? design assistance ? assembly assistance ? die handling consultancy ? hi - rel die qualification ? hot & cold die probing ? electrical test & trimming ? customised pack sizes / qtys ? support for all industry recognised ? 100% visual inspection contact baredie@micross.com for price, delivery and to place orders HMC258 supply formats: o waffle pack o gel pak o tape & reel ? onsite storage, stockholding & scheduling ? on - site failure analysis ? bespoke 24 hour monitored storage systems for secure long term product support o mil - std 883 condition a o mil - std 883 condition a ? on - site failure analysis www.analog.com www.micross.com
analog devices welcomes hittite microwave corporation no content on the attached documen t has changed www.analog.com www.hittite.com
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mixers - sub-harmonic - chip 3 3 - 8 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC258 v03.1007 general description features functional diagram integrated lo amplifi er: 0 dbm drive sub-harmonically pumped (x2) lo high 2lo/rf isolation: 40 db die size: 0.85 x 1.15 x 0.1 mm electrical specifi cations, t a = +25 c, lo drive = 0 dbm typical applications the HMC258 is ideal for: ? microwave point-to-point radios ? vsat ? satcom the HMC258 chip is a compact sub-harmonically pumped (x2) single ended mmic mixer with an integrated lo amplifi er which can be used as an upconverter or downconverter. the chip utilizes a gaas mesfet technology that results in a small overall chip area of 0.9mm 2 . the 2lo to rf isolation is excellent eliminating the need for additional fi l- tering. the lo amplifi er is a single bias (+5v) two stage design with only 0 dbm drive requirement. a less stringent oscillator design is made possible by the low lo drive and sub-harmonic nature of the chip. all data is with the chip in a 50 ohm test fi xture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). gaas mmic sub-harmonically pumped mixer, 14 - 21 ghz parameter if = 1 ghz vdd = +5.0v if = 1 ghz vdd = +5.0v units min. typ. max. min. typ. max. frequency range, rf 14 - 21 17 - 20 ghz frequency range, lo 7 - 10.5 8.5 - 10 ghz frequency range, if dc - 3 dc - 3 ghz conversion loss 10 13.5 9.5 12 db noise figure (ssb) 10 13.5 9.5 12 db 2lo to rf isolation 30 40 34 40 db 2lo to if isolation 30 40 ~ 50 38 40 ~ 50 db ip3 (input) 0 7 0 7 dbm 1 db compression (input) -5 0 -4 1 dbm supply current (idd) 50 67 50 67 ma
mixers - sub-harmonic - chip 3 3 - 9 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = 0 dbm upconverter performance conversion gain vs. lo drive return loss @ lo = 0 dbm isolation @ lo = 0 dbm conversion gain vs. lo drive if bandwidth @ lo = 0 dbm -25 -20 -15 -10 -5 0 13 14 15 16 17 18 19 20 21 22 23 +25 c -55 c +85 c conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 13 14 15 16 17 18 19 20 21 22 23 -4 dbm -2 dbm 0 dbm +2 dbm +4 dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 0123456 if conversion gain (db) if frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 if rf lo return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 13 14 15 16 17 18 19 20 21 22 23 conversion gain (db) rf frequency (ghz) -2 dbm -4 dbm +2 dbm +4 dbm 0 dbm -60 -50 -40 -30 -20 -10 0 13 14 15 16 17 18 19 20 21 22 23 2 lo/if lo/rf lo/if 2 lo/rf rf/if isolation (db) rf frequency (ghz) HMC258 v03.1007 gaas mmic sub-harmonically pumped mixer, 14 - 21 ghz
mixers - sub-harmonic - chip 3 3 - 10 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip3 vs. temperature @ lo = 0 dbm input ip2 vs. temperature @ lo = 0 dbm input ip3 vs. lo drive mxn spurious outputs @ lo drive = 0 dbm p1db vs. temperature @ lo = 0 dbm input ip2 vs. lo drive nlo mrf 5 4 3 2 1 0 -3 -2 -44 -1 -57 -18 -52 0-9-26+20 1x-46-2 2-52-30-49 3-56 rf = 18 ghz @ -10 dbm lo = 8.5 ghz @ 0 dbm all values in dbc below the if power level 20 25 30 35 40 45 50 55 60 13 14 15 16 17 18 19 20 21 22 23 -55 c +25 c +85 c ip2 (dbm) rf frequency (ghz) 20 25 30 35 40 45 50 55 60 13 14 15 16 17 18 19 20 21 22 23 +2 dbm 0 dbm -2 dbm ip2 (dbm) rf frequency (ghz) -10 -5 0 5 10 15 20 13 14 15 16 17 18 19 20 21 22 23 -55 c +25 c +85 c ip3 (dbm) rf frequency (ghz) -10 -5 0 5 10 15 20 13 14 15 16 17 18 19 20 21 22 23 -2 dbm 0 dbm +2 dbm ip3 (dbm) rf frequency (ghz) -4 -2 0 2 4 6 13 14 15 16 17 18 19 20 21 22 23 +25 c -55 c +85 c p1db (dbm) rf frequency (ghz) HMC258 v03.1007 gaas mmic sub-harmonically pumped mixer, 14 - 21 ghz
mixers - sub-harmonic - chip 3 3 - 11 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings note: a 100pf single layer chip bypass capacitor is recommended on the vdd port no further than 0.762 mm (30 mils) from the HMC258 rf / if input (vdd = +5v) +13 dbm lo drive (vdd = +5v) +13 dbm vdd +10 vdc storage temperature -65 to +150 c operating temperature -55 to +85 c HMC258 v03.1007 gaas mmic sub-harmonically pumped mixer, 14 - 21 ghz pad number function description interface schematic 1vdd power supply for the lo amplifi er. an external rf bypass capacitor of 100 - 330 pf is required. a mim border capacitor is recommended. the bond length to the capacitor should be as short as possible. the ground side of the capacitor should be connected to the housing ground. 2if this pad is dc coupled and should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. any applied dc voltage to this pin will result in die non-function and pos- sible die failure. 3rf this pad is ac coupled and matched to 50 ohm. 4lo this pad is ac coupled and matched to 50 ohm. pad descriptions electrostatic sensitive device observe handling precautions
mixers - sub-harmonic - chip 3 3 - 12 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC258 v03.1007 gaas mmic sub-harmonically pumped mixer, 14 - 21 ghz outline drawing notes: 1. all dimensions are in inches [mm]. 2. bond pads are .004 square. 3. typical bond pad spacing center to center is .006. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. die packaging information [1] standard alternate wp-8 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
mixers - sub-harmonic - chip 3 3 - 13 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. the photo in fi gure 3 shows a typical assembly for the HMC258 mmic chip. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature o f 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab figure 3: typical HMC258 assembly HMC258 v03.1007 gaas mmic sub-harmonically pumped mixer, 14 - 21 ghz
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