2011. 12. 22 1/4 semiconductor technical data KMA2D4P20SA p-ch trench mosfet revision no : 3 general description it s mainly suitable for use as a load switch in battery powered applications. features h v dss =-20v, i d =-2.4a. h drain to source on-state resistance. : r ds(on) =100m ? (max.) @ v gs =-4.5v. : r ds(on) =175m ? (max.) @ v gs =-2.5v. maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q type name lot no. kb2 marking note1)surface mounted on 1 u ? 1 u fr4 board, t ? 5sec. pin connection (top view) 2 3 1 gs d 1 2 3 characteristic symbol rating unit drain to source voltage v dss -20 v gate to source voltage v gss ? 12 v drain current dc@ta=25 ? (note1) i d -2.4 a pulsed (note1) i dp -9 drain power dissipation ta=25 ? (note1) p d 1.25 w ta=100 ? (note1) 0.6 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient (note1) r thja 100 ? /w downloaded from: http:///
2011. 12. 22 2/4 KMA2D4P20SA revision no : 3 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =-250 a -20 - - v drain cut-off current i dss v gs =0v, v ds =-20v - - -1 a v gs =0v, v ds =-16v, tj=70 ? - - -5 gate to source leakage current i gss v gs = ? 12v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =-250 a -0.6 - -1.5 v drain to sourcesource on resistance r ds(on) v gs =-4.5v, i d =-2.4a (note2) - 83 100 m ? v gs =-2.5v, i d =-1.8a (note2) - 145 175 on state drain current i d(on) v gs =-4.5v, v ds =-5v (note2) -9 - - a forward transconductance g fs v ds =-5v, i d =-2.4a (note2) - 4 - s dynamic input capacitance c iss v ds =-15v, f=1mhz, v gs =0v - 292 - pf output capacitance c oss - 60 - reverse transfer capacitance c rss - 33 - total gate charge q g v ds =-15v, i d =-2.4a, v gs =-4.5v (note2) - 4 - nc gate to source charge q gs - 0.6 - gate to drain charge q gd - 1.4 - turn-on delay time t d(on) v dd =-15v, v gs =-4.5v , i d =-2.4a, r g =6 ? (note2) - 6.5 - ns turn-on rise time t r - 13 - turn-off delay time t d(off) - 15 - turn-off fall time t f - 20 - source-drain diode ratings continuous source current i s - - - -2.4 a pulsed source current i sp - (note2) - - -9 a source to drain forward voltage v sd v gs =0v, i s =-2.4a (note2) - - -1.3 v note2) pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2011. 12. 22 3/4 KMA2D4P20SA revision no : 3 gate to source voltage v gs (v) 0 - 1 - 3 - 2 - 5 - 4 fig3. i d - v gs fig5. v th - t j -75 - 50 - 25 -0.4-0.2 -0.8-0.6 -1.2-1.0 -1.4 -1.6 05 0 25 100 175 150 75 125 drain current i d (a) tj=150 c tj = -55 c tj=25 c threshold voltage v th (v) junction temperature t j ( ) c fig1. i d - v ds drain to source voltage v ds (v) 0 0 -10 - 6 - 8 - 4 - 2 0 -10 - 6 - 8 - 4 - 2 - 1.0 - 0.5 - 1.5 - 3.0 - 2.0 - 2.5 drain current i d (a) v gs = - 1.5 v - 2.0v -3.0v -4.5v - 2.5v -3.5v fig2. r ds(on) - i d fig4. r ds(on) - t j fig6. i s - v sd -0.2 -0.4 -0.1 -1 -0.01 -10 -0.6 -1 -1.2 -0.8 0 0 8040 200160 120 0 -6 - 4 - 8 -10 -2 25 -25 50 -75 -50 100 175 125 150 75 v gs = - 2.5v v gs = - 4.5v 200 0 40 80 120 160 drain current i d (a) reverse drain current i s (a) junction temperture t j ( ) source to drain forward voltage v sd (v) c t j =25 c v gs = v ds i d = - 250 a -4.0v v ds = v gs tj=25 c tj=-55 c tj=150 c drain to source on resistance r ds(on) (m ) drain to source on resistance r ds(on) (m ) v gs = -4.5v, i d = - 2.4 v gs = -2.5v, i d = - 1.8 downloaded from: http:///
2011. 12. 22 4/4 KMA2D4P20SA revision no : 3 downloaded from: http:///
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