features low cost diffused junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data cas e:jedec do--15,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phas e,half wave,60 hz,res is tive or inductive load. for capacitive load,derate by 20%. erc01 -06 erc01 -10 units maximum recurrent peak reverse voltage v rrm 600 1000 v max imum rms v olt age v rms 420 700 v max imum dc b lo c king v oltage v dc 600 1000 v maximum average forw ard rectif ied current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous f orw ard voltage @ 1.5 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja <d operating junction temperature range t j storage temperature range t stg a 5.0 easily cleaned with freon,alcohol,isopropanol i f(av) 1.5 the plastic material carries u/l recognition 94v-0 a 130.0 i fsm a 50.0 note: 1. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55 ---- + 150 - 55---- + 150 i r 20 1.0 40 2. thermal resistance f rom junction to ambient. p l a s t i c s i l i con r e c t i f i e r s 400 280 400 erc01 -04 erc01-02---erc01-10 d o - 1 5 200 140 200 erc01 -02 voltage range: 200 --- 1000 v current: 1.5 a dimensions in millimeters diode semiconductor korea www.diode.kr
12 0 t j =125 8.3ms single half sine-wave 2 4 108 100 40 60 80 0 20 40 60 80 100 120 140 160 0.6 t j =25 pulse width=300us 0.04 0.01 0.1 0.4 2 1.0 4 100 10 0.8 1 . 0 1 . 2 1 . 4 2.0 1.6 1.8 .2 tj=25 f=1mhz 1 .1 2 4 .4 1.0 2 40 10 20 60 100 1 4 00 75 25 0 50 single phase half wave 60h z resistive or inductive load 100 125 175 150 0 . 25 0 . 5 1 0 . 75 1 . 25 1 . 5 amperes junction capacitance,pf amperes peak forward surge current amperes fig. 3 --current derati ng curve f i g .4 -- peak forward surge current nu m b e r o f c y c l e s a t 60 h z erc01-02---erc01-10 i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s r e v e r se v o l t a g e , v o l t s ambient temperature, fi g. 1 -- forward characteristi c f i g . 2 - - junction ch a rac t e r i s t i cs peak forward surge current instantaneous forward current www.diode.kr diode semiconductor korea
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