irli2203n preliminary hexfet ? power mosfet pd - 9.1378a s d g v dss = 30v r ds(on) = 0.007 i d = 61a l logic-level gate drive l advanced process technology l isolated package l high voltage isolation = 2.5kvrms ? l sink to lead creepage dist. = 4.8mm l fully avalanche rated to-220 fullpak fifth generation hexfets from international rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. the moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. this isolation is equivalent to using a 100 micron mica barrier with standard to-220 product. the fullpak is mounted to a heatsink using a single clip or by a single screw fixing. 11/1/96 description parameter typ. max. units r jc junction-to-case CCC 3.2 r ja junction-to-ambient CCC 65 thermal resistance parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 61 i d @ t c = 100c continuous drain current, v gs @ 10v 43 a i dm pulsed drain current ?? 400 p d @t c = 25c power dissipation 47 w linear derating factor 0.31 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ?? 390 mj i ar avalanche current ?? 60 a e ar repetitive avalanche energy ? 4.7 mj dv/dt peak diode recovery dv/dt ?? 1.2 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings c/w downloaded from: http:///
irli2203n parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.035 CCC v/c reference to 25c, i d = 1ma ? CCC CCC 0.007 v gs = 10v, i d = 37a ? CCC CCC 0.01 v gs = 4.5v, i d = 31a ? v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 47 CCC CCC s v ds = 25v, i d = 60a ? CCC CCC 25 a v ds = 30v, v gs = 0v CCC CCC 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 110 i d = 60a q gs gate-to-source charge CCC CCC 31 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC CCC 57 v gs = 4.5v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 15 CCC v dd = 15v t r rise time CCC 210 CCC ns i d = 60a t d(off) turn-off delay time CCC 29 CCC r g = 1.8 , v gs = 4.5v t f fall time CCC 54 CCC r d = 0.25 , see fig. 10 ?? between lead,6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 3500 CCC v gs = 0v c oss output capacitance CCC 1400 CCC v ds = 25v c rss reverse transfer capacitance CCC 690 CCC ? = 1.0mhz, see fig. 5 ? c drain to sink capacitance CCC 12 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss nh l s internal source inductance CCC 7.5 CCC l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current s d g pf source-drain ratings and characteristics notes: ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? v dd = 15v, starting t j = 25c, l = 220h r g = 25 , i as = 60a. (see figure 12) ? i sd 60a, di/dt 140a/s, v dd v (br)dss , t j 175c ? t=60s, ?=60hz ? uses irl2203n data and test conditions ? pulse width 300s; duty cycle 2%. rev. # parameters old spec. new spec. comments revision date 1v gs(th) (max.) 2.5v no spec. removed v gs(th) max. specification 11/1/96 1v gs (max.) 20 16 decrease v gs max. specification 11/1/96 specification changes s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 37a, v gs = 0v ? t rr reverse recovery time CCC 94 140 ns t j = 25c, i f = 60a q rr reverse recoverycharge CCC 280 410 c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) a 61 400 downloaded from: http:///
irli2203n fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bott om 2.5v 2.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bott om 2.5v 2.5v j 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t = 25c j gs v , gate-to-source voltage (v) d i , d rain -to-sou rce curren t (a) t = 175c j a v = 1 5 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction tem perature (c) r , drain-to-source on resistance ds (on ) (norm alized) v = 10v gs a i = 100 a d downloaded from: http:///
irli2203n fig 6. typical gate charge vs. gate-to-source voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2000 4000 6000 8000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0 v, f = 1m hz c = c + c , c sho rte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 3 6 9 12 15 0 30 60 90 120 150 q , total gate charge (nc) g v , g ate-to-source voltage (v) gs a for test circuit see figure 13 v = 24 v v = 15 v i = 60a d dsds 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t = 25c j v = 0 v gs v , source-to-drain voltage (v) i , r everse drain cu rren t (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a ) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25 c t = 17 5c single pulse cj downloaded from: http:///
irli2203n fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5.0v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 c i , drain current (am ps) d t , case tem perature (c) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (the rmal re spo nse ) a therm al response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c downloaded from: http:///
irli2203n q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 4.5 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 1000 25 50 75 100 125 150 175 j e , single pulse a valanche e nergy (mj) as a starting t , junction temperature (c) v = 1 5v i to p 2 4a 42a bottom 60a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15 v 20v downloaded from: http:///
irli2203n p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * downloaded from: http:///
irli2203n part number international rectifier lo go example : this is an irf1010 w ith assembly lo t co de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a part marking information to-220 fullpak package outline to-220 fullpak outlinedimensions are shown in millimeters (inches) l ea d as sign ments 1 - ga t e 2 - d r ain 3 - source no t es : 1 dimension ing & toler ancing pe r a nsi y1 4.5m, 1982 2 controlling dimen sion: inch. d c a b minimum creepage distance betw een a -b -c-d = 4.80 (.189 ) 3x 2.85 (.1 12) 2.65 (.1 04) 2.80 (.110) 2.60 (.102) 4.80 (.189 ) 4.60 (.181 ) 7.10 (.280 ) 6.70 (.263 ) 3 .40 (.1 33) 3 .10 (.1 23) ? - a - 3.7 0 (.145) 3.2 0 (.126) 1.15 (.045) m in . 3.30 (.130) 3.10 (.122) - b - 0.90 (.035 ) 0.70 (.028 ) 3x 0.25 (.010) m a m b 2 .5 4 (.100) 2x 3x 13 .7 0 (.540) 13 .5 0 (.530) 16 .0 0 (.630) 15 .8 0 (.622) 1 2 3 10.60 (.417 ) 10.40 (.409 ) 1.40 (.05 5) 1.05 (.04 2) 0.48 (.019 ) 0.44 (.017 ) part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code e401 9245 irfi840g example : this is an irfi840g w ith assembly lot code e401 a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 11/96 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///
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