tssop-8 plastic-encapsulate transistors cj s 6562 n- and p-channel 2.5-v(g-s) mosfet equivalent circuit maximum ratings (t a =25 unless otherwise noted) parameter s ym bol n-channel p-channel unit drain-source v oltage v ds 20 -20 gate-source voltage v gs 12 12 v t a =25 4.5 -3.5 continuous drain current (t j =150 ) a t a =70 i d 3.6 -2.7 pulsed drain current i dm 30 -30 continuous source current(diode conduction) a i s 1.25 -1.25 a t a =25 1.0 power dissipation a t a =70 p d 0.64 w maximum junction-to-ambient a r thja 125 /w operating junction and s torage temperature t j, t stg -55 ~150 notes : a. surface mounted on fr4 board, t 10 s tssop-8 1 of 4 sales@zpsemi.com www.zpsemi.com cj s 6562
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static v ds =v gs , i d =250a 0.6 gate-threshold voltage v gs(th) v ds =v gs , i d = - 250a n-ch p-ch -0.6 -1.2 1.2 v gate-body leakage i gss v ds =0v, v gs = 12v n-ch p-ch 100 na v ds =20v, v gs =0v 1 v ds =-20v, v gs =0v n-ch p-ch -1 v ds =20v, v gs =0v ,t j =55 25 zero gate voltage drain current i dss v ds =-20v, v gs =0v ,t j =55 n-ch p-ch -25 a v ds 5v, v gs =4.5v on-state drain current a i d(on) v ds -5v, v gs =-4.5v n-ch p-ch 30 -30 a v gs =4.5v, i d =4.5a v gs =-4.5v, i d =-3.5a n-ch p-ch 0.023 0.040 0.030 0.05 0 v gs =2.5v, i d =3.9a drain-source on-resistance a r ds(on ) v gs =-2.5v, i d =-2.7a n-ch p-ch 0.032 0.061 0.040 0.0 90 ? v ds =10v, i d =4.5a forward transconductance a g fs v ds =-10v, i d =-3.5a n-ch p-ch 4 5 s i s =1.25a,v gs =0v diode forward voltage a v sd i s =-1.25a,v gs =0v n-ch p-ch 0.65 0.72 1.2 -1.2 v dynamic b total gate charge q g n-ch p-ch 25 25 gate-source charge q gs n-ch p-ch 3.0 3.5 gate-drain charge q gd n-channel v ds =15v,v gs =4.5v,i d =4.5a p-channel v ds =-15v,v gs =-4.5v,i d =-3.5a n-ch p-ch 3.3 3.5 nc turn-on delay time t d (on) n-ch p-ch 50 50 rise time t r n-ch p-ch 80 60 turn-off delay time t d(off) n-ch p-ch 100 100 fall time t f n-channel v dd =10v,r l =10 ? , i d 1a, v gen =10v,r g =6 ? p-channel v dd =-10v,r l =10 ? , i d -1a, v gen =-10v,r g =6 ? n-ch p-ch 40 40 i f =1.25a,di/dt=100a/ s source- drain reverse recovery time t rr i f =-1.25a,di/dt=100a/ s n-ch p-ch 60 100 n s notes : a. pulse test : pulse width 300s, duty cycle 2%. b. guaranteed by design, not su bject to production testing. 2 of 4 sales@zpsemi.com www.zpsemi.com cj s 6562
0 5 10 15 20 25 30 0 30 60 90 120 150 024681 0 0.00 0.04 0.08 0.12 0.16 0.20 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 024681 0 0 4 8 12 16 20 r ds(on) ? ? i d ta=25 o c v gs =2.5v v gs =4.5v on-resistance r ds(on) (m ) drain current i d (a) ta=25 o c r ds(on) ? ? v gs i d =4.5a on-resistance r ds(on) ( ) gate to source voltage v gs (v) transfer characteristics ta=25 o c gate to source voltage v gs (v) drain current i d (a) v gs =3.5v 3v 2.5v v gs =1.5v v gs =2v output characteristics drain to source voltage v ds (v) drain current i d (a) 3 of 4 sales@zpsemi.com www.zpsemi.com cj s 6562 c , mar ,2013
-0.0 -0.3 -0.6 -0.9 -1.2 -1.5 -0 -2 -4 -6 -8 -10 -0 -4 -8 -12 -16 -20 0 30 60 90 120 150 -0 -1 -2 -3 -4 -5 0.00 0.05 0.10 0.15 0.20 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0 -2 -4 -6 -8 -10 transfer characteristics ta=25 o c gate to source voltage v gs (v) drain current i d (a) r ds(on) ? ? i d v gs =- 1.8v v gs =- 2.5v v gs =- 4.5v on-resistance r ds(on) (m ) drain current i d (a) i d =-2a r ds(on) ? ? v gs i d =-4.4a on-resistance r ds(on) ( ) gate to source voltage v gs (v) v gs =-1.5v v gs =-3.5v -3v -2.5v -2v v gs =-1v output characteristics drain to source voltage v ds (v) drain current i d (a) 4 of 4 sales@zpsemi.com www.zpsemi.com cj s 6562 c , mar ,2013
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