www.goodark.com page 1 of 6 rev.2.2 ssf 6 008 60v n-channel mosfet absolute maximum ratings parameter max. units i d @t c =25? c continuous drain current,vgs@10v 84 i d @t c =100?c continuous drain current,vgs@10v 76 i dm pulsed drain current 310 a power dissipation 181 w p d @t c =25?c linear derating factor 1.5 w/? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 400 mj e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery voltage 30 v/ns t j t stg operating junction and storage temperature range C55 to +175 ?c thermal resistance parameter min. typ. max. units r jc junction-to-case 0.83 r ja junction-to-ambient 62 ?c/w electrical characteristics @t j =25 ?c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 60 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 5.5 8 m v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250a 2 v ds =60v,v gs =0v i dss drain-to-source leakage current 10 a v ds =60v, v gs =0v,t j =150?c i gss gate-to-source forward leakage 100 na v gs =20v SSF6008 top view (t0-220) id =84a bv=60v r ds ( on ) = 8 m features ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current ? lead free product description the SSF6008 is a new generation of high voltage and low current nCchannel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. SSF6008 is assembled in high reliability and qualified assembly house. applications ? power switching application
www.goodark.com page 2 of 6 rev.2.2 ssf 6 008 60v n-channel mosfet gate-to-source reverse leakage -100 v gs =-20v q g total gate charge 90 q gs gate-to-source charge 18 q gd gate-to-drain("miller") charge 28 nc i d =30a,v gs =10v v dd =30v t d(on) turn-on delay time 18.2 t r rise time 15.6 t d(off) turn-off delay time 70.5 t f fall time 13.8 ns v dd =3 0v i d =2a ,r l =15 r g =2.5 v gs =10v c iss input capacitance 3150 c oss output capacitance 300 c rss reverse transfer capacitance 240 pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current. (body diode) 84 i sm pulsed source current (body diode) 310 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25?c,i s =60a,v gs =0v t rr reverse recovery time 57 ns q rr reverse recovery charge 107 c t j =25?c,i f =75a di/dt=100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) eas test circuit gate charge test circuit notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 30v,id=37a. pulse width300s, duty cycle1.5% ; rg = 25?? starting tj = 25c.
www.goodark.com page 3 of 6 rev.2.2 ssf 6 008 60v n-channel mosfet switch time test circuit switch waveform
www.goodark.com page 4 of 6 rev.2.2 ssf 6 008 60v n-channel mosfet transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature gate charge source-drain diode forward voltage
www.goodark.com page 5 of 6 rev.2.2 ssf 6 008 60v n-channel mosfet safe operation area max drain current vs. junction transient thermal impedance curve
www.goodark.com page 6 of 6 rev.2.2 ssf 6 008 60v n-channel mosfet to-220 mechanical data
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