, o ne. 2 0 ster n a springfie l u.s.a . ye . d , ne w jerse y 0708 1 bipola r powe r pn p lo w dropou t regulato r transisto r th e mje112 3 i s a n application s specifi c devic e designe d t o provid e low-dropo u inea r regulatio n fo r switching-regulato r pos t regulators , batter y powere d system s an d othe r applications . th e mje112 3 i s fully spec f e d i n th e saturatio n regio n an d exhibit s th e followin g mai n features : ? hig h gai n limit s base-driv e losse s t o onl y 1-2 % o f circui t outpu t curren t ? gai n i s 10 0 minimu m a t i q = 1 . 0 amp , vc e = 7 - 0 volt s ? excellen t saturatio n voltag e characteristic , 0. 2 volt s maximu m a t 1 . 0 am p maximu m rating s (t c = 25 c unles s otherwis e noted. ) ratin g collector-emitte r sustainin g voltag e collector-bas e voltag e emitter-bas e voltag e collecto r curren t continuou s pea k bas e curren t continuou s tota l powe r dissipatio n @ t c = 25 c derat e abov e 25 c operatin g an d storag e temperatur e symbo l vceo vc b ve b " c 'c m i b p d tj . t st g valu e 4 0 5 0 5. 0 4.0 8. 0 4. 0 7 5 0. 6 -65to+15 0 uni t vd c vd c vd c ad c ad c watt s w/ c c therma l characteristic s therma l resistanc e junctio n t o cas e junctio n t o ambien t maximu m lea d temperatur e fo r solderin g purposes : 1/8 " fro m cas e fo r 5 second s rej c rgj a t l 1.6 7 7 0 27 5 c/ w c mje112 3 pn p lo w dropou t transisto r 4. 0 ampere s 4 0 volt s in ll i to-220a b electrica l characteristic s (t c = 25 c unles s otherwis e noted ) characteristi c symbo l mi n ty p ma x uni t of f characteristics * collector-emitte r sustainin g voltag e (| q = 1 . 0 ma , i = 0 ) emitter-bas e voltag e (i e = 10 0 ua ) collecto r cutof f curren t (vc e = 7 - vdc > i b = ) (vc e = 2 0 vdc . i b = o) v ceo(sus ) v eb o 'ce o 4 0 7, 0 6 5 1 1 10 0 25 0 vdcvdc jjad c o n characteristics * collector-emitte r saturatio n voltag e (l c = 1 . 0 adc , i b = 2 0 madc ) (i c = 1-0 adc , i b = 5 0 madc ) (i c = 1. 0 adc , i b = 12 0 madc ) (1 c = 2. 0 adc , i b = 5 0 madc ) (1 c =2. 0 adc , | b = 12 0 madc ) (1 c =4. 0 adc , i b = 12 0 madc ) v ce(sat ) 0.1 6 0.1 3 0.1 0 0.2 5 0.2 0 0.4 5 0.3 0 0.2 5 0.2 0 0.4 0 0.3 5 0.7 5 vd c ' indicate s puls e test : puls e widt h = 30 0 u s max , dut y cycl e = 2% . n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s entourage s customer s t o verif y tha t datasheet s nr e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
mje112 3 electrica l characteristic s continue d (t c = 25" c unles s otherwis e noted ) characteristi c symbo l mi n ty p ma x uni t o n characteristics * (continued ) base-emitte r saturatio n voltag e (l c = 1 . 0 adc , i b = 2 0 madc ) o c = 2. 0 adc , i b = 5 0 madc ) (l c = 4.0adc , | b = 12 0 madc ) d c curren t gai n (i c = 1. 0 adc , vc e = 7. 0 vdc ) (1 c = 1 - 0 adc , vce = 1 0 vdc ) (1 c = 2. 0 adc , vc e = 7. 0 vdc ) (1 c = 2. 0 adc , vc e = 1 0 vdc ) (1 c = 4. 0 adc , vc e = 7. 0 vdc ) (1 c =4. 0 adc , vc e = 1 0 vdc ) base-emitte r o n voltag e (l c = 1. 0 adc , vc e = 1. 0 vdc ) (1 c = 2. 0 adc , vc e = 1. 0 vdc ) (1 c =4. 0 adc , vce = 1.0 vdc ) v be(sat ) hf e v be(on ) 10 0 10 0 7 5 8 0 4 5 4 5 0.7 7 0.8 7 1.0 0 17 0 18 0 12 0 14 0 7 5 7 9 0.7 5 0.8 4 0.9 0 0.9 5 1.2 0 1.4 0 22 5 22 5 17 0 18 0 10 0 10 0 0.9 0 1.0 0 1.2 0 vd c vdc dynami c characteristic s current-gai n bandwidt h produc t (1 c = 1 . 0 adc , vc e = 4. 0 vdc , f = 1 . 0 mhz ) < t 5. 0 11. 5 mh z * indicate s puls e test : puls e widt h = 30 0 u s max , dut y cycl e = 2% . ) , collector-emitte r \tio n voltag e (volts ) po p ^* . e n b o - iff g 0. 2 0 ? 1 c -4 a , i b - 1 a u - 0 0 m a * n m a l r = 1 a,i b = 'om a l c , collecto r curren t (amps ) figur e 1 . saturatio n voltag e versu s collecto r curren t a s a functio n o f bas e driv e 2 0 4 0 6 0 8 0 tj , cas e temperatur e (c ) figur e 2 . saturatio n voltag e versu s temperatur e 10 0 downloaded from: http:///
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