b-70 01/99 U430, u431 dual n-channel silicon junction field-effect transistor balanced mixers differential amplifiers absolute maximum ratings at t a = 25?c. total device dissipation (derate 4 mw/c to150c) 500 mw storage temperature range C 65c to +150c lead temperature 300c toe78 package dimensions in inches (mm) pin configuration 1 source 1, 2 gate 1, drain 1, 4 case, 5 drain 2, 6 gate 2, 7 source 2, 8 omitted at 25c free air temperature: U430 u431 process nj72 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1a, v ds = ? v gate reverse current i gss C 150 C 150 pa v gs = C 15 v, v ds = ? v C 150 C 150 na v gs = C 15 v, v ds = ? v t a = 150c gate source cutoff voltage v gs(off) C 1C 4C 2C 6vv ds = 10 v, i d = 1 na gate source forward voltage v gs(f) 11vv ds = ? v, i g = 10 ma drain saturation current (pulsed) i dss 12 30 24 60 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common source forward g fs 10 17 10 17 ms v ds = 10 v, i d = 10 ma f = 1 khz transconductance 12 12 ms v ds = 10 v, i d = 10 ma f = 100 mhz common source output conductance g os 250 250 s v ds = 10 v, i d = 10 ma f = 1 khz 0.15 0.15 s v ds = 10 v, i d = 10 ma f = 100 mhz drain gate capacitance c dg 55pfv ds = ? v, v gs = C 10 v f = 1 mhz source gate capacitance c gs 2.5 2.5 pf v ds = ? v, v gs = C 10 v f = 1 mhz equivalent short circuit e n 10 10 nv/ hz v ds = 10 v, i d = 10 ma f = 100 khz input noise voltage power match source admittance g ig 12 12 v ds = 10 v, i d = 10 ma f = 100 mhz conversion gain g c 33db v ds = 20 v, r l = 2 k f = 100 mhz v gs = 1/2 v gs(off) saturation drain current ratio i dss1 /i dss2 0.9 1 0.9 1 v ds = 10 v, v g = ? v gate source cutoff voltage ratio v gs(off)1 0.9 1 0.9 1 v ds = 10 v, i d = 1 na v gs(off)2 transconductance ratio g fs1 /g fs2 0.9 1 0.9 1 v ds = 10 v, i d = 10 ma 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-70
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