2005. 3. 7 1/1 semiconductor technical data E50A2CPS, e50a2cpr stack silicon diffused diode revision no : 0 alternator diode for automotive application. features h average forward current : i o =50a. h reverse voltage : 200v(min.) polarity E50A2CPS (+ type) e50a2cpr (- type) maximum rating (ta=25 ? ) dim millimeters a b d e 1.55 h-pf 11.7+0.1/-0 3.85+0/-0.2 1.45 0.1 d l1 b g l2 e f1 f2 a 0.5 3.1 8.4 max g f2 l1 0.32 millimeters dim f1 l2 dim millimeters type r s polarity 21.5+0/-1.5 17.5+0/-1.5 + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit forward voltage v f i fm =100a - - 1.05 v reverse voltage v r i r =5ma 200 - - v reverse current i r v r =200v - - 50 a transient thermal resistance v f i fm =100a, i m =100ma, pw=100ms - - 130 mv reverse recovery time t rr i f =100ma, i rp =100ma - - 15 s reverse leakage current underhigh temperature hi r ta=150 ? , v r =200v - - 2.5 ma temperature resistance r th junction to base - - 0.8 ? /w junction to fin - - 1.0 characteristic symbol rating unit average forward current i f(av) 50 a peak 1 cycle surge current i fsm 500 (60hz) a repetitive peak reverse voltage v rrm 200 v junction temperature t j -40 q 200 ? storage temperature range t stg -40 q 200 ? downloaded from: http:///
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