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! " # $ % $ ! ! & ! '() ! * ! % ! $ ! # ("++, * " ! -, !# ! ! * ("++, $ ! # s d g ! "#$ % & '( () $ " * + ) ",$-+". / 01 ,$- + 2 ,,$-+". 01 ,& 3 2$ ,.,& % & 4 "1$ ( 56 ) "02" ) "07 $ 8%9007 0$: ; " <9( ; =7> 8%?>0: 2 1$ ( ( @@@ %6 2 ( () 3#')7$ % @@@ & 2 1$ ( (0= @@@ 9 .)) .)/ 0 ? . t o -22 0 ab !" && #$ ) $ ;4 )#+.0= 8a . : @@@ @@@ - "- ) $ ", 8a . : @@@ @@@ (b$ % # " @@@ @@@ % 2,2$ ,. 0 @@@ 9 / c 2,2$ ,. -" @@@ % % d &&d s d g ( () $a3 " @@@ @@@ d ? ? a3 "0% 77 $ @@@ %6 @@@ & 27$ 0 2 ) $ ( () $4 (2 $ @@@ @@@ % ? '-- " % @@@ % d " # $ $$ / @@@ @@@ ) @@@ @@@ d @@@ @@@ '( () $# !3" @@@ @@@ '( () $2,!3" @@@ @@@ ( ( c ' -" @@@ @@@ c '( () $ -" @@@ @@@ 6 c '( ( 8e; e: -" @@@ @@@ /f )# "%9 (4. 0 @@@ @@@ 6 2 0 @@@ @@@ (477. 0 @@@ 6 @@@ 2 % ? # 0 @@@ 9/ @@@ 2 % ?, )# "% a @@@ @@@ 9008% %: 7 0$3" $ 7 $ $ $ $ @@@ @@@ 4 $ $ @@@ 9 @@@ # 2,7 $ $ @@@ @@@ g%;hi)# "% h ! " # $ % ! $$ ! ) $$$ @@@ @@@ s d g % 6% ( () $!3" 2 , "j - 0 =. 0k%b$ 0%8)7 "%: i sd & f&d 6 " !%0h 2 ? %8)# ": - dj.$.$ l% ! 10 100 1000 1 10 100 20us pulse width t = 25 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.5v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 1 10 100 20us pulse width t = 175 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.5v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) o v = i = gs d 10v 37a 10 100 1000 4 5 6 7 8 9 10 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j " #$ ! %& ' % ' $ % $ % $ ( ) % 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j o t = 175 c j o 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c o o v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms $) % v ds 90% 10% v gs t d(on) t r t d(off) t f $) %* +! 1 ! 0.1 % 2 2 %m%% + - " #,!!+ - ./ " # 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 01 ' % 2 ' %* +! " #&+ ,% 3 -+* +! 3 -+ t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 9.0a 16a 22a p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ( 4,5(,$ 6 7 ! " $!,, $ 2 ? ,&$ =.2 ? ,0.%m%% ? $ =..#$ ee ? %m%%(, $m $ !. ? ! ).$$ ? ' ? ! !3"$$ 7 0 6 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an ir f1010 lot code 1789 as s e mb le d on ww 19, 1997 part number assembly lot code dat e code ye ar 7 = 1997 line c week 19 logo rectifier int e r nat ional note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/04 note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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