jiangsu changjiang electronics technology co., l td dfnwb2x2-6l-u plastic-encap sulate mosfets www.cj-elec.com 1 c , jun ,2016 CJM7201 n-channel +p-channel mosfet fea ture application marking equivalent circuit dfnwb2 2-6 l -u ? surface mount package ? trenchfet power mosfet ? high density cell design for low r ds( o n) ? v o lt age cont rolled small signal switch ? rugg ed an d reliable ? high saturation current capability ? ? load switch for portable devices dc/dc converter absolute maximum ratings (t a =25 unless other w is e noted) parameter symbol value unit n-mosfet drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (not e 1) i d 0.115 a pulsed drain current (tp=10us) i dm 0.46 a p-mosfet drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current (not e 1) i d -2.3 a pulsed drain current (tp=10us) i dm -10 a temperature and thermal resistance thermal resistance from junction to ambient (note 1) r ja 167 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes( 1/8?? from case for 10 s) t l 260 v (br)dss r ds(on) max i d 60v 7 ? @10v 0.115a 7 ? @5v -20v 112m ? @-4.5v -2.3a 142m ? @-2.5v
z z z f m h o h f f r p c,jun,2016 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 n-ch mosfet electrical characteristics(t a =25 unless otherwise noted) parameter symbol te st condition min typ max unit static ch aracteristics drain-source b reakdown voltage v (br)dss v gs = 0v, i d =250a 60 v zero gate voltage dra in current i dss v ds =60v,v gs = 0v 80 na gate-body leakage curr ent i gss v gs =20v, v ds = 0v 80 na gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =250a 1 2.5 v drain-source o n-resistance (note 2) r ds(on) v gs =10v, i d =500ma 7 ? v gs =5v, i d =50ma 7 ? forw ard tranconductance (note 2) g fs v ds =10v, i d =200ma 80 ms diode forw ard voltage v sd i s =115ma, v gs = 0v 0.55 1.2 v dynami c characteristics (note 4) input capacitance c iss v ds =25v,v gs =0v,f =1mhz 50 pf output capacitance c oss 25 pf reverse transfer capac itance c rss 5 pf switching char acteristics (note 3,4) turn-on delay time t d(on) v gen =10v,v dd =25v,r l =50 ? i d =500ma,r g =25 ? 20 ns turn-off delay t ime t d(off ) 40 ns p-ch mosfet electrical characteristics(t a =25 unless otherwise noted) parameter symbol te st condition min typ max unit static ch aracteristics drain-source b reakdown voltage v (br)dss v gs = 0v, i d =-250 a -20 v zero gate voltage dra in current i dss v ds =-20v,v gs = 0v -1 a gate-body leakage curr ent i gss v gs =8v, v ds = 0v 100 na gate threshold voltage ( note 2) v gs(th) v ds =v gs , i d =-250a -0.4 -1 v drain-source o n-resistance (note 2) r ds(on) v gs =-4.5v, i d =-2.8a 90 112 m ? v gs =-2.5v, i d =-2a 110 142 m ? forw ard tranconductance (note 2) g fs v ds =-5v, i d =-2.8a 6.5 s diode forw ard voltage v sd i s =-0.7a, v gs = 0v -0.8 -1.2 v dynami c characteristics (note 4) input capacitance c iss v ds =-10v,v gs =0v,f =1mhz 405 pf output capacitance c oss 75 pf reverse transfer capac itance c rss 55 pf gate resistance r g f =1mhz 6 ? switching char acteristics (note 3,4) turn-on delay time t d(on) v gen =-4.5v,v dd =-10v,r l =10 i d =-1a,r g =1 ? 11 20 ns turn-on rise time t r 35 60 ns turn-off delay t ime t d(off ) 30 50 ns turn-off fall time t f 10 20 ns total gate charge q g v ds =-10v,v gs =-4.5v,i d =-3a 10 nc gate-source charge q gs 6 nc gate-drain charge q gd 0.7 nc notes : 1.surface mou nted on fr4 board using the minimum recommended pad size. 2. pulse test : pulse width=300 s, duty cycle 2%. 3. switching characteristics are indep endent of operating junction temperature. 4. graranted by design not subject to producting.
z z z f m h o h f f r p 3 c,jun,2016 7 \ s l f d o & k d u d f w h u l v w l f v ? 061 21 8 0 2 4 6 0246 0.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 012345 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 i d =50ma i d =500ma i d r ds(on) ?? t a =25 pulsed v gs r ds(on) ?? on-resist ance r ds ( o n) ( ) gate to source voltage v gs (v) t a =25 pulsed t a =25 pulsed transf er characteristics drain current i d (a) gate to source voltage v gs (v) 3e-3 2 t a =25 puls ed 0.3 0.03 v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs =5v v gs =10v,9v,8v,7v,6v v gs =4v v gs =3v outp ut characteristics drain current i d (a) drain to source voltage v ds (v) v gs =5v v gs =10v t a =25 pulsed on-resist ance r ds(on) ( ) drain current i d (a) n-channel characteristics
-0.0 -0.5 -1.0 -1 .5 -2.0 -2.5 -0 -2 -4 -6 -8 -10 -0 -2 -4 -6 -8 -10 30 60 90 120 150 -0 -2 -4 -6 -8 0 50 100 150 200 250 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 -0.2 -0.4 -0.6 -0.8 -1.0 -1 .2 -1e-3 -0.01 -0.1 -1 -10 transfer ch aracteristics drain current i d (a) gate to source voltage v gs (v) r ds(on) ?? v gs v gs =-4.5v v gs =-2.5v r ds(on) ?? i d o n - r esistance r ds(on) (m ) drain current i d (a) i d =-2.8a on-resistance r ds(on) (m ) gate to source voltage v gs (v) -3 -0.3 -3e-3 -0.03 t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed output characteristics v gs = -4.5v, -3.5v,-2.5v v gs =-2.0v v gs =-1.5v v gs =-1.0v drain current i d (a) drain to source voltage v ds (v) i s ?? v sd source current i s (a) source to drain voltage v sd (v) 7 \ s l f d o & k d u d f w h u l v w l f v p-channel characteristics z z z f m h o h f f r p 4 c,jun,2016
n1 n3 n6 n4 www.cj-elec.com 5 c,jun,2016
dfnwb2x2-6l tape and reel www.cj-elec.com 6 c,jun,2016
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