general features v ds = 150v,i d = 2a r ds(on) < 300m ? @ v gs =10v (typ:260m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage and current excellent package for good heat dissipation application power switching application hard switched and high frequency circuits d g s schematic diagram sot-223-3l view package marking and ordering information device marking device device package reel size tape width quantity sot-223-3l ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v drain current-continuous i d 2 a drain current-pulsed (note 1) i dm 6 a maximum power dissipation p d 2 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 62.5 /w 150v(d-s) n-channel enhancement mode power mos fet MSN1502U MSN1502U MSN1502U lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6 marking and pin assignment
gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1.5 2.0 2.5 v drain-source on-state resistance r ds(on) v gs =10v, i d =1.5a - 260 300 m ? forward transconductance g fs v ds =15v,i d =1.5a - 3 - s dynamic characteristics (note4) input capacitance c lss - 235 - pf output capacitance c oss - 36 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 20 - pf switching characteristics (note 4) turn-on delay time t d(on) - 8 - ns turn-on rise time t r - 10 - ns turn-off delay time t d(off) - 20 - ns turn-off fall time t f v dd =75v,i d =1a,r l =75 ? v gs =10v,r g =6 ? - 15 - ns total gate charge q g - 8 nc gate-source charge q gs - 1.4 - nc gate-drain charge q gd v ds =75v,i d =1.5a, v gs =10v - 2.1 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =2a - - 1.2 v diode forward current (note 2) i s - - 2 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to product electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 150 - - v zero gate voltage drain current i dss v ds =150v,v gs =0v - - 1 a more semiconductor company limited http://www.moresemi.com 2/6 MSN1502U
test circuit 1) e as test circuit 2 gate charge test circuit 3 switch time test circuit more semiconductor company limited http://www.moresemi.com 3/6 MSN1502U
t ypical electrical and therma l characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current normalized on-resist ance i d - drain current (a) t j -junction temperature( ) figure 4 rdson- junction temperature vgs gate-source v oltage (v) i d - drain current (a) qg gate ch arge (nc) figure 5 gate charge i s - reverse drain current (a) rdson on-resistance ( ? ) vsd source-drain voltage (v) figure 6 source- drain diode forward more semiconductor company limited http://www.moresemi.com 4/6 MSN1502U
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area c cap acitance (pf) normalized bvdss t j -junction temperature( ) figure 9 bv dss vs junction temperature i d - drain current (a) vth (v) variance t j -junction temperature( ) figure 10 v gs(th) vs junction temperature r(t),normalized effective transient thermal impedance square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance more semiconductor company limited http://www.moresemi.com 5/6 MSN1502U
sot -223-3l package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. more semiconductor company limited http://www.moresemi.com 6/6 MSN1502U
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