GSD32015 rectifier diode voltage up to 1600 v average current 150 a surge current 2.85 ka cathode on base (standard) - anode on base (reverse) blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 1600 v v rsm non-repetitive peak reverse voltage 1700 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 10 ma forward characteristics i f(av) average forward current sine wave,180 conduction, tc = 120c 150 a i f(rms) r.m.s. forward current sine wave,180 conduction, tc = 120c 236 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 2.85 ka i2t i2 t for fusing coordination 34.0 ka2s v f(to) threshold voltage t j = t jmax 0.9 v r f forward slope resistance t j = t jmax 0.65 m w v fm peak forward voltage, max forward current i f = 300 a, tj = tjmax 1.10 v switching characteristics q rr rverse recovery charge t j = t jmax , i f = a, tp = s, di/dt = a/s c i rr reverse recovery current v r = v, dv/dt = v/s a t rr reverse recovery time s v fp forward recovery voltage t j = t jmax , di/dt = a/s v thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0.35 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0.08 c/w t jmax max operating junction temperature 180 c t stg storage temperature -65 / 180 c m mounting torque 10 nm mass 100 g document GSD32015t001 value g f h a b c d e m ? l n symbol inches mm a b c d e f g h l 4.07 10.33 36.22 1.426 .64 .745 18.92 16.25 .233 .437 11.09 5.66 1.06 1.166 29.61 26.92 .85 21.59 3/8-24 unf m 1/4-28 unf n gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
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