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september 2015 docid023985 rev 3 1 / 12 this is information on a product in full production. www.st.com STFW3N170 n - channel 1700 v, 7 typ., 2. 6 a powermesh? power mosfet in a to - 3 pf package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STFW3N170 1700 v 1 3 2. 6 a 63 w ? intrinsic capacitances and q g minimized ? to - 3pf for higher creepage between leads ? high speed switching ? 100% avalanche tested applications ? switching applications description this power mosfet is designed using the stmicroelectroni cs consolidated strip - layout - based mesh overlay? process. the result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. table 1: device summary order code marking package packing STFW3N170 3n170 to - 3 pf tube 1 2 3 t o-3pf
contents STFW3N170 2 / 12 docid023985 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 3pf package information ................................ ............................ 9 5 revision history ................................ ................................ ............ 11
STFW3N170 electrical ratings docid023985 rev 3 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 1700 v v gs gate - source voltage 30 v i d (1) drain current (continuous) at t case = 25 c 2. 6 a drain current (continuous) at t case = 100 c 1. 6 i dm drain current (pulsed) 10.4 a p tot total dissipation at t case = 25 c 63 w i ar avalanche current, repetit ive or not repetitive 0.8 a e a s (2) single pulse avalanche energy 2 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 3 . 5 kv t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) limited by maximum junction temperature. (2) starting t j = 25 c, i d = i ar , v dd = 50 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 2 c/w r thj - amb the rmal resistance junction - ambient 50
electrical characteristics STFW3N170 4 / 12 docid023985 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 1700 v i dss zero gate voltage drain current v gs = 0 v, v ds = 1700 v 10 a v gs = 0 v, v ds = 1700 v, t case = 125 c 500 i gss gate - body leakage current v ds = 0 v, v gs = 3 0 v 1 00 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 1. 3 a 7 1 3 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 110 0 - pf c oss output capacitance - 50 - c rss reverse transfer capacitance - 7 - r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 3.6 - q g total gate charge v dd = 1360 v, i d = 2. 6 a, v gs = 10 v (see figure 15: "gate charge test circuit" ) - 44 - nc q gs gate - source charge - 7 - q gd gate - drain charge - 25 - table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 850 v, i d = 1. 3 a r g = 4.7 , v gs = 10 v (see figure 14: "switching times test circuit for resistive load" and figure 19: "switching time waveform" ) - 25 - ns t r rise time - 9 - t d(off) turn - off delay time - 51 - t f fall time - 53 -
STFW3N170 electrical characteristics docid023985 rev 3 5 / 12 table 7: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current t j = 25 c - 2.6 a i sdm source - drain current (pulsed) - 10.4 v sd (1) forward on voltage v gs = 0 v, i sd = 2. 6 a - 1.5 v t rr reverse recovery time i sd = 2. 6 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 1 . 5 8 s q rr reverse recovery charge - 6 c i rrm reverse recovery current - 7.9 a t rr reverse recovery time i sd = 2. 6 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 2 . 12 s q rr reverse recovery charge - 8.8 c i rrm reverse recovery current - 8.3 a notes: (1) pulse test: pulse durat ion = 300 s, duty cycle 1.5%.
electrical characteristics STFW3N170 6 / 12 docid023985 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : ther mal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STFW3N170 electrical characteristics docid023985 rev 3 7 / 12 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits STFW3N170 8 / 12 docid023985 rev 3 3 test circuits figure 14 : switching times test circuit for resistive load figure 15 : gate charge test circuit figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
STFW3N170 package information docid023985 rev 3 9 / 12 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 3pf package information figure 20 : to - 3pf package outline 7627132_d
package inform ation STFW3N170 10 / 12 docid023985 rev 3 table 8: to - 3pf mechanical data dim. mm min. typ. max. a 5.30 5.70 c 2.80 3.20 d 3.10 3.50 d1 1.80 2.20 e 0.80 1.10 f 0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n 1.80 2.20 r 3.80 4.20 dia 3.40 3.80
STFW3N170 revision history docid023985 rev 3 11 / 12 5 revision history table 9: document revision history date revisi on changes 17 - jan - 2013 1 first release. 2 2 - j un - 2015 2 text and formatting changes throughout document. part number stw3n170 has been moved to a separate document. in section electrical ratings: - updated table absolute maximum ratings in section electrical characteristics: - renamed table static (was on/off s tates) - updated table dynamic - updated table switching times - updated table source - drain diode added section electrical characteristics (curves) in section package information: - updated section name (was package mechanical data) - updated to - 3pf packag e information 16 - sep - 2015 3 in section electrical ratings : - updated table absolute maximum ratings in section electrical ch aracteristics : - updated table dynamic in section electrical characteristics (curves) : - updated figures thermal impedance and output capacitance stored energy
STFW3N170 12 / 12 docid023985 rev 3 important not ice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers shou ld obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection , and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions dif ferent from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document s upersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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