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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 45 i d @ v gs = 12v, t c = 100c continuous drain current 29 i dm pulsed drain current 180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 256 mj i ar avalanche current 45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak diode recovery dv/dt 19.8 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 8.0 (typical) g international rectifiers r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a www.irf.com 1

to-254aa tabless pre-irradiation low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight radiation hardened IRHMK57260SEpower mosfet 200v, n-channel surface mount (low-ohmic to-254aa) technology product summary part number radiation level r ds (on) i d IRHMK57260SE 100k rads (si) 0.044 ? 45a pd-96915 downloaded from: http:///
IRHMK57260SE pre-irradiation 2 www.irf.com note: corresponding spice and saber models are available on international rectifier web site.

thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.60 r thcs case-to-sink 0.21 c/w r thja junction-to-ambient 48 t ypical socket mount source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 45 i sm pulse source current (body diode) 180 v sd diode forward voltage 1.2 v t j = 25c, i s = 45a, v gs = 0v t rr reverse recovery time 450 ns t j = 25c, i f = 45a, di/dt 100a/ s q rr reverse recovery charge 6.9 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.25 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.044 ? v gs = 12v, i d = 29a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 35 s ( )v ds = 15v, i ds = 29a i dss zero gate voltage drain current 10 v ds = 160v ,v gs =0v 2 5 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 165 v gs =12v, i d = 45a q gs gate-to-source charge 45 nc v ds = 100v q gd gate-to-drain (miller) charge 75 t d (on) turn-on delay time 35 v dd = 100v, i d = 45a t r rise time 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time 80 t f fall time 50 l s + l d total inductance 6.8 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 5295 v gs = 0v, v ds = 25v c oss output capacitance 900 p f f = 1.0mhz c rss reverse transfer capacitance 37 r g internal gate resistance 1.47 ? f = 0.89mhz, open drain na ? nh ns a downloaded from: http:///
www.irf.com 3 pre-irradiation IRHMK57260SE international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

table 2. single event effect safe operating area ion let energy range vds (v) mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=-5v @vgs=-10v @vgs=-15v @vgs=-20v br 37 305 39 200 200 200 200 200 i 60 340 32 200 200 200 185 120 au 82 350 28 200 200 150 50 25 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds =160v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.049 ? v gs = 12v, i d = 35a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 45a resistance (low-ohmic to-254) 0.044 ? v gs = 12v, i d = 35a 0 50 100 150 200 250 0 -5 -10 -15 -20 vgs vds br i au na downloaded from: http:///
IRHMK57260SE pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 45a 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width, tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 567891 0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c downloaded from: http:///
www.irf.com 5 pre-irradiation IRHMK57260SE fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 45a v = 40v ds v = 100v ds v = 160v ds 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 1.0 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s downloaded from: http:///
IRHMK57260SE pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
www.irf.com 7 pre-irradiation IRHMK57260SE q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 20a 28.5a bottom 45a downloaded from: http:///
IRHMK57260SE pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.25mh peak i l = 45a, v gs =12v i sd 45a, di/dt 375a/ s, v dd 200v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2004 case outline and dimensions low-ohmic to-254aa tabless caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 4. this outline is a modified to-254aa jedec outline. 3. cont rolling dimens ion: inch. not e s : pin assignments 1 = drain 2 = source 3 = gate downloaded from: http:///

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