- 52 - .062(1.58) .050(1.27) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .187(4.75) .160(4.06) .210(5.33) .195(4.95) .111(2.83) .090(2.29) .091(2.30) .078(1.99) ss12 thru ss110 1.0 amp. surface mount schottky barrier rectifiers voltage range 20 to 100 volts current 1.0 ampere f eatures for surface mounted application metal to silicon rectifier, majority carrier conduction low forward voltage drop easy pick and place high surge current capability plastic material used carriers underwriters laboratory classification 94v-o epitaxial construction high temperature soldering: 260 o c/ 10 seconds at terminals m echanical data case: molded plastic terminals: solder plated polarity: indicated by cathode band packaging: 12mm tape per eia std rs-481 weight: 0.064 gram sma/do-214ac dimensions in inches and (millimeters) m aximum ratings and electrical characteristics rating at 25 ambient temperature unle ss otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol ss 12 ss 13 ss 14 ss 15 ss 16 ss 19 ss 110 unit s maximum recurrent peak reverse voltage v rrm 20 30 40 50 60 90 100 v maximum rms voltage v rms 14 21 28 35 42 63 70 v maximum dc blocking voltage v dc 20 30 40 50 60 90 100 v maximum average forward rectified current at t l (see fig. 1) i (av) 1.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 30 a maximum instantaneous forward voltage (note 1) @ 1.0a v f 0.5 0.75 0.80 v 0.4 0.05 maximum dc reverse current @ t a =25 at rated dc blocking voltage @ t a =100 i r 10 5.0 0.5 ma ma maximum dc reverse current at vr=33v & t a =50 ht ir - 5.0 ua typical junction capacitance (note 3) cj 50 pf typical thermal resistance (note 2) r jl r ja 28 88 /w /w operating temperature range t j -65 to +125 -65 to +150 storage temperature range t stg -65 to +150 notes : 1. pulse test with pw=300 usec, 1% duty cycle 2. measured on p.c.board with 0.2 x 0.2?(5.0 x 5.0mm) copper pad areas. 3. measured at 1 mhz and applied reverse voltage of 4.0v d.c.
-53- ratings and characteristic curves (ss12 thru ss110) fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 10 100 0 10 20 40 30 50 number of cycles at 60hz at rated tl 8.3ms single half sine wave jedec method fig.1- maximum forward current derating curve average for ward current . (a) 50 60 70 80 90 100 110 120 170 160 150 140 130 0 .50 1.0 lead temperature. ( c) o resistive or inductive load ss15-ss110 ss12- SS14 pcb mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas fig.3- typical forward characteristics instantaneous for ward current . (a) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 0.01 0.1 1 10.0 50 forward voltage. (v) tj=125 c 0 tj=25 c 0 pulse width=300 s 1% duty cycle ss12-SS14 ss15-ss16 ss19-ss110 tj=150 c 0 fig.4- typical reverse characteristics instantaneous reverse current . (ma) 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 percent of rated peak reverse voltage. (%) tj=125 c 0 tj=25 c o tj=75 c 0 ss12-SS14 ss15-ss110 fig.5- typical junction capacitance junction cap acitance.(pf) .1 1.0 10 100 10 100 400 reverse voltage. (v) ss12-SS14 ss15-ss16 ss19-ss110 tj=25 c f=1.0mhz vsig=50mvp-p 0 c, cap acitance (pf) 160 140 120 100 80 60 40 20 0 04 8121620242832 v r , reverse voltage (volts) 36 40 180 200 note: typical capacitance at 0 v = 160 pf fig.6- typical capacitance
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