all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 10 rev. 02.1, 2013-08-28 PTAC260302SC thermally-enhanced high power rf ldmos fet 30 w, 28 v, 2620 ? 2690 mhz description the PTAC260302SC is a 30-watt ldmos fet intended for use in multi-standard cellular power ampli? er applications in the 2620 to 2690 mhz frequency band. this device integrates a 10-w (main) and a 20-w (peak) transistor, making it ideal for asymmetric doherty ampli? er designs. features include input matching, high gain and thermally- enhanced package with earless ? ange. manufactured with in? neon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. features ? asymmetrical design ? input matching ? wide video bandwidth ? typical cw performance, 2690 mhz, 28 v (doherty con? guration) - output power at p 3db = 31 w - ef? ciency = 56% - gain = 12 db ? typical single-carrier wcdma performance, 2690 mhz, 28 v (doherty con? guration) - output power = 37.5 dbm avg - gain = 15 db - ef? ciency = 45% - imd = ?29 dbc ? capable of handling 10:1 vswr at 30 v, 30 w (cw) output power ? integrated esd protection ? pb-free and rohs compliant rf characteristics single-carrier wcdma speci? cations (tested in in? neon doherty test ? xture) v dd = 28 v, v gs(peak) = 1.2 v, i dq = 85 ma, p out = 5.4 w avg, ? = 2620, 2655, and 2690 mhz wcdma signal: 3gpp, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit linear gain g ps 14 15 ? db drain efficiency d 41 43 ? % adjacent channel power ratio acpr ? ?27.5 ?25.5 dbc 15 25 35 45 55 -40 -35 -30 -25 -20 29 31 33 35 37 39 41 drain efficiency(%) acp up, acp low (dbc) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 85 ma, 3gpp wcdma signal, 10.3 db par, 3.84 mhz bandwidth 2620 mhz 2655 mhz 2690 mhz efficiency acp up acp low c260302sc_gr1 PTAC260302SC package h-37248h-4 (formed leads)
PTAC260302SC data sheet 2 of 10 rev. 02.1, 2013-08-28 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1 a v ds = 63 v, v gs = 0 v i dss ? ? 10 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.8 ? on-state resistance (peak) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.6 ? operating gate voltage (main) v ds = 28 v, i dq = 0.085 a v gs ? 2.7 ? v operating gate voltage (peak) v ds = 28 v, i dq = 0 a v gs ? 1.2 ? v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 200 c storage temperature range t stg ?65 to +150 c thermal resistance (t case 70c, 30 w cw) r jc 1.67 c/w ordering information type and version order code package and description shipping PTAC260302SC v1 r250 PTAC260302SCv1r250xtma1 h-37248h-4 ? ceramic open-cavity, earless ? ange, formed leads tape & reel, 250 pcs
data sheet 3 of 10 rev. 02.1, 2013-08-28 PTAC260302SC typical performance (data taken in an infineon gull-wing applications circuit) 15 20 25 30 35 40 45 50 55 60 10 11 12 13 14 15 16 17 18 19 30 32 34 36 38 40 42 44 46 efficiency (%) gain (db) output power (dbm) cw performance at selected v dd i dq = 85 ma, ? = 2690 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency c260302sc_gr5 15 20 25 30 35 40 45 50 55 60 10 11 12 13 14 15 16 17 18 19 30 32 34 36 38 40 42 44 46 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 85 ma, series show frequency efficiency gain 2620 mhz 2655 mhz 2690 mhz c260302sc_gr2 15 20 25 30 35 40 45 50 55 60 10 11 12 13 14 15 16 17 18 19 30 32 34 36 38 40 42 44 46 efficiency (%) gain (db) output power (dbm) cw performance at selected v dd i dq = 85 ma, ? = 2620 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency c260302sc_gr3 20 25 30 35 40 45 50 55 60 65 10 11 12 13 14 15 16 17 18 19 30 32 34 36 38 40 42 44 46 efficiency (%) gain (db) output power (dbm) cw performance at selected v dd i dq = 85 ma, ? = 2655 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency c260302sc_gr4
PTAC260302SC data sheet 4 of 10 rev. 02.1, 2013-08-28 typical performance (cont.) -16 -15 -14 -13 -12 -11 -10 12.0 12.5 13.0 13.5 14.0 14.5 15.0 2490 2545 2600 2655 2710 2765 2820 input return loss (db) gain (db) frequency (mhz) small signal cw performance v dd = 28 v, i dq = 85 ma irl gain c 260302sc_gr6 5 6 7 8 9 10 11 12 13 14 15 16 17 18 29 31 33 35 37 39 41 opar (db) gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 85 ma, ? = 2620 mhz 3gpp wcdma signal, 3.84 mhz bw gain par @ 0.01% ccdf c 260302sc_gr7 5 6 7 8 9 10 11 12 13 14 15 16 17 18 29 31 33 35 37 39 41 opar (db) gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 85 ma, ? = 2655 mhz 3gpp wcdma signal, 3.84 mhz bw gain par @ 0.01% ccdf c260302sc_gr8 5 6 7 8 9 10 11 12 13 14 15 16 17 18 29 31 33 35 37 39 41 opar (db) gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 85 ma, ? = 2690 mhz 3gpp wcdma signal, 3.84 mhz bw gain par @ 0.01% ccdf c260302s c_gr9
