378896 0 pn p smal l signa l genera l purpos e amplifier s an d switche s absolut e maximu m rating s maximu m temperature s 2n3644/4 5 pn3644/4 5 storag e temperatur e -55 c to+125 c -55 c c to+150 c operatin g junctio n temperatur e 125 c 150 c lea d temperatur e (1 0 seconds ) 260 c 260 c maximu m powe r dissipatio n (note s 2 & 3 ) tota l dissipatio n a t 25 c cas e temperatur e a t 25 c ambien t temperatur e maximu m voltage s an d curren t collecto r t o bas e voltag e collecto r t o emitte r voltag e (note 4 ) veb o emitte r t o bas e voltag e collector curren t 0,0 7 w 0.3 w 2n/pn364 5 -60 v -60 v -5.0 v 500m a lo w 0.62 5 w 2n/pn364 4 -45 v -4 5 v -5.0 v 500m a electrica l characteristic s (25 c ambien t temperatur e unles s otherwis e noted ) symbo l "f e hf e hf e co b ci b v ce(sat ) v ceo(sus ) v se(sat ) bv e b o bvcb o to n 'of f 'ce s characteristi c d c curren t gai n d c puls e curren t gai n hig h frequency current . gai n outpu t capacitanc e inpu t capacitanc e pulse d collecto r saturatio n voltag e collecto r t o emitte r sustainin g voltag e ' pulse d bas e emitte r t o bas e breakdow n voltag e collecto r t o bas e breakdow n voltag e tur n o n tim e tur n of f tim e collecto r revers e curren t 2n364 4 pn364 4 min . max . 4 0 8 0 10 0 8 0 24 0 10 0 30 0 2 0 2. 0 8. 0 3 5 -0.2 5 -0. 4 -1. 0 -4 5 -1. 0 -1. 3 -0. 8 -2, 0 -5. 0 -4 5 4 0 10 0 3 5 2. 0 . 2n364 5 pn364 5 min . max . 4 0 8 0 10 0 8 0 24 0 10 0 30 0 2 0 2. 0 8. 0 3 5 -0.2 5 -0. 4 -1. 0 -6 0 -1. 0 -1. 3 -0, 8 -2. 0 -5. 0 -6 0 4 0 10 0 3 5 2. 0 unit s p f p f v v v v vv v vv n s n s n a n a m a * a tes t condition s l c = 10 0 tia, v c e = -10 v i c = 1.0ma , vc e " ~ 1 o v i g = 10ma , v c e = -1 0 v i c ? 50ma , vc e * 1. 0 v i c = 150ma , vc e * -10 v 1 c = 30 0 ma , vc e " -2. 0 v 1 c " 2 0 ma , vc e " - 2 0 v , f - 10 0 mh z i e = , vc b = -iov , f = 14 0 kh z l c -0 , ve b = -0.5v , f - 140kh z i c " 5 0 ma , i g - 2. 5 m a ic " 15 0 ma , i b = 15m a 1c " 300ma , i b = 30rn a i c " 1 0 m a (pulsed) , i b " 0 1 c " 50ma , i b = 2. 5 m a 1 c = 150ma , i b = 15m a 1 c = 30 0 ma , i b - 3 0 m a ic-q , i e = io m a ic - 10 0 ma , i e - o 1 c * 300ma , ib i ? 30ma , v c c ? -3 0 v 1 c * 300ma , ig- ) ? 13 2 ? 30ma , vc e = -3 0 v vc e ? -3 0 v , v b e * o vce ? -50 v, vbe ? o vc e ? -3 v . vb e ? > t a " 65 c vce ? -s o v, v 8 e ? o, t a - 65 c pn364 4 pn364 5 to-10 5 2n364 4 2n364 5 scatm g klmi c qualit y semi-conductor s downloaded from: http:///
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