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this is information on a product in full production. june 2013 docid15486 rev 4 1/13 SD4931 hf/vhf/uhf rf power n-channel mosfet datasheet - production data figure 1. pin connection features ? improved ruggedness v (br)dss > 200 v ? excellent thermal stability ? 20:1 all phases load mismatch capability ? p out = 150 w min. with 14.8 db gain @ 175 mhz ? in compliance with the 2002/95/ec european directive description the SD4931 is an n-channel mos field-effect rf power transistor. it is intended for use in 50 v dc large signal applications up to 250 mhz. m174 epoxy sealed 1 3 4 2 1. drain 2. source 3. gate 4. source table 1. device summary order code marking base qty. package packaging (1) SD4931 SD4931 (1) 25 pcs m174 plastic tray 1. for more details please refer to chapter 5: marking, packing and shipping specifications . www.st.com
contents SD4931 2/13 docid15486 rev 4 contents 1 electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid15486 rev 4 3/13 SD4931 electrical data 13 1 electrical data 1.1 maximum ratings 1.2 thermal data table 2. absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain source voltage 200 v v dgr drain-gate voltage (r gs = 1 m )200v v gs gate-source voltage 20 v i d drain current 20 a p diss power dissipation 389 w t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r thjc junction - case thermal resistance 0.45 c/w
electrical characteristics SD4931 4/13 docid15486 rev 4 2 electrical characteristics t case = +25 c 2.1 static 2.2 dynamic table 4. static symbol test conditions min typ max unit v (br)dss v gs = 0 v i ds = 100 ma 200 v i dss v gs = 0 v v ds = 100 v 1 ma i gss v gs = 20 v v ds = 0 v 250 na v gs(q) v ds = 10 v i d = 250 ma 1.5 2.5 4.0 v v ds(on) v gs = 10 v i d = 10 a 3.5 5.0 v g fs v ds = 10 v i d = 2.5 a 2.5 4.0 s c iss v gs = 0 v v ds = 50 v f = 1 mhz 500 pf c oss v gs = 0 v v ds = 50 v f = 1 mhz 200 pf crss v gs = 0 v v ds = 50 v f = 1 mhz 8 pf table 5. dynamic symbol test conditions min typ max unit p 1db v dd = 50 v i dq = 250 ma f = 175 mhz 150 175 w g ps v dd = 50 v i dq = 250 ma p out = 150 w f = 175 mhz 13 14.8 db n d v dd = 50 v i dq = 250 ma p out = 150 w f = 175 mhz 50 56 % load mismatch v dd = 50 v i dq = 250 ma p out = 150 w f = 175 mhz all phase angles 10:1 20:1 vswr
docid15486 rev 4 5/13 SD4931 typical performance 13 3 typical performance figure 2. transient thermal impedance ( ( ( ( ( ( 7khupdolpshgdqfh =7+- & ?&: 5hfwdqjxodusrzhusxovhzlgwkvhf vlqjohsxovh 6lqjohuhshwlwlyhsxovh $09
typical performance SD4931 6/13 docid15486 rev 4 figure 3. transient th ermal impedance model 5 5 2kp & & & ) & & & ) & & & ) & & & ) 5 5 5 2kp 5 5 5 2kp 5 5 5 2kp 'lvvlsdwhg3rzhu:dwwv $09
docid15486 rev 4 7/13 SD4931 typical performance 13 figure 4. power gain and efficiency vs output power_vdd = 50 v, idq = 250 ma, freq = 175 mhz table 6. vgs sort (@250 ma) marking min. max. dd 1.5 1.6 ee 1.6 1.7 ff 1.7 1.8 a1.81.9 b1.92 c22.1 d2.12.2 e2.22.3 f2.32.4 g2.42.5 h2.52.6 i2.62.7 j2.72.8 k2.82.9 l2.93 m33.1 n3.13.2 o3.23.3 p3.33.4 q3.43.5
typical performance SD4931 8/13 docid15486 rev 4 r3.53.6 s3.63.7 t3.73.8 u3.83.9 v3.94 table 6. vgs sort (@250 ma) (continued) marking min. max.
docid15486 rev 4 9/13 SD4931 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack is an st trademark. table 7. m174 (0.500 dia 4/l n/herm w/flg) mechanical data dim. mm. inch min typ max min typ max a 5.56 5.584 0.219 0.230 b3.18 0.125 c 6.22 6.48 0.245 0.255 d 18.28 18.54 0.720 0.730 e3.18 0.125 f 24.64 24.89 0.970 0.980 g 12.57 12.83 0.495 0.505 h 0.08 0.18 0.003 0.007 i 2.11 3.00 0.083 0.118 j 3.81 4.45 0.150 0.175 k 7.11 0.280 l 25.53 26.67 1.005 1.050 m 3.05 3.30 0.120 0.130
package mechanical data SD4931 10/13 docid15486 rev 4 figure 5. package dimensions controlling dimension: inches 1011000d
docid15486 rev 4 11/13 SD4931 marking, packing and shipping specifications 13 5 marking, packing and shipping specifications figure 6. marking layout table 8. packing and shipping specifications order code packaging pcs per tray dry pack humidity v gs sort lot code SD4931 plastic tray 25 < 10% not mixed not mixed table 9. marking specifications symbol description x v gs sort cz assembly plant xxx last 3 digits of diffusion lot vy diffusion plant mar country of origin cz test and finishing plant y assembly year yy assembly week
revision history SD4931 12/13 docid15486 rev 4 6 revision history table 10. document revision history date revision changes 17-mar-2008 1 initial release. 14-jan-2010 2 updated test conditions in table 5: dynamic . 23-may-2011 3 inserted figure 2: transient thermal impedance , figure 3: transient thermal impedance model and section 5: marking, packing and shipping specifications . 10-jun-2013 4 ? modified document title to ?hf/vhf/uhf rf power n-channel mosfet? ? corrected error in v gs(q) symbol and test conditions in ta ble 4: static . ? minor text edits.
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