1 elm34414aa - n 5 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient steady-state r ja 5 0 c /w parameter symbol limit unit note drain - s ource voltage vds 3 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 15 a t a = 9 0 c 12 pulsed d rain current idm 5 0 a 3 power dissipation t c = 25 c pd 2.5 w t c = 9 0 c 2.0 j unction and storage temperature range tj , tstg - 55 to 150 c elm34414aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 3 0v ? id = 1 5 a ? rds (on) < 8 m (vgs = 10 v) ? rds (on) < 1 2 m (vgs = 4 .5v) single n-channel mosfet pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain s g d 4 3 2 1 5 6 7 8 t a = 25 c . u nless otherwise noted.
2 elm34414aa - n 5 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 24 v, vgs = 0v 1 a vds = 2 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.0 1.5 3.0 v static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 1 5 a 6.8 8.0 m 1 vgs = 4 .5v, id = 12 a 8.8 12.0 m forward transconductance gfs vds =1 5v, id = 1 5 a 60 s 1 diode forward voltage vsd i f = 3 a, vgs = 0v 1.1 v 1 max. body - d iode continuous c urrent is 3 a pulsed body - d iode c urrent ism 6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 15 v, f = 1mh z 1900 pf output capacitance c oss 530 pf reverse transfer capacitance c r ss 120 pf switching parameters total gate charge q g vgs = 10 v, vds = 15 v, id = 1 5 a 18.0 28.0 nc 2 gate - s ource charge q gs 4.2 nc 2 gate - d rain charge q gd 5.4 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 15 v , id = 1 a r l = 1 5 , rgen = 6 10 ns 2 turn - o n rise t ime t r 24 ns 2 turn - o ff delay time t d ( of f ) 48 ns 2 turn - o ff fall t ime t f 12 ns 2 body diode reverse recovery time t rr i f = 3 a, d if /dt=100a/ s 50 80 ns note : 1. pulsed width 300 sec and duty cycle 2%; 2. independent of operating temperature ; 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. single n-channel mosfet t a = 25 c . u nless otherwise noted.
3 elm34414aa - n 5 - typical electrical and thermal characteristics ? ? ???????????? 3v 0 1 2 3 4 5 0 v ds - drain-to-source voltage(v) output characteristics 5 10 15 20 25 30 35 40 45 50 i d - drain current(a) v gs =10thru 4v 25c -55c t c =125c 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 35 40 transfer characteristics v gs - gate-to-source voltage(v) i d - drain current(a) 2.5 3.0 3.5 4.0 v gs =4.5v v gs =10v i d - drain current(a) r ds(on) - on-resistance( ? ) on-resistance vs. drain current 0 10 20 30 40 50 0.000 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 0 500 1000 1500 2000 2500 crss coss ciss v ds - drain-to-source voltage(v) c- capacitance(pf) capacitance f = 1 mhz v gs =0v 0 4 8 12 16 20 24 0 2 4 6 8 10 q g - total gate charge(nc) gate charge v gs - gate-to-source voltage(v) i d =15a v ds =10v -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 1.75 2.00 v gs =10v t j - junction tem p erature ( c ) r ds(on) - on-resistance( ? ) (normalized) on-resistance vs. junction temperature i d =15a ??????? ?????? ???????????? single n-channel mosfet
4 elm34414aa - n 5 - ? ???????????? 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 10 60 t j =150c t j =25c v sd - source-to-drain voltage(v) i s - source current(a) source-drain diode forward voltage on-resistance vs.gate-to-source voltage v gs - gate-to-source voltage(v) r ds(on) - on-resistance( ? ) 0 2 4 6 8 10 0.000 0.008 0.016 0.024 0.032 0.040 i d =15a t j - temperature( c) i d = 250 ? a v gs(th) variance(v) threshold voltage -50 -25 0 25 50 75 100 125 150 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0 10 20 30 40 50 t a =25c 10 -2 10 -1 1 power(w) time(sec) 10 single pulse power 0.1 1 10 100 0.01 0.1 1 100 10 100ms 1s 10s limited by r ds(on) i d - drain current(a) v ds - drain-to-source voltage(v) safe operating area, junction-to ambient 100 ? s,10 ? s 1ms 10ms t a =25c single pulse dc,100s ?????? ???????????? single n-channel mosfet
5 elm34414aa - n 5 - ? ? 10 -4 10 -3 10 -2 10 -1 1 10 100 600 t 2 t 1 p dm notes: 0.01 0.1 1 2 0.02 0.05 0.1 0.2 duty cycle = 0.5 single pulse normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 1. duty cycle, d ? = 2. r ? ? ja(t) = 50 ? cw 3. t jm - ta = ? p dm ? * ? r ? ? ja(t) 4. surface mounted t1 t2 ???????????? ?????? ???????????? single n-channel mosfet
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