preliminary data sheet ? electrically insulated metal frame ? extremely high power density ? 3000 v rms insulation voltage ? line voltage range up to 230 v rms ? high reliability ? modularity ? fully customizable ? broad range of accessories ? cost effective solution ? suitable for heavy duty applications maximum ratings i t(av) 431 497 356 a i t(rms) 677 780 559 a i tsm 12.8 30 22 50 hz, tj = tjmax, v r = 0 v ka i tsm 13.5 31.7 23.2 60 hz, tj = tjmax, v r = 0 v ka i2t 819 4500 2420 50 hz, tj = tjmax, v r = 0 v ka2s i2t 745 4095 2202 60 hz, tj = tjmax, v r = 0 v ka2s v drm /v rrm 400 800 1000 tj = tjmax v t jmax 150 150 125 c document gem_035,_049
quad scr modulest001 180 cond, half sine ta = 40 c air velocity = 5 m/s gem_035,_049 quad scr modules conditions units part number parameters ------------------ gem_043 gem_049 gem_035 green power solutions srl via venezia, 34d 10088 - volpiano (to) - italy phone: +39-011-988 2251 fax: +39-011-988 1358 web: www.gpsemi.it e-mail: info@gpsemi.it description this new family of high power modules brings to the high power applications the same compactness, ease of use and scalability of the lower power semiconduc tor modules. in addition to these typical features (i.e. standard dimensions, electrical i nsulation, various circuit types, etc.) the new green power easy module (gem) family includes many feat ures aimed to simplify their adoption allowing the end users to focus on their core business. the se features include: ? embedded air cooling system (heatsink and fan) ? optimised snubber circuits ? pulse transformer modules ? ducted heat flow.
gem_035,_049 quad scr modules v code 04 08 10 on-state characteristics gem_043 gem_049 gem_035 conditions units v t(to) threshold voltage 0.87 0.80 0.85 tj = tjmax v r t on-state slope resistance 0.238 0.170 0.270 tj = tjmax m w i h holding current, max 600 300 300 tj = 25c ma i l latching current, typ 1000 1000 1000 tj = 25c ma p max max power losses 970 1006 777 t a = 40c w triggering characteristics gem_043 gem_049 gem_035 conditions units v gt gate trigger voltage 2.5 2.5 2.5 t j = 25c, v d = 5v v i gt gate trigger current 190 250 250 t j = 25c, v d = 5v ma p gm peak gate power dissipation 10 15 15 pulse width 1 ms w p g(av) average gate power dissipation 2 4 4 w i fgm peak gate current 3 8 8 a v fgm peak gate voltage (forward) 20 20 20 v v rgm peak gate voltage (reverse) 5 5 5 v switching characteristics gem_043 gem_049 gem_035 conditions units di/dt critical rate of rise of on-state current 200 400 400 tj = tjmax a/s dv/dt critical rate of rise of off-state voltage 500 1000 1000 tj = tjmax v/s t q turn-off time, typ 200 200 200 tj=tjmax, it=1000a di/dt=-20a/s vr=50v dv/dt=20v/s s document gem_035,_049 quad scr modulest001 115 400 v l(rms) gem_049 190 i drm i rrm @ tjmax [ma] v drm v rrm max repetitive reverse and off-state blocking voltage part number maximum suggested rms line voltage 50 [v] parameters parameters 800 parameters gem_043 100 [v] 230 gem_035 1000 75
gem_035,_049 quad scr modules 1.0 0 24 maximum iec class 1 currents for typical circuit ty pe gem_043 gem_049 gem_035 conditions units ac switch 963 1111 796 t a = 40 c delay angle = 0 a center tap 862 995 713 t a = 40 c delay angle = 0 a two pulse bridge 862 995 713 t a = 40 c delay angle = 0 a six pulse bridge 1244 1440 1030 t a = 40 c delay angle = 0 a double star with i.p. transf. 2495 2887 2066 t a = 40 c delay angle = 0 a 1.5;1 min 1.0 0 24 maximum iec class 2 currents for typical circuit ty pe gem_043 gem_049 gem_035 conditions units ac switch 777 888 644 t a = 40 c delay angle = 0 a center tap 700 800 580 t a = 40 c delay angle = 0 a two pulse bridge 700 800 580 t a = 40 c delay angle = 0 a six pulse bridge 1000 1160 840 t a = 40 c delay angle = 0 a double star with i.p. transf. 2000 2360 1690 t a = 40 c delay angle = 0 a thermal and mechanical characteristics gem_043 gem_049 gem_035 conditions units t jmax max operating junction temperature 150 150 125 c t stg storage temperature -40 +70 -40 +70 -40 +70 c r thja thermal resistance (junction to ambient) 0.227 0.219 0.219 air velocity = 5 m/s c/w mounting torque - gem to panel (+/- 10%) 7 7 7 m6 mounting screw nm mounting torque - busbar to gem (+/- 10%) 14 14 14 m8 mounting screw nm m mass, typ with fapc options kg overall dimensions d depth 200 mm h height 570 mm w width 103 mm document gem_035,_049 quad scr modulest001 circuit type parameters f circuit type h d
gem_035,_049 quad scr modules gem r 043 - 16 - 0 f 0 l p c 0 2 d l 1 2 3 4 5 6 7 8 9 10 11 12 13 1 circuit configuration 2 gem average current / 10 3 gem blocking voltage / 100 4 0 = no fan 5 0 = no fuse - f = with fuse protetction 6 0 = no standard busbar available for this module; p lease contact factory in case of specific need 7 0 = no anti-parallel busbar - l = anti-parallel bus bar 8 0 = no pulse transformer - p = with pulse transform er * 9 0 = no fan loss detection module - c = with fan lo ss detection module 10 0 = no scr fault detection module - s = scr fault d etection module (for ac-switch circuits) 11 0 = no snubber - 1 = one snubber - 2 = two snubbers 12 0 = no fan-on-demand thermo-switch - d = fan-on-dem and thermo-switch (trip point 50 c) 13 0 = no current transformer - l (r) = sirio current transformer on the left side (or on the right side) * pulse transformer gt001 (dual) or gt002 (single) d epending on the circuit configuration. for pulse transformer characteristics see their spe cific datasheets. document gem_025,_031 quad scr modulest001 part-numbering system
gem_035,_049 quad scr modules gemr example of application - 3p regen bridge realized with three gemr modules side view top view document gem_035,_049 quad scr modulest001 in the interest of product improvement green power solutions reserves the right to change any specification given in this dat a sheet without notice. g1 k1 k1 th th k4 g4 a4 g3 k3 k3 k2 g2 a2 t1 t2 t4 t3 ac k1 a2 k3 a4 ac
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