2011. 3. 18 1/3 semiconductor technical data KTB817B triple diffused pnp transistor revision no : 0 high power amplifier application. features h complementary to ktd1047b. h recommended for 60w audio frequency amplifier output stage. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) note : h fe (1) classification o:60 q 120, y:100 q 200 characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -6 v collector current dc i c -12 a pulse i cp -15 collector power dissipation (tc=25 ? ) p c 100 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-80v, i e =0 - - -0.1 ma emitter cut-off current i ebo v eb =-4v, i c =0 - - -0.1 ma dc current gain h fe (1) (note) v ce =-5v, i c =-1a 60 - 200 h fe 2 v ce =-5v, i c =-6a 20 - collector-emitter saturation voltage v ce(sat) i c =-5a, i b =-0.5a - - -2.5 v base-emitter voltage v be v ce =-5v, i c =-1a - - -1.5 v transition frequency f t v ce =-5v, i c =-1a - 15 - mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz - 300 - pf turn on time t on v cc =-20v i c =1a=10 h i b1 =-10 h i b2 r l =20 ? - 0.25 - s fall time t f - 0.53 - storage time t stg - 1.61 - downloaded from: http:///
2011. 3. 18 2/3 KTB817B revision no : 0 downloaded from: http:///
2011. 3. 18 3/3 KTB817B revision no : 0 downloaded from: http:///
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