avalanche 500 mw zener diodes do -35 qualified per mil - prf - 19500/437 qualified levels : jan, jantx and jantxv description the 1n5518 thru 1n5546 series of 0.5 watt axial - leaded glass zener voltage regulators provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus 1% to 2 0%. the standard tolerance is plus/minus 5% with the b suffix unless ordered otherwise. th ese axial - leaded glass do - 35 zeners are also available with an internal metallurgical bo nd option . this type of bonded zener package construction is also available in jan, jantx, and jantxv military qualifications. microsemi also offers numerous other zener product s to meet higher and lower power applications. do - 35 (do - 204ah) package also available in : do - 213aa melf (surface mount) 1n5518bur - 1 thru 1n5546bur -1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n551 8 thru 1n5546. ? voltage tolerance s of plus/minus 20%, 10%, 5%, 2%, and 1% available. see note 1 on page 3. ? internal metallurgical bond option available with - 1 suffix . ? jan, jantx, and jantxv qualification per mil - prf - 19500/437 available (requires metallurgical bond option as well as plus/minus 5% voltage tolerance or tighter with b - 1, c - 1 or d - 1 suffix ). ? rohs compliant versions available (commercial grade only) . applications / benefits ? regulates voltage over a broad operating current and temperature range . ? guaranteed voltage regulation ( ? v z ) from i zl to i zt . ? voltag e selection from 3.3 to 33 v . ? flexible axial - lead mounting terminals . ? nonsensitive to esd per mil - std - 750 method 1020 . ? minimal capacitance (see figure 3 ). ? inherently radiation hard as described in microsemi micronote 050 which is available at microsemi.com . maximum ratings msc C lawrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (9 78) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 o c steady - state power ( note 1) (also see derating in figure 2 ) p d 0.5 w thermal resistance junction - to - lead ( note 2) r ? jl 250 o c /w thermal resistance junction - to - ambient ( note 3) r ? ja 30 0 o c /w forward voltage @ 200 ma v f 1.1 v solder pad temperature @ 10 s t sp 260 o c notes : 1. a t t l < 50 o c 3/8 inch (10 mm) from body or 0.48 w at t a < 25 o c when mounted on fr4 p c board as described for thermal resistance above . 2. a t 3/8 (10 mm) lead length from body. 3. w hen mounted on fr4 pc board (1 oz cu) with 4 mm 2 copper pads and track width 1 mm, length 25 mm . downloaded from: http:///
t4 - lds -0 037 -1, rev 1 (111456) ?2011 microsemi corporation page 2 of 5 1n5518b thru 1n5546b-1 mechanical and packaging ? case: hermetically sealed axial - lead glass do - 35 (do - 204ah) package. ? terminals: leads, tin - lead plated solderable per mil - std - 750, method 2026. rohs compliant matte - tin available for commercial only. ? polarity: cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite end for zener regulation. ? marking: part number. ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? weight: 0.2 grams. ? see p ackage d imensions on last page. part nomenclature jan 1n5 518 b -1 (e3) reliability level jan = jan level jant x = jant x level jantx v = jantx v level blank = commercial jedec type number (s ee e lectrical characteristic t able ) zener voltage tolerance a = 10% b = 5% c = 2% d = 1% blank = 20% rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant metallurgical bond - 1 = metallurgical b ond blank = standard b ond symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specifi ed test point (i zt ), near breakdown knee (i zk ). i zl low regulator (zener) current: the lowest rated dc current for the specified power rating. i zm maximum regulator (zener) current: the maximum rated dc current for the specified power rat ing. v z zene r voltage: the zener voltage the device will exhibit at a specified current (i z ) in its breakdown region. ? v z voltage regulation: the change in zener voltage between two specified currents or percentage of i zm . z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. downloaded from: http:///
