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AUIRFR6215 hexfet ? power mosfet pd-96302a specifically designed for automotive applications ofhexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. description features p-channel low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * s d g d-pak AUIRFR6215 s d g d automotive grade v (br)dss -150v r ds(on) max. 0.295 i d -13a www.irf.com 1 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ 01/28/11 gds gate drain source absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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"! parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance parameter typ. max. units r jc junction-to-case CCC 1.4 r ja junction-to-ambient(pcb mount) CCC 50 c/w r ja junction-to-ambient CCC 110 max. -13 -9.0 -44 110 5.0 -55 to + 175 20 0.71 300 310 a c -6.6 11 downloaded from: http:///
AUIRFR6215 2 www.irf.com s d g s d g notes through are on page 10 static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -150 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.20 CCC v/c CCC CCC 0.295 CCC CCC 0.58 v gs(th) gate threshold voltage -2.0 CCC -4.0 v gfs forward transconductance 3.6 CCC CCC s i dss drain-to-source leakage current CCC CCC -25 CCC CCC -250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC CCC 66 q gs gate-to-source charge CCC CCC 8.1 q gd gate-to-drain ("miller") charge CCC CCC 35 t d(on) turn-on delay time CCC 14 CCC t r rise time CCC 36 CCC t d(off) turn-off delay time CCC 53 CCC t f fall time CCC 37 CCC between lead, nh 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 860 CCC c oss output capacitance CCC 220 CCC c rss reverse transfer capacitance CCC 130 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage CCC CCC -1.6 v t rr reverse recovery time CCC 160 240 ns t j = 25c, i f =-6.6a q rr reverse recovery charge CCC 1.2 1.7 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ? v gs = -10v, i d = -6.6a t j = 150c static drain-to-source on-resistance r ds(on) pf a CCC CCC CCC CCC -13 -44 v gs = -10v, see fig 6 and 13 v dd = -75v ana nc ns conditions t j = 25c, i s =-6.6a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -6.6a v ds = v gs , i d = -250a v ds = -150v, v gs = 0v v ds = -120v, v gs = 0v, t j = 150c mosfet symbol showing the v ds =-120v conditions r d = 12 ?, see fig. 10 v gs = 0v v ds = -25v ? = 1.0mhz, see fig.5 i d = -6.6a r g = 6.8 ? v ds = -50v, i d = -6.6a i d = -6.6a v gs = 20v v gs = -20v l d l s internal source inductance internal drain inductance CCC 4.5 CCC CCC 7.5 CCC downloaded from: http:///
AUIRFR6215 www.irf.com 3

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qualification information ? d pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 aec-q101-002 human body model class h3a aec-q101-001 downloaded from: http:///
AUIRFR6215 4 www.irf.com fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1 10 100 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 4567891 0 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c j v = -50v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -11a d downloaded from: http:///
AUIRFR6215 www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 2 04 06 08 0 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d dsds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse cj 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss downloaded from: http:///
AUIRFR6215 6 www.irf.com fig 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit fig 10b. switching time waveforms * +,*
1 0.1 % * * -. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c downloaded from: http:///
AUIRFR6215 www.irf.com 7 fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -2.7a -4.7a bottom -6.6a d $
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%() q g q gs q gd v g charge !"* d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
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t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v downloaded from: http:///
AUIRFR6215 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer , * reverse polarity of d.u.t for p-channel downloaded from: http:///
AUIRFR6215 www.irf.com 9

d-pak part marking information -

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AUIRFR6215 10 www.irf.com

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch notes: repetitive rating; pulse width limited bymax. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 14mh r g = 25 ? , i as = -6.6a. (see fig.12) i sd -6.6a, di/dt -620a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2% this is applied for i-pak, l s of d-pak is measured between lead and center of die contact uses irf6215 data and test conditions when mounted on 1" square pcb (fr-4 or g-10 material ) forrecommended footprint and soldering techniques refer to application note #an-994 r is measured at tj approximately 90c. downloaded from: http:///
AUIRFR6215 www.irf.com 11 ordering information base p art packa g e t yp e standard pac k com p lete part number form quantit y AUIRFR6215 dpak tube 75 AUIRFR6215 AUIRFR6215 tape and reel 2000 AUIRFR6215tr AUIRFR6215 tape and reel left 3000 AUIRFR6215trl AUIRFR6215 tape and reel right 3000 AUIRFR6215trr downloaded from: http:///
AUIRFR6215 12 www.irf.com
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir)reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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