dm t6015lss document number: d s 38799 rev. 1 - 2 1 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss 60v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c 60 v 16 m? @ v gs = 10 v 9.2 a 2 1 m? @ v gs = 4.5 v 7.5 a description and applications this mosfet is designed to minimize the on - state resistance (r ds(on ) ) , maintain superior switching performance, making it ideal for high efficiency power management applications. ? load switch ? adaptor switch ? notebook pc features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: so - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0. 076 grams ( a pproximate) ordering information (note 4 ) part number case packaging DMT6015LSS - 13 so - 8 2 , 500 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, g o to our website at http : //www.diodes.com/products/packages.html . marking information = manufacturers marking so - 8 equivalent circuit pin1 d s s s g d d d pin - o ut t op view t op view t601 5 ls 1 4 8 5 ww yy d s g g ate protection diode
dm t6015lss document number: d s 38799 rev. 1 - 2 2 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v gate - source vol tage v gss 16 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 9.2 7.4 a t<10s t a = + 25 c t a = + 70 c i d 11.9 9.5 a continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 7.5 6.0 a t<10s t a = + 25 c t a = + 70 c i d 9.7 7.7 a pulsed drain curren t ( 10 dm 60 a maximum continuous body diode f orward current (note 6 ) i s 2 a avalanche current , l = 0.1mh i as 15 a avalanche energy , l = 0.1mh e as 11 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characte ristic symbol value units total power dissipation (note 5 ) p d 1.5 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 85 c/w t<10s 45 c/w total power dissipation (note 6 ) p d 2. 1 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 74 c/w t<10s 37 c/w thermal resistance, junction to case r j c 13 c/w operating and storage temperature range t j, t stg - 5 5 to + 15 0 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol m in typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 250 a zero gate voltage drain current i dss ds = 48 v , v gs = 0v gate - source leakage i gss a v gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.5 ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? gs = 10 v, i d = 10 a sd g s = 0v, i s = 1 a dynamic characteristics (note 8 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ? ds = 30 v, i d = 10 a total gate charge ( v gs = 10 v ) q g gs gd d(on) gs = 10 v , v ds = 30 v , r g = 6 ? d = 10 a turn - on rise time t r d(off) f rr f = 10 a, di/dt = 10 0a/ s reverse recovery charge q rr notes: 5 . device mounted on f r - 4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect. 8 . g uaranteed by design. not subject to product testing.
dm t6015lss document number: d s 38799 rev. 1 - 2 3 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss 0 5 10 15 20 25 30 0 1 2 3 4 5 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 10v gs v = 4v gs v = 2.3v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 0.01 0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.018 0 3 6 9 12 15 18 21 24 27 30 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 i = 10a d i = 6a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0 3 6 9 12 15 18 21 24 27 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 6a d v = 10v gs i = 10a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm t6015lss document number: d s 38799 rev. 1 - 2 4 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss 0.005 0.01 0.015 0.02 0.025 0.03 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature v = 4.5v gs i = 6a d v = 10v gs i = 10a d 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 2 4 6 8 10 0 4 8 12 16 20 v g a t e t h r e s h o l d v o l t a g e ( v ) g s v = 30v ds i = 10a d q , total gate charge (nc) g figure 11 gate charge 0.001 0.01 0.1 1 10 100 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j(m ax) t = 25c c v = 10v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm t6015lss document number: d s 38799 rev. 1 - 2 5 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? ja ja r = 96c/w ? ja duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm t6015lss document number: d s 38799 rev. 1 - 2 6 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. so - 8 so - 8 dim min max a C a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h C l 0.62 0.82 ? ? all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. so - 8 dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y
dm t6015lss document number: d s 38799 rev. 1 - 2 7 of 7 www.diodes.com may 2016 ? diodes incorporated dm t6015 lss important notice diodes incorporat ed makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any l iability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pr oducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpor ated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chan nel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support de vices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonabl y expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulato ry and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided b y diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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