VEMD5010X01 www.vishay.com vishay semiconductors rev. 1.0, 04-sep-14 1 document number: 84202 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description VEMD5010X01 is a high speed and high sensitive pin photodiode. it is a low profi le surface mount device (smd) including the chip with a 7.5 mm 2 sensitive area detecting visible and near infrared radiation. features ? package type: surface mount ? package form: top view ? dimensions (l x w x h in mm): 5 x 4 x 0.9 ? radiant sensitive area (in mm 2 ): 7.5 ? aec-q101 qualified ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? floor life: 72 h, msl 4, according to j-std-020 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? high speed photo detector note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i ra (a) ? (deg) 0.1 (nm) VEMD5010X01 48 65 430 to 1100 ordering information ordering code packaging remarks package form VEMD5010X01 tape and reel moq: 1000 pcs, 1000 pcs/reel top view VEMD5010X01-gs15 tape and reel moq: 5000 pcs, 5000 pcs/reel top view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 20 v power dissi pation t amb 25 c p v 215 mw junction temperature t j 110 c operating temperature range t amb -40 to +110 c storage temperature range t stg -40 to +110 c soldering temperature acc. reflow solder profile fig. 8 t sd 260 c thermal resistance junction/ambient r thja 350 k/w esd safety hbm 2000 v, 1.5 k , 100 pf, 3 pulses esd hbm 2 kv
VEMD5010X01 www.vishay.com vishay semiconductors rev. 1.0, 04-sep-14 2 document number: 84202 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) basic characteristics graphs to be extended to 110 c ambient temperatures where applicable. fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 20 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo -2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 45 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 40 48 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.1 430 to 1100 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 40 60 80 1 10 100 1000 100 94 8403 v r = 10 v t amb - ambient temperature (c) i ro - reverse dark current (na) 0.6 0.8 1.0 1.2 1.4 94 8409 v r =5v = 950 nm 100 80 60 40 20 0 i - relative reverse light current t - ambient temperature (c) amb ra rel
VEMD5010X01 www.vishay.com vishay semiconductors rev. 1.0, 04-sep-14 3 document number: 84202 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 i ra - reverse light current (a) e e - irradiance (mw/cm 2 ) 10 12787 v r = 5 v = 950 nm 0.1 1 10 1 10 100 v r - reverse voltage (v) 100 12788 i ra - reverse light current (a) 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 = 950 nm 0 20 40 60 80 948407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - reverse voltage (v) 0.1 100 110 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8420 - wavelength (nm) s( ) rel - relative spectral sensitivit y 0.4 0.2 0 s rel - relative radiant sensitivity 94 8406 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement
VEMD5010X01 www.vishay.com vishay semiconductors rev. 1.0, 04-sep-14 4 document number: 84202 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters top view bottom view recommended footprint optical window drawing- no.: 6.550-5329.01-4 issue: prel.4. 30.05.2014 not indicated tolerances 0.1 technical drawings according to din specification. 4 5 0 . 9 0 . 1 5 optical center 2 . 1 2 2 0 . 8 0 . 9 0 . 6 3 . 7 0 . 7 5 0 . 7 5 1 4.55 center of device cathode 0.5 0.5 1.2 3.1 exposed pad (cathode) 1 . 2 2 . 5 tie bar, electrical connected to cathode anode nc
VEMD5010X01 www.vishay.com vishay semiconductors rev. 1.0, 04-sep-14 5 document number: 84202 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tape and reel dimensions in millimeters x b-b ( 2 : 1 ) x b b tape-& reel dimensions: drawing refers to following types: vemd 5110x01 drawing-no.: 9.800-5129.01-4; issue: prel. 14.04.2014 ? 1 8 0 ? 1 3 1 . 5 1 8 . 4 1 2 . 4 e m p t y l e a d e r 4 0 0 m m m i n . ( e m p t y t r a i l e r 2 0 0 m m m i n . ) 1 0 0 m m m i n . w i t h c o v e r t a p e reel-design is reperesentative for different types unreel direction label posted here 0.3 1.42 ? 1.5 ? 1.55 8 2 1.75 5.5 anode
VEMD5010X01 www.vishay.com vishay semiconductors rev. 1.0, 04-sep-14 6 document number: 84202 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020d drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and re moving from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 4 floor life: 72 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorption devices should be baked before soldering. conditions see j-std-020 or recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
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