^zmi-l.onau.cto'i , u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n np n r f transisto r bfr52 0 descriptio n ? hig h powe r gai n ? hig h curren t gai n bandwidt h produc t ? lo w nois e figur e application s ? designe d fo r r f fronten d i n wideban d application s i n th e gh z range.suc h a s analo g an d digita l cellula r telephones , cordless . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce s veb o i c p c t j t st g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r powe r dissipatio n @t c =25 c junctio n temperatur e storag e temperatur e rang e valu e 2 0 1 5 2.5 7 0 0. 3 17 5 -65-15 0 uni t v v v m a w ' c c ^ ^ sot - 2 3 packag e -h, m ^?11 1 f t l markin g b c 4 i li ' i u:^ l 1 i* d * i l 6 - | / \ l p n t 1 l 1 : bas e ~ ? emitte r 3 ; collecto r - 1 l_ l 1 1 . i - = j | m l di m a b c d il - k k l m 1 l m m mi n 0 . 3 7 1,1 9 2 . 1 0 0.8 9 1 . 7 8 2.6 5 1 . 1 0 0 . -! 5 0.07 6 ma x 0.5 1 1 . 1 0 2,5 0 1.0 5 2.0 5 3.0 5 1.2 0 0.6 1 0 . it s m 4 n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n r f transisto r bfr52 0 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l icb o hf e f i co b p g p g 1 s 21 e i 2 n f n f paramete r collecto r cutof f curren t d c curren t gai n current-gai n bandwidt h produc t outpu t capacitanc e powe r gai n powe r gai n insertio n powe r gai n nois e figur e nois e figur e condition s v cb = 6v ; i e = 0 lc = 20m a ; v c e = 6 v lc = 20m a ; v ce = 6v ; f = 1gh z i e = 0 ; v gb = 6v ; f = 1 mh z l c = 20m a ; v ce = 6v ; f = 900mh z l c = 20m a ; v ce = 6v ; f = 2gh z l c = 20m a ; v ce = 6v ; f = 900mh z l c = 5m a ; vce = 6v ; f = 900mh z lc = 20m a ; v ce = 6v ; f = 900mh z mi n 6 0 1 3 typ . 9 0. 5 1 5 9 1 4 1. 1 1. 6 ma x 0.0 5 25 0 1. 6 2. 1 uni t n a gh z p f d b d b d b d b d b 40 0 p to t (mw j 30 0 20 0 10 0 \0 10 0 150t s ( c 'c)20 0 powe r deratin g curv e 25 0 20 0 15 0 10 0 5 0 0"- ^ v ce =6 v 1 0 l c (ma) 10 2 d c curren t gai n a s a functio n o f collecto r curren t downloaded from: http:///
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