2007. 9. 10 1/2 semiconductor technical data kdz5.6cf revision no : 1 zener diode silicon epitaxial planar diode constant voltage regulation application. features h small package : tfsc h normal voltage tolerance about ? 2% maximum rating (ta=25 ? ) tfsc dim millimeters a bc d e 1.00 0.05 0.80+0.10/-0.05 0.60 0.050.30 0.05 0.40 max cathode mark c d b 1 2 a e f 0.13 0.05 f + _ + _ + _ + _ 1. anode2. cathode characteristic symbol rating unit power dissipation p d * 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? type name marking zm * mounted on a glass epoxy circuit board of 20 ? 20 x , pad dimension of 4 ? 4 x . characteristic symbol test condition min. typ. max. unit zener voltage v z i z =5ma 5.490 - 5.730 v dynamic impedance z z i z =5ma - - 60 ? knee dynamic impedance z zk i z =0.5ma - - 200 ? reverse current i r v r =2.5v - - 1 a total capacitance c t v r =0.5v, f=1mhz - - 25 pf v r =2.5v, f=1mhz - - 19 electrical characteristics (ta=25 ? ) downloaded from: http:///
2007. 9. 10 2/2 kdz5.6cf revision no : 1 power dissipation p d (mw) zener current i z (ma) i z - v z p d - ta 0 0 50 100 150 200 2 4 6 8 10 0 50 100 150 200 ambient temperature ta ( c) * mounted on a glass epoxy circuit board of 20 x 20mm pad dimension of 4 x 4mm zener voltage v z (v) total capacitance (pf) c t - v r reverse voltage v r (v) 01 345 2 15 20 25 30 0 5 10 2 01 34567 downloaded from: http:///
|