t4 - lds -0 037 -1, rev 1 (111456) ?2011 microsemi corporation page 3 of 5 1n5518b thru 1n5546b-1 electrical characteristics (t a = 25 o c unless otherwise noted. based on dc measurements at thermal equilibrium; v f = 1.1 max @ if = 200 ma for all types.) jedec type number (note 1) nominal zener voltage v z @ i zt (note 2) v olts test current i zt ma max. zener impedance b-c- d suffix z zt @ i zt (note 3) o hms ma x. reverse leakage current (note 4) b-c- d suffix maximum dc zener current i zm (note 5) madc b-c- d suffix max. noise density at i z = 250 a n d v/ hz regulation factor ? v z (note 6) v olts low v z current i zl (note 6) ma i r a v r C v olts non & a - suffix b-c- d suffix 1n5518 1n5519 1n5520 1n5521 1n5522 3.3 3.6 3.9 4.3 4.7 20 20 20 20 10 26 24 22 18 22 5.0 3.0 1.0 3.0 2.0 0.90 0.90 0.90 1.0 1.5 1.0 1.0 1.0 1.5 2.0 115 105 98 88 81 0.5 0.5 0.5 0.5 0.5 0.90 0.90 0.85 0.75 0.60 2.0 2.0 2 .0 2.0 1.0 1n5523 1n5524 1n5525 1n5526 1n5527 5.1 5.6 6.2 6.8 7.5 5.0 3.0 1.0 1.0 1.0 26 30 30 30 35 2.0 2.0 1.0 1.0 0.5 2.0 3.0 4.5 5.5 6.0 2.5 3.5 5.0 6.2 6.8 75 68 61 56 51 0.5 1.0 1.0 1.0 2.0 0.65 0.30 0.20 0.10 0.05 0.25 0.25 0.01 0.01 0.01 1n5528 1 n5529 1n5530 1n5531 1n5532 8.2 9.1 10.0 11.0 12.0 1.0 1.0 1.0 1.0 1.0 40 45 60 80 90 0.5 0.1 0.05 0.05 0.05 6.5 7.0 8.0 9.0 9.5 7.5 8.2 9.1 9.9 10.8 46 42 38 35 32 4.0 4.0 4.0 5.0 10 0.05 0.05 0.10 0.20 0.20 0.01 0.01 0.01 0.01 0.01 1n5533 1n5534 1n5535 1 n5536 1n5537 13.0 14.0 15.0 16.0 17.0 1.0 1.0 1.0 1.0 1.0 90 100 100 100 100 0.01 0.01 0.01 0.01 0.01 10.5 11.5 12.5 13.0 14.0 11.7 12.6 13.5 14.4 15.3 29 27 25 24 22 15 20 20 20 20 0.20 0.20 0.20 0.20 0.20 0.01 0.01 0.01 0.01 0.01 1n5538 1n5539 1n5540 1n5541 1n5542 18.0 19.0 20.0 22.0 24.0 1.0 1.0 1.0 1.0 1.0 100 100 100 100 100 0.01 0.01 0.01 0.01 0.01 15.0 16.0 17.0 18.0 20.0 16.2 17.1 18.0 19.8 21.6 21 20 19 17 16 20 20 20 25 30 0.20 0.20 0.20 0.25 0.30 0.01 0.01 0.01 0.01 0.01 1n5543 1n5544 1n5545 1n5546 25.0 28.0 30.0 33.0 1.0 1.0 1.0 1.0 100 100 100 100 0.01 0.01 0.01 0.01 21.0 23.0 24.0 28.0 22.4 25.2 27.0 29.7 15 14 13 12 35 40 45 50 0.35 0.40 0.45 0.50 0.01 0.01 0.01 0.01 notes: 1. tolerance and voltage designation C the jedec type numbers show n are +/ - 20% with guaranteed limits for only v z , i r , and v f . units with a suffix are +/ - 10% with guaranteed limits for v z , i r , and v f . units with guaranteed limits for all six parameters are indicated by a b suffix for +/ - 5.0% units, c suffix for +/ - 2.0% and d suffix for +/ - 1.0%. 2. zener voltage (v z ) measurement C nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 o c. 3. zener impedance (z z ) measurement C the zener impedance is derived from the 60 hz ac voltage, which results when an ac current having an rms val ue equal to 10% of the dc zener current (i zt ) is superimposed on i zt . 4. reverse leakage current (i r ) C reverse leakage currents are guaranteed and are measured at v r as shown on the table. 5. maximum regulator current (i zm ) C the maximum current shown is as shown in mil - prf - 19500/437. 6. maximum regulation factor ( ? v z ) C ? v z is the maximum difference between v z at i zt and v z at i zl measured with the device junction in thermal equilibr ium. downloaded from: http:///
t4 - lds -0 037 -1, rev 1 (111456) ?2011 microsemi corporation page 4 of 5 1n5518b thru 1n5546b-1 graphs figure 1 t l C lead temperature ( o c) 3/8 from body noise density measurement circuit figure 2 C t emperature -p ower derating curve zener voltage v z figure 3 figure 4 capacitance vs. zener voltage zener diode characteristics and symbol identification (typical) rated maximum dc operation (mw) noise density, (n d ) is specified in microvolts rms per square - root - hertz ( v/ hz). actual measurement is performed usi ng a 1 khz to 3 khz frequency bandpass filter with a constant zener test current (i zt ) at 25 o c ambient temperature. typical capacitance in picofarads at zero volts at C 2 volts (vr) downloaded from: http:///
t4 - lds -0 037 -1, rev 1 (111456) ?2011 microsemi corporation page 5 of 5 1n5518b thru 1n5546b-1 package dimensions ltr d imensions notes inch m illimeters min max min max bd .055 .090 1.40 2.29 3 bl .120 .200 3.05 5.08 3 ld .018 .022 0.46 0.56 ll 1.000 1.500 25.40 38.10 ll 1 .050 1.27 4 no tes: 1 . d imension s ar e in inch . 2 . m illimeter s ar e gi ven fo r genera l informatio n onl y. 3 . packag e contou r option al w ithi n b d an d lengt h bl . h ea t slugs , if an y , shal l be include d w ithi n thi s cy linde r bu t shal l no t be subjec t to minimum limi t of b d. the bl dimensio n shal l includ e th e entir e bod y including slugs. 4 . w ithi n thi s z on e lead , diamete r may v ar y to allo w for lea d finishe s and irregularitie s othe r tha n hea t slugs. 5 . in accordanc e w it h asme y 14.5 m, diameter s ar e equi v alen t to x sy mbolog y. downloaded from: http:///
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