cha3218 - 99f rohs compliant ref. : dscha32181157 - 06 jun 11 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 2 - 18ghz low noise amplifier gaas monolithic microwave ic description the cha3218 - 99f is a two stage very wide band low noise amplifier. the wide frequency band asso ciated to a 2db low noise figure make s this circuit very versatile for very high performance systems . it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process, 0. 1 5m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form . main features main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 2 18 ghz gain linear gain 24 db nf noise figure 2 db pout output power @1db comp. 1 5 dbm vg1 vg2 vd1 vd2 in out
cha3218 - 99f 2 - 18ghz low noise amplifier ref. : dscha32181157 - 06 jun 11 2 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb.= +25c, vd = + 4 v symbol parameter min typ max unit freq operating frequency 2 18 ghz g small signal gain 24 db s11 input return loss from 2ghz to 16ghz inp ut return loss from 16ghz to 18ghz 8 4 db s22 output return loss 12 db nf noise figure 2 db p1db output power at 1db gain compression 1 5 dbm oip3 output 3rd order intercept point 2 5 dbm vd positive supply voltage 4 v vg negative supply v oltage - 0.45v v id positive supply dc current 120 ma thes e values are representative of measurements made in test fixture that are made with bonding wires at the rf ports.
2 - 18ghz low noise amplifier cha3218 - 99f ref. : dscha32181157 - 06 jun 11 3 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 absolute maximum ratings (1) tamb.= +25c symbol parameter values uni t vd drain bias voltage 6 v v id drain bias current 20 0 ma vg gate bias voltage - 2 to - 0. 3 v tj junction temperature (2) 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +15 0 c (1) operation of this device ab ove anyone of these parameters may cause permanent damage. typical bias conditions tamb.= + 25c symbol pad n o parameter values unit v d vd1, v d 2 drain supply voltage 4 v v g v g1, vg2 gate supply voltage - 0.45 v
cha3218 - 99f 2 - 18ghz low noise amplifier ref. : dscha32181157 - 06 jun 11 4 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on - wafer sij parameters tamb.= +25c , vd = + 4 .0 v, id = 120 ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 1.0 - 6.54 - 68.84 - 66.51 120.80 20.22 9.61 - 10.57 - 165.20 1.5 - 8.65 - 90.41 - 69.52 59.25 23.39 - 18.22 - 12. 10 150.90 2.0 - 8.98 - 101.30 - 66.71 - 70.17 24.52 - 44.21 - 13.55 114.90 2.5 - 8.81 - 111.50 - 66.45 - 6.78 24.62 - 67.98 - 14.29 98.03 3.0 - 8.84 - 121.30 - 63.63 31.22 24.81 - 90.89 - 15.82 82.15 3.5 - 8.62 - 130.40 - 76.10 35.29 24.79 - 110.50 - 15.54 69.41 4.0 - 8.41 - 138.90 - 82.38 120.20 24.83 - 129.90 - 15.35 54.40 4.5 - 8.34 - 146.60 - 69.61 170.60 24.85 - 149.10 - 15.29 43.06 5.0 - 8.15 - 152.90 - 80.83 - 158.00 24.88 - 167.80 - 15.14 31.56 5.5 - 8.01 - 160.10 - 70.41 - 142.20 24.93 173.20 - 15.48 17.93 6.0 - 7.93 - 166.70 - 76.72 - 100.20 24.90 154.10 - 15.44 9.39 6.5 - 7.88 - 173.60 - 66.20 - 167.50 24.90 135.30 - 15.84 1.16 7.0 - 7.83 179.50 - 74.37 141.10 24.86 116.40 - 16.10 - 8.84 7.5 - 7.77 172.40 - 68.59 83.30 24.80 97.70 - 16.15 - 13.36 8.0 - 7.81 164.70 - 61.56 22.11 24.76 78.88 - 16.93 - 19.65 8.5 - 7.93 156.50 - 74.50 - 79.14 24.68 59.95 - 17.15 - 26.74 9.0 - 8.14 148.10 - 60.72 13.83 24.58 41.21 - 17.41 - 28.81 9.5 - 8.45 138.90 - 61.33 - 160.50 24.50 22.53 - 17.58 - 28.73 10.0 - 8.78 129.40 - 57.71 61.63 24.40 3.86 - 17.91 - 30.03 10.5 - 9.20 119.6 0 - 66.95 135.60 24.32 - 14.76 - 17.34 - 30.37 11.0 - 9.69 109.00 - 67.69 - 46.82 24.24 - 33.33 - 17.57 - 24.55 11.5 - 10.20 98.09 - 56.04 116.50 24.17 - 51.94 - 17.25 - 32.41 12.0 - 10.67 86.43 - 63.65 139.60 24.14 - 70.65 - 16.07 - 28.71 12.5 - 10.97 73.94 - 63.23 87.11 2 4.16 - 89.46 - 16.07 - 26.83 13.0 - 10.98 61.87 - 69.79 - 23.20 24.17 - 108.70 - 15.26 - 31.21 13.5 - 10.85 49.90 - 58.09 26.48 24.25 - 128.30 - 14.55 - 31.53 14.0 - 10.26 36.84 - 60.33 - 45.50 24.32 - 148.50 - 13.76 - 35.57 14.5 - 9.52 25.18 - 56.67 87.72 24.39 - 169.30 - 12 .82 - 38.97 15.0 - 8.66 13.53 - 56.17 82.83 24.40 169.50 - 12.14 - 43.52 15.5 - 7.37 1.83 - 55.80 131.80 24.40 147.50 - 11.62 - 47.52 16.0 - 6.31 - 9.73 - 68.50 - 19.80 24.29 125.20 - 10.99 - 50.85 16.5 - 5.12 - 19.29 - 54.25 141.00 24.17 102.50 - 10.17 - 56.71 17.0 - 4.2 1 - 30.54 - 52.76 - 4.26 23.98 79.88 - 9.57 - 59.52 17.5 - 3.42 - 40.79 - 49.86 - 28.50 23.81 56.73 - 9.61 - 67.15 18.0 - 2.70 - 50.34 - 55.04 163.50 23.55 33.18 - 9.34 - 75.01 18.5 - 2.01 - 59.27 - 57.27 - 112.00 23.28 8.48 - 9.76 - 77.78 19.0 - 1.40 - 67.90 - 55.13 - 111.50 2 2.96 - 17.05 - 10.46 - 80.96 19.5 - 0.89 - 76.81 - 59.46 52.25 22.21 - 40.98 - 9.23 - 78.01 20.0 - 0.44 - 84.70 - 47.07 - 60.90 21.91 - 60.36 - 8.24 - 93.21
2 - 18ghz low noise amplifier cha3218 - 99f ref. : dscha32181157 - 06 jun 11 5 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb.= +25c, vd = + 4 v, id = 120ma [s] parameters & noise figure
cha3218 - 99f 2 - 18ghz low noise amplifier ref. : dscha32181157 - 06 jun 11 6 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb.= +25c, vd = + 4 v, id = 120ma output power @ 1db comp versus frequency output power ip3 versus frequency 10 11 12 13 14 15 16 17 18 19 20 0 2 4 6 8 10 12 14 16 18 20 pout @ 1db comp frequency (ghz) 15 17 19 21 23 25 27 29 31 33 35 0 2 4 6 8 10 12 14 16 18 20 output ip3 (dbm) frequency (ghz)
2 - 18ghz low noise amplifier cha3218 - 99f ref. : dscha32181157 - 06 jun 11 7 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 mechanical data chip thickness: 100m. chip size : 3070x1570 35m all dim ensions are in micrometers rf pads (1, 10) = 100 x 122m2 dc pads (2, 4, 6, 8) = 100 x 100m2 pin number pin name description 1 in input rf 2 , 4, vg1, vg2 gate supply voltage 6, 8 vd1, vd2 drain supply voltage 3 , 5, 7, 9 gnd ground (no bond ing required) 10 out output rf 1 10 2 3 4 5 6 7 8 9 cotation : m tolerance : 35m 3 070 1 570 000 000 225 525 825 1 125 1 425 1 725 2 025 2 325 1 465 905 770 630 120 2 940 630 770 910
cha3218 - 99f 2 - 18ghz low noise amplifier ref. : dscha32181157 - 06 jun 11 8 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended assembly plan 25m wedge bonding is preferred recommended circuit bonding table label type decoupling comment v d 1, v d 2 vd 470 pf & 220n f drain s upply voltage v g1, vg2 vg 1 0 0pf & 10nf gate s uppl y voltage
2 - 18ghz low noise amplifier cha3218 - 99f ref. : dscha32181157 - 06 jun 11 9 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes
cha3218 - 99f 2 - 18ghz low noise amplifier ref. : dscha32181157 - 06 jun 11 10 / 10 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations fo r the ums products. ordering information chip form : ch a3218 - 99 f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductor s s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or pat ent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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