may 2016 docid029139 rev 1 1 / 8 this is information on a product in full production. www.st.com stpsc10h12 1200 v p ower schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? robust high voltage periphery description the sic diode, available in to - 220ac, is an ultrahigh performance power schottky rectifier. it is manufactured using a silicon carbide subst rate. the wide band - gap material allows the design of a low v f schottky diode structure with a 1200 v rating. due to the schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. the minimal capacitive turn - off behavior i s independent of temperature. especially suited for use in pfc and secondary side applications, this st sic diode will boost the performance in hard switching conditions. this rectifier will enhance the performance of the targeted application. its high for ward surge capability ensures a good robustness during transient phases. table 1: device summary symbol value i f(av) 10 a v rrm 1200 v t j (max) 175 c v f (typ) 1.35 v a k a k k t o-220ac
characteristics stpsc10h12 2 / 8 docid029139 rev 1 1 characteristics table 2: absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage (t j = - 40 c to +175 c) 1200 v i f(rms) forward rms current 25 a i f(av) average forward current t c = 155 c, dc current 10 a i frm repetitive peak forward current t c = 155 c, t j = 175 c, = 0.1 38 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal t c = 25 c 71 a t c = 150 c 60 t p = 10 s square t c = 25 c 420 t stg storage temperature range - 65 to + 175 c t j operating junction temperature range - 40 to + 175 c table 3: thermal parameters symbol parameter typ. max. unit r th(j - c) junction to case 0.65 0.9 c/w table 4: static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm - 5 60 a t j = 150 c - 30 400 v f (2) forward voltage drop t j = 25 c i f = 10 a - 1.35 1.50 v t j = 150 c - 1.75 2.25 notes: (1) pulse test: t p = 10 ms, < 2% (2) pulse test: t p = 500 s, < 2% to evaluate the conduction losses use the following equation: p = 1.03 x i f(av) + 0.122 i f 2 (rms) table 5: dynamic electrical characteristics symbol parameter test conditions min. typ. max. unit q cj (1) total capacitive charge v r =800 v - 57 - nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz - 725 - pf v r = 300 v, t c = 25 c, f = 1 mhz - 60 - notes: (1) most accurate value for the capacitive charge: ? ?? = ? ? ( ? ? ) ? ??? 0 ? ?? ?
stpsc10h12 characteristics docid029139 rev 1 3 / 8 1.1 characteristics (curves) figure 1 : forward voltage drop versus forward current ( typical values) figure 2 : reverse leakage current versus reverse voltage applied ( typical values) figure 3 : peak forward current versus case temperature figure 4 : junction capacitance versus revers e voltage applied ( typical values) figure 5 : relative variation of thermal impedance junction to case versus pulse duration figure 6 : non - repetitive peak surge forward current versus pulse duration ( sinusoidal waveform ) i f s m ( a ) 1 . e + 0 1 1 . e + 0 2 1 . e + 0 3 1 . e - 0 5 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 t a = 1 5 0 c t a = 2 5 c t p ( s ) c j ( p f ) 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 0 . 1 1 . 0 1 0 . 0 1 0 0 . 0 1 0 0 0 . 0 1 0 0 0 0 . 0 v r ( v ) f = 1 m h z v o s c = 3 0 m v r m s t j = 2 5 c z t h ( j - c ) / r t h ( j - c ) 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . e - 0 5 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 1 . e - 0 1 1 . e + 0 0 s i n g l e p u l s e t p ( s ) i r ( a ) 1 . e - 0 3 1 . e - 0 2 1 . e - 0 1 1 . e + 0 0 1 . e + 0 1 1 . e + 0 2 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 1 2 0 0 v r ( v ) t j = 1 5 0 c t j = 2 5 c 0 2 0 4 0 6 0 8 0 1 0 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 i m ( a ) = 0 . 1 = 0 . 3 = 1 = 0 . 7 t c ( c ) = 0 . 5 t = t p / t t p 0 5 1 0 1 5 2 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 = 5 0 0 s p u l s e t e s t : t v f ( v ) i f ( a ) c = 2 5 p a = 1 5 0 c t a t
characteristics stpsc10h12 4 / 8 docid029139 rev 1 figure 7 : total capacitive charges versus reverse voltage applied ( typical values) q c j ( n c ) 0 1 0 2 0 3 0 4 0 5 0 6 0 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 v r ( v )
stpsc10h12 package information docid029139 rev 1 5 / 8 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque value: 0.4 to 0.6 n?m 2.1 to - 220ac rectifier package information figure 8 : to - 220ac package outline
package information stpsc10h12 6 / 8 docid029139 rev 1 table 6: to - 220ac package mechanical data ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam 3.75 3.85 0.147 0.151
stpsc10h12 ordering information docid029139 rev 1 7 / 8 3 ordering information table 7: ordering information order code marking package weight base qty delivery mode STPSC10H12D STPSC10H12D to - 220ac 1.86 g 50 tube 4 revision history table 8: document revision history date revision changes 03 - may - 2016 1 first issue
stpsc10h12 8 / 8 docid029139 rev 1 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved
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