data sheet 5 of 10 rev. 02.1, 2013-08-28 PTAC260302SC typical performance (cont.) -18 -16 -14 -12 -10 -8 7 9 11 13 15 17 2580 2610 2640 2670 2700 2730 input return loss (db) gain (db), opar (db) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 85 ma, p out = 37.5 dbm, 3gpp wcdma signal opar gain irl c260302sc_gr10 37 39 41 43 45 47 -35 -31 -27 -23 -19 -15 2580 2610 2640 2670 2700 2730 efficiency (%) acp r (dbc) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 85 ma, p out = 37.5 dbm, 3gpp wcdma signal, 10.3 db par efficienc y a cp u p a cp low c260302sc_gr11
PTAC260302SC data sheet 6 of 10 rev. 02.1, 2013-08-28 load pull performance main side ? pulsed cw signal: 16 sec, 10% duty cycle; 28 v, 85 ma p 1db max output power max pae freq [mhz] zs zl gain [db] p out [dbm] p out [w] pae % zl gain [db] p out [dbm] p out [w] pae % 2620 25 ? j29 9.3 ? j14.4 19.5 42.23 16.7 59.1 5.5 ? j11.9 21.3 40.89 12.3 65.2 2655 42 ? j33 12.1 ? j14.1 19.2 42.30 17.0 56.7 6.8 ? j12.2 20.8 41.40 13.8 64.6 2690 44 ? j35 11.9 ? j15.0 20.1 42.03 16.0 56.5 7.1 ? j12.0 21.8 41.03 12.7 62.7 peak side ? pulsed cw signal: 16 sec, 10% duty cycle; 28 v, 115 ma p 1db max output power max pae freq [mhz] zs zl gain [db] p out [dbm] p out [w] pae % zl gain [db] p out [dbm] p out [w] pae % 2620 36 ? j41 10.5 ? j17.4 19.1 42.23 21.5 55.7 6.5 ? j13.7 20.8 42.02 15.9 62.5 2655 43 ? j31 10.7 ? j17.5 18.7 42.30 21.5 55.2 6.3 ? j15.8 20.2 42.39 17.3 61.2 2690 55 ? j33 11.9 ? j18.9 18.9 42.03 20.6 53.0 6.9 ? j16.0 20.5 42.15 16.4 59.5 z source z load g d g s d reference circuit, tuned for 2690 mhz dut PTAC260302SC reference fixture part no. lta/PTAC260302SC v1 pcb rogers 4350, 0.762 mm [.030"] thick, 2 oz. copper, r = 3.66 find gerber ? les for this test ? xture on the in? neon web site at ( http://www.in? neon.com/rfpower )
data sheet 7 of 10 rev. 02.1, 2013-08-28 PTAC260302SC component information component description suggested manufacturer p/n input c101, c103, c106, c107 chip capacitor, 10 pf atc atc100a100jw150xb c102, c104 capacitor, 10 f, 50 v pf panasonic electronic components eev-hd1h100p c105, c108 chip capacitor, 1 f murata electronics grm21br71h105ka12l r102 resistor, 1 k ohm panasonic electronic components erj-8geyj102v r103 resistor, 50 ohm anaren c16a50z4 r104, r105, r106, r107 resistor, 10 ohm panasonic electronic components erj-3geyj100v s1 hybrid coupler anaren x3c25p1_05s output c201, c203 capacitor, 100 f, 35 v pf panasonic electronic components eee-fp1v101ap c202, c204 capacitor, 10 pf taiyo yuden umk325c7106mm-t c205, c206, c207, c208 chip capacitor, 10 pf atc atc100a100jw150xb reference circuit (cont.) reference circuit assembly diagram (not to scale) rf_out c202 c104 r104 s1 c201 ptac260302s_d_in_02 rf_in c107 c101 c260302sc_cd_3-28-13 r102 r107 c102 v dd v dd c206 ptac260302s_d v gs main v gs peak r04350, 030 (61) out_01 r04350 030 (105) r103 r106 r105 c108 c204 c205 c203 c208 c207 c106 r101 c103 c105 PTAC260302SC
PTAC260302SC data sheet 8 of 10 rev. 02.1, 2013-08-28 g1 g2 d1 d2 s (flange) main peak h-xx248-hgf-4_d_pd-a_3-28-13 pinout diagram (top view) lead connections for PTAC260302SC pin description d1 drain peak d2 drain main g1 gate peak g2 gate main s source
data sheet 9 of 10 rev. 02.1, 2013-08-28 PTAC260302SC package outline specifications package h-37248h-4 (formed leads) diagram notes?unless otherwise speci? ed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless speci? ed otherwise. 4. pins: d1, d2 ? drains; g1, g2 ? gates; s ? source. 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. ( find the latest and most complete information about products and packaging at the in? neon internet page ( http://www.in? neon.com/rfpower ) 6 ' & / ; ? ? ? ; ? > ? @ 6 3 + > @ ? > ? @ ? > ? @ ? > ? @ > @ ? > ? @ > @ ; 5 > 5 @ & / & / ; > @ ; > @ > @ > @ ; ? [ > @ > @ * * ' ' + + b * : b s r b b
we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: ( highpowerrf@in? neon.com ) to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international PTAC260302SC v1 page subjects (major changes since last revision) data sheet 10 of 10 rev. 02.1, 2013-08-28 edition 2013-08-28 published by in? neon technologies ag 85579 neubiberg, germany ? 2012 in? neon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, in? neon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest in? neon technologies of? ce ( www.in? neon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest in? neon technologies of? ce. in? neon technologies components may be used in life-support devices or systems only with the express written approval of in- ? neon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support devic e or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. revision history: 2013-08-28 data sheet previous version: 2012-04-08, data sheet 2 product type updated.
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