1 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 hexfet ? power mosfet d s g g d s gate drain source application ? ? optimized for ups/inverter applications ? ? low voltage power tools benefits ? ? fully characterized avalanche voltage and current ? ? lead-free, rohs compliant base part number package type standard pack orderable part number form quantity irfr8314pbf d-pak tape and reel 2000 irfr8314trpbf ? absolute maximum rating symbol parameter max. units v ds drain-to-source voltage 30 v gs gate-to-source voltage 20 i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 179 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 127 ? ? i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 90 ? i dm pulsed drain current ?? 357 ? p d @t c = 25c maximum power dissipation 125 w p d @t c = 100c maximum power dissipation 63 w linear derating factor 0.83 w/c t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.2 c/w ? r ? ja junction-to-ambient (pcb mount) ? ??? 50 r ? ja junction-to-ambient ? ??? 110 v notes ?? through ?? are on page 9 v dss 30 v r ds(on) max (@ v gs = 10v) 2.2 ? m ??? (@ v gs = 4.5v) 3.1 qg (typical) 40 nc i d (silicon limited) 179 ? i d (package limited) 90a a irfr8314pbf d-pak d g s
2 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 18 ??? mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? 1.6 2.2 m ?? v gs = 10v, i d = 90a ? ??? 2.6 3.1 ? v gs = 4.5v, i d = 72a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 100a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -7.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds =24 v, v gs = 0v ??? ??? 150 v ds =24v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 189 ??? ??? s v ds = 15v, i d =72a q g total gate charge ??? 36 54 ? q gs1 pre-vth gate-to-source charge ??? 10 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 7.7 ??? nc ? v gs = 4.5v q gd gate-to-drain charge ??? 10 ??? ? i d = 72a q godr gate charge overdrive ??? 8.3 ??? ? q sw switch charge (qgs2 + qgd) ??? 20 ??? ? r g gate resistance ??? 2.0 ??? ?? t d(on) turn-on delay time ??? 19 ??? v dd = 15v t r rise time ??? 98 ??? ns i d = 72a t d(off) turn-off delay time ??? 28 ??? r g = 1.8 ?? t f fall time ??? 30 ??? v gs = 4.5v ? c iss input capacitance ??? 4945 ??? ? v gs = 0v c oss output capacitance ??? 908 ??? pf ? v ds = 15v c rss reverse transfer capacitance ??? 493 ??? ? ? = 1.0mhz avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ? 180 mj e as (tested) single pulse avalanche energy tested value ? 279 ? i a avalanche current 72 ? a diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 179 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 357 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c,i s = 72a,v gs = 0v ? t rr reverse recovery time ??? 31 47 ns t j = 25c i f = 72a ,v dd =15v q rr reverse recovery charge ??? 87 130 nc di/dt = 360a/s ??
3 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v ? 60s pulse width tj = 25c 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.8v ? 60s pulse width tj = 175c vgs top 10v 9.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 90a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 72a
4 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a id = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w
5 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf fig 12. typical on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 16a 33a bottom 72a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 90a t j = 25c t j = 125c
6 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 15a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 16a. switching time test circuit fig 17a. gate charge test circuit t p v (br)dss i as fig 15b. unclamped inductive waveforms fig 16b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 17b. gate charge waveform
7 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline dimensio ns are shown in millimeters (inches) d-pak (to-252aa) part marking information international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 3412 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional)
8 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information di mensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
9 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ? irfr8314pbf ir world headquarters: 101n sepulveda blvd, el segundo, california 90245, usa to ? contact ? interna onal ? rec er, ? please ? visit ? h p://www.irf.com/whoto \ call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d-pak msl1 rohs compliant yes ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. notes: ?? calculated continuous current based on maximum allowabl e junction temperature. bond wire current limit is 90a by source bonding technology. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width lim ited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.07mh, r g = 50 ? , i as = 72a, v gs =10v. ? ?? pulse width ? 400s; duty cycle ? 2%. ? ? r ? is measured at t j approximately 90c. ?? this value determined from sample failure population, starting t j =25c, l=0.07mh, r g = 50 ? , i as = 72a, v gs =10v. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.please refer to application note to an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf revision history date comments 07/01/2014 the device is active without bulk part which is removed from table on page 1
|
