? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 4500 v v cgr t j = 25c to 150c, r ge = 1m ? 4500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 32 a i cm t c = 25c, 1ms 350 a ssoa v ge = 15v, t vj = 125c, r g = 10 ? i cm = 120 a (rbsoa) clamped inductive load 3600 v p c t c = 25c 290 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c f c mounting force 20..120 / 4.5..27 nm/lb.in. v isol 50/60hz , 1 minute 4000 v~ weight 5 g ds100617(5/14) IXYF40N450 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 4500 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 a note 2, t j = 100c 100 a i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 40a, v ge = 15v, note 1 3.2 3.9 v t j = 125c 4.0 v v ces = 4500v i c110 = 32a v ce(sat) ? ? ? ? ? 3.9v high voltage xpt tm igbt (electrically isolated tab) 1 = gate 5 = collector 2 = emitter isoplus i4-pak tm isolated tab 1 5 2 features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? 4000v~ electrical isolation ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches advance technical information
ixys reserves the right to change limits, test conditions and dimensions. IXYF40N450 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 18 30 s c ies 3550 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 146 pf c res 67 pf q g 170 nc q ge i c = 40a, v ge = 15v, v ce = 1000v 19 nc q gc 70 nc t d(on) 36 ns t r 330 ns t d(off) 110 ns t f 1120 ns t d(on) 46 ns t r 740 ns t d(off) 118 ns t f 1010 ns r thjc 0.43 c/w r thcs 0.15 c/w resistive switching times, t j = 125c i c = 40a, v ge = 15v v ce = 960v, r g = 2 ? resistive switching times, t j = 25c i c = 40a, v ge = 15v v ce = 960v, r g = 2 ? isoplus i4-pak tm (hv) outline pin 1 = gate pin2 = emitter pin 3 = collector tab 4 = isolated notes: 1. pulse test, t < 300 ? s, duty cycle, d < 2%. 2. device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. a1 u s b c t a r d q e l1 b1 a2 1 e e1 4 2 3
? 2014 ixys corporation, all rights reserved IXYF40N450 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 25v 19v 17v 9v 7v 5v 11v 13v 15v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 01234567 v ce - volts i c - amperes v ge = 25v 21v 17v 15v 13v 5v 7v 9v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 80a i c = 40a i c = 20a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 510152025 v ge - volts v ce - volts i c = 80a t j = 25oc 40a 20a fig. 6. input admittance 0 20 40 60 80 100 120 140 34567891011 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXYF40N450 ixys ref: y_40n450(h8) 5-28-14 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 500 1000 1500 2000 2500 3000 3500 4000 4500 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 1000v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
|
