jiangsu changjiang electronics technology co., l td sop8 plastic-encapsulate mosfets CJQ4822 dual n-channel mosfet description the CJQ4822 uses advan ced trench te chnology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain cu rrent (t 10s ) (note 1) i d 8.5 a pulsed drain cu rrent (note 2) i dm 30 a power dissi pation p d 1.4 w thermal resistance from junction to ambie nt (t 10s ) (note 1) r ja 89 /w junction temperature t j 150 storage temperature t stg -55~+150 v (br)dss r ds(on) max i d 30 v 16 m @ 10 v ? 8.5 a ? 26 m 4.5 v ? @ sop8 marking: equivalent circuit www.cj-elec.com 1 e , ma r ,201 6 solid dot = green molding compound device, if none,the normal device. q4822 = device code yy =dat e code soli d dot = pin1 indicator
parameter symbol te st condition min typ max unit static p arameters drain-source b reakdown voltage v (br)dss v gs = 0v, i d =250a 30 v zero gate voltage dra in current i dss v ds =24v,v gs = 0v 1 a gate-body leakage curr ent i gss v gs =20v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 1.25 3 v v gs =10v, i d =8.5a 11 16 m ? drain-source o n-resistance (note 3) r ds(on) v gs =4.5v, i d =6a 13 26 m ? forwa rd tranconductance (note 3) g fs v ds =5v, i d =8.5a 20 s diode forw ard voltage (note 3) v sd i s =1a, v gs = 0v 1 v dynami c parameters (note 4) input capacitanc e c iss 1250 pf output capacitance c oss 180 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 110 pf switching param eters (note 4) turn-on delay time t d(on) 7.5 ns turn-on rise time t r 6.5 ns turn-off delay t ime t d(off ) 25 ns turn-off fall time t f v gs =10v,v ds =15v, r l =1.8 ? ,r gen =3 ? 5 ns total gate charge (10v) 23 nc total gate charge (4.5v) q g 11.2 nc gate-source charge q gs 2.6 nc gate-drain charge q gd v ds =15v,v gs =10v,i d =8.5a 4.2 nc notes : 1. the value of r ja is measure with the device mounted on 1in 2 fr-4 board wi th 2oz. copper, in a still air environment with t a =25 . the valu e in any given application depends on the user ?s specific board design. the current rating is based on the t 10s thermal resistance rating. 2. repetitive rating : pulse width limited by junction temperature. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not s ubject to production testing. 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified www.cj-elec.com 2 e,mar,2016
0123 0 4 8 12 16 20 01234 0 3 6 9 12 15 18 0.5 0.6 0.7 0.8 0.9 1 .0 0.1 1 10 02468 1 0 0 20 40 60 0 5 10 15 20 0 6 12 18 24 30 25 50 75 100 125 0.8 0.9 1.0 1.1 1.2 1.3 ta=25 pulsed 4v 3v 3.5v 2.5v v gs =2v drain current i d (a) drain to source voltage v ds (v) out put characteristics t a =25 v ds =5v pulsed tran sfer characteristics drain current i d (a) gate to source voltage v gs (v) ta=25 pulsed v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs r ds(on) ?? on- resistance r ds(o n) (m ) gate to source voltage v gs (v) ta=25 pulsed i d =6a ta=25 pulsed on- resistance r ds(o n) (m ) drain current i d (a) vgs= 4.5v vgs=10v ?? i d r ds(on) i d =250ua thre shold voltage threshold vo ltage v th (v) junction temperature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 e,mar,2016
sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069 www.cj-elec.com 4 e,mar,2016
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