microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2001 rev. 1.0 www. microsemi . com MXP4003 ? 10 gbps ingaas/inp pin photo diode o pto -e lectronic p roducts p roduction d ata s heet description microsemi?s ingaas/inp pin photo diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. the device series offers superior noise performance and sensitivity due to their planar construction and passivation. the mxp4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations. this device is ideal for manu- facturers of optical receivers, transponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. microsemi will assemble die on submounts and custom confi- gurations. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features high responsivity low dark current extremely low capacitance high bandwidth custom sub-mounts applications 1310nm catv optical applications 1550nm dwdm optical applications sonet/sdh, atm 10 gigabit ethernet, fibre channel benefits planar passivation low contact resistance product highlight 355.6um 355.6um ? 40um 2um bond pad ? 40um 2um active area 355.6um 150um MXP4003 microsemi 20um 25um 25um 25um 45 anode m m x x p p 4 4 0 0 0 0 3 3 typical spectral responsivity 0.0 0.2 0.4 0.6 0.8 1.0 1.2 800 900 1000 1100 1200 1300 1400 1500 1600 1700 wavelength (nm) responsivity (amps / watt)
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2001 rev. 1.0 www. microsemi . com MXP4003 ? 10 gbps ingaas/inp pin photo diode o pto -e lectronic p roducts p roduction d ata s heet characteristics test conditions (unle ss otherwise noted): t a = 25 o c, v r = 5 volts MXP4003 parameter symbol test conditions min typ max units ` maximum ratings operating tj temperature range t j -20 +85 o c storage temperature range t stg -55 +125 o c maximum soldering temperature 10 seconds maximum at temperature +260 o c ` electrical characteristics active area diameter 40 m responsivity (1) r v r = 5v, = 1550nm vr = 5v, = 1310nm 0.95 0.80 1.0 0.86 a/w linearity (2) l vr = 5v < 10mw input power 5 % dark current i d v r = 5v 0.3 1.0 na breakdown voltage bv r i r = 10a 20 25 volts capacitance (3) c v r = 5v 0.27 0.33 pf bandwidth bw v r = 5v, = 1550nm @3db 7.5 ghz note: 1. antireflective coating is ? wavelength at 1430nm covering 1310 and 1550nm applications 2. maximum distortion from nominal @ 10mw input power 3. see cv curve e e l l e e c c t t r r i i c c a a l l s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2001 rev. 1.0 www. microsemi . com MXP4003 ? 10 gbps ingaas/inp pin photo diode o pto -e lectronic p roducts p roduction d ata s heet precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling ingaas pin photo diode. MXP4003 cv curve 0 0.2 0.4 0.6 0.8 1 1.2 012345678910 v c (pf) c@85oc(pf) c@25oc(pf) c c h h a a r r t t s s
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